Cw Laser Annealing of Ion Implanted Oxidized Silicon Layers on Sapphire

1982 ◽  
Vol 13 ◽  
Author(s):  
G. Alestig ◽  
G. HolmÉn ◽  
S. Peterström
Keyword(s):  
Hall Effect ◽  
Laser Irradiation ◽  
Oxide Layer ◽  
Laser Power ◽  
Laser Annealing ◽  
Oxide Thickness ◽  
Sheet Resistivity ◽  
High Activation ◽  
Cw Laser ◽  
Hall Effect Measurements

ABSTRACTCW laser annealing has been performed on silicon on sapphire (SOS) implanted with boron or phosphorus ions to a dose of 1015 ions/cm2 . The laser irradiation was done both with and without an oxide layer on top of the silicon and from both the silicon and the sapphire side. Sheet resistivity and Hall effect measurements were used for the analysis of the samples. Good annealing and high activation of the dopants were obtained for both oxidized and unoxidized SOS. For samples irradiated from the silicon side, the needed laser power changed depending on the thickness of the oxide. For samples irradiated from the sapphire side, the needed laser power was independent of oxide thickness.

Time-Resolved Optical Reflectivity and Transmission During Laser-Induced Oxidation of Cadmium Films

1983 ◽  
Vol 29 ◽  
Author(s):  
L. Baufay ◽  
M. Wautelet ◽  
A. Pigeolet ◽  
R. Andrew
Keyword(s):  
Melting Point ◽  
Laser Irradiation ◽  
Oxide Layer ◽  
Probe Beam ◽  
Laser Power ◽  
Time Resolved ◽  
Optical Reflectivity ◽  
Glass Substrates ◽  
Cw Laser

ABSTRACTThe laser-induced oxidation of 2000 Å thick cadmium films on glass substrates is studied by measuring the time-resolved reflectivity and transmission of a probe beam. Under CW laser irradiation, the thickness of the oxide layer is shown to increase linearly with time. Also, the velocity, v, of the CdO-Cd interface increases with increasing laser power, with a step when the melting point of Cd is attained. At the highest powers studied in this work, v varies as v = voexp(−a/P), with vo = 6100 Ås−1 and a=4.8 W.

Quenched-In Defects in CW Laser-Annealed Si

1981 ◽  
Vol 4 ◽  
Author(s):  
N.H. Sheng ◽  
J.L. Merz
Keyword(s):  
Laser Power ◽  
Room Temperature ◽  
Laser Annealing ◽  
Minority Carrier ◽  
Deep Hole ◽  
Carrier Injection ◽  
Furnace Annealing ◽  
Shallow Level ◽  
Cw Laser ◽  
Induced Defects

ABSTRACTDLTS has been used to investigate the nature of CW laser-induced defects in ion-implanted Si. A dominant hole trap (∼Ev + 0.45 eV), whose concentration depends on laser power, was observed immediately after sample preparation. This defect is not stable at room temperature; instead, it decays as a function of time, transmuting to a shallow level at Ev + 0.10 eV. The recovery of the Ev + 0.45 eV level can be stimulated by low temperature thermal annealing or by minority carrier injection. By comparing these defects in laser-annealed samples with defects produced by furnace annealing followed by rapid cooling, and with other published results, the laser-induced defects have beenidentified as interstitial Fe and Fe-B pairs. Experiments suggest that elevated substrate temperature during laser annealing may inhibit the formation of these deep hole traps.

Relaxation Behavior of Metastable As and P Concentrations in Si After Pulsed and CW Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Goetzlich ◽  
P.H. Tsien ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Time Dependence ◽  
Carrier Concentration ◽  
Laser Irradiation ◽  
Solid Solutions ◽  
Laser Annealing ◽  
High Dose ◽  
Cw Laser ◽  
Different Temperatures ◽  
Removal Technique

ABSTRACTMetastable solid solutions of arsenic and phosphorus atoms were created by high-dose ion implantation in silicon, followed by annealing either with pulsed (Nd:YAG) or CW (CO2;) laser irradiation. The relaxation of these supersaturated layers was investigated by thermal post-treatment at temperatures between 600 and 1000°C. By measuring the time dependence of the sheet carrier concentration, the time constant and the activation energies for the relaxation of the electrically-active As and P atoms were investigated. In addition, the equilibrium carrier concentrations at different temperatures were obtained by Halleffect measurements in connection with a layer-removal technique.

Grain Enlargment in Polysilicon on Insulating Substrates Induced by Q-Switched Nd:Yag Laser Irradiation

1981 ◽  
Vol 4 ◽  
Author(s):  
R. J. Falster ◽  
G. E. J. Eggermont ◽  
J. F. Gibbons
Keyword(s):  
Surface Morphology ◽  
Substrate Temperature ◽  
Laser Irradiation ◽  
Laser Power ◽  
Threshold Value ◽  
Oxide Thickness ◽  
Systematic Investigation ◽  
Incident Laser ◽  
Polysilicon Film ◽  
Incident Laser Power

ABSTRACTA systematic investigation of the formation of large grained rings in polysilicon by Q-switched laser irradiation has been performed. Parameters varied in this study were polysilicon thickness, substrate temperature and underlying oxide thickness. Increasing ring widths were obtained for increasing substrate temperature, polysilicon film thickness and underlying oxide thickness. The width of these rings was found to be independent of incident laser power above a certain threshold value. Surface morphology and the occurrence of cracking and ablation in these films as a function of these parameters was also investigated.

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

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