Some Applications of Ion Beams in III-V Compound Semiconductor Device Fabrication

1988 ◽  
Vol 144 ◽  
Author(s):  
J. P. Donnelly ◽  
K. K. Anderson ◽  
J. D. Woodhouse ◽  
W. D. Goodhue ◽  
D. Yap ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Compound Semiconductor ◽  
Ion Beams ◽  
Device Fabrication ◽  
Multiple Quantum ◽  
Quantum Well Structures

ABSTRACTIon-beam-assisted etching of GaAs/AlGaAs and InP/GaInAsP, ion-beam disordering of GaAs/AlGaAs multiple-quantum-well structures, and ion implantation in InP are discussed.

Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing

2006 ◽  
Vol 21 (3) ◽  
pp. L25-L28 ◽  
Author(s):  
V A Coleman ◽  
M Buda ◽  
H H Tan ◽  
C Jagadish ◽  
M R Phillips ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

1992 ◽  
Author(s):  
Howard E. Jackson ◽  
Ahn G. Choo ◽  
Bernard L. Weiss ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Ion Beam Implantation

Ion Beam Assisted Quantum well Intermixing

1995 ◽  
Vol 396 ◽  
Author(s):  
R. D. Goldberg ◽  
I. V. Mitchell ◽  
S. Charbonneau ◽  
P. Poole ◽  
E. S. Koteles ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
High Energy ◽  
Multiple Quantum ◽  
Active Components ◽  
Quantum Well Structures ◽  
Ion Species ◽  
Made In

AbstractSignificant progress has been made in the past year in the use of high energy (MeV) ion irradiation to tune the bandgap and therefore emission wavelengths of single and multiple quantum well structures. These shifts are attributable to compositional mixing across the well and barrier layer interfaces, a process that is driven by the vacancy flux, released during the anneal stage, from radiation defects. We present data from a series of measurements in both GaAs- and InP-based QW structures to demonstrate the importance of the implantation parameters chosen (ion species, energy, flux, fluence and implant temperature). The dramatic difference in the response of these two systems with regard to the implant depth is believed to be associated with the very different diffusivities of the Gp III site vacancies. Prospects for implementing the irradiation approach as a spatially selective, planar process in integrated optoelectronic circuitry look very attractive and are illustrated for both passive and active components by reference to recent results from tuned wavelength lasers.

Depth Profiling of Ion Beam Induced Damage in Semiconductor Heterostructures

1988 ◽  
Vol 128 ◽  
Author(s):  
R. Germann ◽  
A. Forchel ◽  
G. Hörcher ◽  
G. Weimann
Keyword(s):  
Quantum Well ◽  
Cross Sections ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Depth Profiling ◽  
Multiple Quantum ◽  
Etching Technique ◽  
Quantum Well Structures ◽  
Inclination Angles ◽  
Argon Ions

ABSTRACTWe have produced beveled cross-sections of GaAs/GaAlAs multiple quantum well structures with inclination angles of 0.55 minutes of arc with a special ion beam etching technique. The extension of the damage which is induced during the dry etching process can be evaluated directly by a comparison of spatially resolved secondary ion mass spectroscopy and photoluminescence measurements. We observe a thickness of the damaged surface layer between 36 nm for 250 eV Argon ions and 160 nm for 1000 eV Argon ions in a GaAs/GaAlAs multiple quantum well structure.

Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing

1992 ◽  
Vol 281 ◽  
Author(s):  
Mukesh Kumar ◽  
Gregory N. De Brabander ◽  
Peter Chen ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Propagation Loss ◽  
Optical Channel ◽  
Multiple Quantum ◽  
Mixing Depth ◽  
Quantum Well Structures ◽  
Mode Field

ABSTRACTOptical channel waveguiding in AlGaAs multiple quantum well structures formed by compositional mixing implemented by focused ion beam (FIB) implantation is demonstrated. To achieve selective mixing, Si is FIB implanted with a dose of 5×1014 cm−2 followed by RTA at 950°C for 10 s. Raman microprobe spectra are used to characterize the lateral variation of mixing. Propagation loss in a channel waveguide is measured. Measurement of the waveguide mode field distribution allows for the determination of changes in refractive index due to mixing and an approximate mixing depth.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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