Electronic Structure of Adsorbed Trimethylaluminum on Clean Si(100) Surfaces
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ABSTRACTThe electronic structure of dimerized trimethylaluminum (TMA), Al2(CH3)6. adsorbed on Si(100) surfaces has been investigated using molecular orbital (MO) calculations based on a cluster description of TMA/Si(100). The calculated results suggest that the interactions between TMA and the Si(100) surface are described by overlap of the TMA electron-deficient bond and Si surface dangling-bond orbitals. The electron-deficient bond orbital is the highest occupied MO of TMA and acts as an electron acceptor for charge transfer from a surface Si atom to TMA consistent with observed core-level and valence photoelectron spectra.
1977 ◽
Vol 42
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pp. 85-101
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1987 ◽
Vol 109
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pp. 7025-7031
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1974 ◽
Vol 52
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pp. 3373-3377
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1984 ◽
Vol 106
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pp. 5186-5188
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