New Organotellurium Precursors for the Pyrolytic and Photolytic Deposition of Hg1-xCdxTe

1988 ◽  
Vol 131 ◽  
Author(s):  
Robert W. Gedridge ◽  
Kelvin T. Higa ◽  
Robin A. Nissan
Keyword(s):  
High Performance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Organometallic Compounds ◽  
Organic Chemical ◽  
Rate Determining Step ◽  
Potential Applicability ◽  
Metal Organic ◽  
Organometallic Precursors ◽  
Organic Chemical Vapor Deposition

ABSTRACTOrganometallic precursors with low decomposition temperatures are essential in the fabrication of high performance mercury cadmium telluride (Hg1-xCdxTe) infrared detectors by pyrolytic and photolytic metal-organic chemical vapor deposition (MOCVD). Film growth temperature is governed by the relative stability and/or reactivity of the organotellurium precursor, which is determined by the strength of the Te-C bonds. Since the rate-determining step in the pyrolysis of organometallic compounds involves bond breaking and free radical formation, we have concentrated on the synthesis of a variety of organotellurium precursors with substituents that possess low activation energies for the formation of hydrocarbon free radicals. The synthesis, characterization, and properties of methylallyltelluride, ethylallyltelluride, isopropylallyltelluride, tertiarybutylallyl-telluride, methylbenzyltelluride, and methylpentadienyltelluride are reported. These unsymmetrical tellurides were characterized by 1H, 13 C, and 125Te NMR spectroscopy. The potential applicability of these organotellurium precursors to lower film-growth temperatures in MOCVD is discussed.

Broadband Ultraviolet Photodetector Based on Graphene/β-Ga2O3/GaN Heterojunction

2020 ◽  
Vol 1014 ◽  
pp. 131-136
Author(s):  
Chun Hong Zeng ◽  
Yong Jian Ma ◽  
Bao Shun Zhang ◽  
Ya Meng Xu ◽  
Mei Kong
Keyword(s):  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Transparent Electrode ◽  
Organic Chemical ◽  
Ultraviolet Photodetector ◽  
Micro Fabrication ◽  
Internal Gain ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Broadband ultraviolet (BUV) photodetectors are widely used in military and civil fields. A high performance BUV photodetector based on graphene/β-Ga2O3/GaN heterojunction is proposed and realized by semiconductor micro-fabrication techniques in this paper. The β-Ga2O3 and GaN films are grown by metal organic chemical vapor deposition (MOCVD), and the graphene is also used as a transparent electrode. The device exhibits a broad response band from 230 nm to 368 nm with responsivity exceeding 0.4A/W at -5 V bias voltage and a peak responsivity of 0.53 A/W at 256 nm. These performances can be attributed to the internal gain mechanism of graphene/β-Ga2O3/GaN heterojunction and the optical properties of graphene. Our work provides an efficient method to realize a high-performance BUV photodetector for photoelectric applications.

Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl2Ba2CaCu2O8 films by metal-organic chemical vapor deposition

