Thin-Film Encapsulants for Thermal Processing of GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
J.M. Molarius ◽  
E. Kolawa ◽  
K. Morishitaal ◽  
E.T-S. Pan ◽  
J.L. Tandon ◽  
...  

ABSTRACTDuring heat treatment of GaAs there is a tendency for arsenic to evaporate. This process can have deleterious consequences and must be controlled during the annealing of GaAs by using encapsulants. In this work we use a Cr collector to catch the evaporated atoms. This collector is placed on top of GaAs or GaAs/cap during annealing. We survey the effectiveness of W, Hf and HfN as capping materials for thermal annealings of 10 min. for 450–700 C and compare them to Si3N4. The backscattering spectrometry results show that Si3N4 and W were excellent caps up to 700 C for 10 min. No evaporation was defected through HfN either, but hillock formation was detected on the surface. Hf failed because of its chemical reaction with GaAs at 650 C, 10 min.

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).


2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.


2008 ◽  
Author(s):  
Fangming Cui ◽  
Lei Wang ◽  
Xiongfei Chen ◽  
Xia Sheng ◽  
Deren Yang ◽  
...  

Author(s):  
С.Н. Гарибова ◽  
А.И. Исаев ◽  
С.И. Мехтиева ◽  
С.У. Атаева ◽  
Р.И. Алекперов

Specifics of "amorphous state - crystal" phase transitions in dependence on the samples obtaining method and thermal processing, as well as changes in the structure and close range order in the arrangement of the atoms of Ge20Sb20.5Te51 chalcogenide semiconductors have been studied by the x-ray diffraction and Raman spectroscopy. It has been shown that Ge20Sb20.5Te51 films obtained by thermal evaporation on an unheated substrate are amorphous; after heat treatment at 220 and 400 °C, transform into a crystalline phase with a cubic and hexagonal structure. The chemical bonds and the main structural elements that form the matrix of the investigated objects, as well as the changes that occur in them during heat treatment, have been determined.


2018 ◽  
Vol 1 (1) ◽  
Author(s):  
Qiang Li ◽  
Yutao Wang

In the thermal processing of metal materials, the performance of thematerial is more stable, and the heat-treated materials are processed into parts to make the performance more excellent and more in line with the performance requirements of mechanical parts. However, in thermal processing, metal materials are prone to problems, such as deformation, deformation of the appearance of metal materials, and fatal effects on the processing of mechanical parts. Therefore, this paper focuses on solving the causes of deformation in the thermal processing of metal materials, as well as solutions to improve the problems in the processing of metal materials.


2017 ◽  
Vol 82 (9) ◽  
pp. 1063-1073 ◽  
Author(s):  
Yerzhan Imanbayev ◽  
Yerdos Ongarbayev ◽  
Yerbol Tileuberdi ◽  
Evgeniy Krivtsov ◽  
Anatoly Golovko ◽  
...  

Transformations of high-molecular-weight compounds of oil sand natural bitumen under the heat treatment were studied in this work. For that purpose the natural bitumen isolated from oil sand taken from the Beke field (Kazakhstan) was used as a substrate. Thermal processing of natural bitumen leads to a general change in the chemical composition of components and to an increase in the output of certain fractions. The contents of oil, tar and asphaltenes were determined and the elemental composition of tar-asphaltene compounds was evaluated. Molecular structures of the tar and asphaltene components of natural bitumen before and after cracking have been defined from the data of elemental analysis, NMR spectroscopy and molecular weight. The high molecular compounds were presented as giant molecules containing small aromatic islands some of which were linked by aliphatic chains, that was proved by infrared spectroscopy.


2015 ◽  
Vol 48 (7) ◽  
pp. 2107-2117 ◽  
Author(s):  
Harikrishna Erothu ◽  
Joanna Kolomanska ◽  
Priscilla Johnston ◽  
Stefan Schumann ◽  
Dargie Deribew ◽  
...  

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