Doped Channel MBE GaAs Field Effect Transistor (MEDFET) with Laser Processed Ohmic Contacts

1988 ◽  
Vol 144 ◽  
Author(s):  
G. Halkias ◽  
Z. Hatzopoulos ◽  
A. Christou
Keyword(s):  
Field Effect ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
X Band ◽  
Potential Benefits ◽  
Effect Transistor ◽  
Metal Doped ◽  
Potential Stability ◽  
Grown Structure

ABSTRACTA doped channel heterojunction Field Effect Transistor (Metal-Doped Channel Field Effect Transistor, MEDFET) was fabricated using a molecular beam epitaxially (MBE) grown structure and excimer laser processed TiW-silicide ohmic contacts and TIW-Si gate metallization. The device was characterized at X-band frequencies in order to investigate the potential benefits of the semiconductor MBE structure and the potential stability of the laser processed TiW/Si electrode metallizations.

Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth ◽  
Effect Transistor

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

1982 ◽  
Vol 41 (7) ◽  
pp. 633-635 ◽  
Author(s):  
M. Feng ◽  
V. K. Eu ◽  
I. J. D’Haenens ◽  
M. Braunstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Effect Transistor
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