1997 ◽  
Vol 12 (5) ◽  
pp. 1214-1236 ◽  
Author(s):  
Bruce J. Hinds ◽  
Richard J. McNeely ◽  
Daniel B. Studebaker ◽  
Tobin J. Marks ◽  
Timothy P. Hogan ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Pressure ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Epitaxial Tl2Ba2CaCu2O8 thin films with excellent electrical transport characteristics are grown in a two-step process involving metal-organic chemical vapor deposition (MOCVD) of a BaCaCuO(F) thin film followed by a postanneal in the presence of Tl2O vapor. Vapor pressure characteristics of the recently developed liquid metal-organic precursors Ba(hfa)2 • mep (hfa = hexafluoroacetylacetonate, mep = methylethylpentaglyme), Ca(hfa)2 • tet (tet = tetraglyme), and the solid precursor Cu(dpm)2 (dpm = dipivaloylmethanate) are characterized by low pressure thermogravimetric analysis. Under typical film growth conditions, transport is shown to be diffusion limited. The transport rate of Ba(hfa)2 • mep is demonstrated to be stable for over 85 h at typical MOCVD temperatures (120 °C). In contrast, the vapor pressure stability of the commonly used Ba precursor, Ba(dpm)2, deteriorates rapidly at typical growth temperatures, and the decrease in vapor pressure is approximately exponential with a half-life of ∼9.4 h. These precursors are employed in a low pressure (5 Torr) horizontal, hot-wall, film growth reactor for growth of BaCaCuO(F) thin films on (110) LaAlO3 substrates. From the dependence of film deposition rate on substrate temperature and precursor partial pressure, the kinetics of deposition are shown to be mass-transport limited over the temperature range 350–650 °C at a 20 nm/min deposition rate. A ligand exchange process which yields volatile Cu(hfa)2 and Cu(hfa) (dpm) is also observed under film growth conditions. The MOCVD-derived BaCaCuO(F) films are postannealed in the presence of bulk Tl2Ba2CaCu2O8 at temperatures of 720–890 °C in flowing atmospheres ranging from 0–100% O2. The resulting Tl2Ba2CaCu2O8 films are shown to be epitaxial by x-ray diffraction and transmission electron microscopic (TEM) analysis with the c-axis normal to the substrate surface, with in-plane alignment, and with abrupt film-substrate interfaces. The best films exhibit a Tc = 105 K, transport-measured Jc= 1.2 × 105 A/cm2 at 77 K, and surface resistances as low as 0.4 mΩ (40 K, 10 GHz).

A Fetish for Gallium Arsenide

1995 ◽  
Vol 410 ◽  
Author(s):  
Andrew R. Barron
Keyword(s):  
Gallium Arsenide ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Organometallic Compounds ◽  
Organic Chemical ◽  
New Class ◽  
Metal Organic ◽  
Effect Transistor ◽  
Organic Chemical Vapor Deposition ◽  
Insulating Properties

ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices. The gallium sulfido compound [(tBu)GaS]4, readily prepared from tri-tert-butyl gallium, may be used as a precursor for the growth of GaS thin films by metal organic chemical vapor deposition (MOCVD). Photoluminescence and electronic measurements indicate that this material provides a passivation coating for GaAs. Furthermore, the insulating properties of cubic-GaS make it suitable as a the insulating gate layer in a new class of GaAs transistor: a field effect transistor with a sulfide heterojunction (FETISH).

Epitaxial CoSi2 formation using an oxynitride buffer layer

2009 ◽  
Vol 24 (8) ◽  
pp. 2705-2710 ◽  
Author(s):  
Jaesang Lee ◽  
Keunwoo Lee ◽  
Dongock Kim ◽  
Taeyong Park ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Growth Process ◽  
Film Growth ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We investigated the epitaxial growth of CoSi2 (100) on an Si (100) substrate using a modified oxide mediated epitaxy (OME) method to overcome the disadvantages of the OME method. These disadvantages are sensitivity of Co films to contamination by oxygen and the need for reiterating the film growth process to obtain thicker films. To solve these problems, nitrogen atoms were incorporated into chemically grown oxide (SiOx) by NH3 plasma treatment prior to the deposition of a Co film on the oxynitride buffer layer using the metal organic chemical vapor deposition (MOCVD) method. Subsequently, ex situ rapid thermal annealing was performed to grow Co-silicide at a temperature between 400 °C and 700 °C for 1 min. The results show that the diffusion of Co was effectively controlled by the oxynitride buffer layer without the formation of additional SiOx in between Co and Si. Our findings indicate that by using an oxynitride buffer layer, CoSi2 films can be grown epitaxially despite the fact that the initial Co film was exposed to oxygen.

Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

2017 ◽  
Vol 32 (9) ◽  
pp. 1611-1617
Author(s):  
Yu Cao ◽  
Ray Li ◽  
Adam J. Williams ◽  
Rongming Chu ◽  
Andrea L. Corrion ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Gallium Oxide ◽  
Film Growth ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Oxide Substrate ◽  
Image Position ◽  
Organic Chemical Vapor Deposition ◽  
Gan Film

Abstract

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