Applications of a Continuous Wave Incoherent Light Source (Cwils) to Semiconductor Processing

1982 ◽  
Vol 13 ◽  
Author(s):  
H.B. Harrison ◽  
S.T. Johnson ◽  
B. Cornish ◽  
F.M. Adams ◽  
K.T. Short ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Light Source ◽  
Low Dose ◽  
Continuous Wave ◽  
Semiconductor Devices ◽  
Semiconductor Processing ◽  
Incoherent Light ◽  
Conventional Furnace ◽  
Ion Implanted

ABSTRACTWe present results which highlight applications of a continuous wave incoherent light source in the processing of semiconductor devices. In particular, damage removal and activation of ion implanted gallium arsenide is demonstrated for both capless and capped annealing of low dose implants at temperatures of > 800°C for times < 10 s. For gallium arsenide FET applications, we demonstrate that it is possible to simultaneously carry out activation, contacting and interconnection steps by utilizing thermomigration processes which are not available with conventional furnace processing. In silicon we demonstrate that shallow multi layer bipolar structures can be successfully fabricated with anneal cycles that lead to supersaturation effects and negligible diffusion.

Terahertz continuous-wave large-area traveling-wave photomixers on high-energy low-dose ion-implanted GaAs

2007 ◽  
Vol 90 (17) ◽  
pp. 171109 ◽  
Author(s):  
E. A. Michael ◽  
I. Cámara Mayorga ◽  
R. Güsten ◽  
A. Dewald ◽  
R. Schieder
Keyword(s):  
Traveling Wave ◽  
Low Dose ◽  
Continuous Wave ◽  
High Energy ◽  
Large Area ◽  
Ion Implanted

Solid Solubility of Sb and Te Implanted GaAs Following Solid Phase Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
S.T. Johnson ◽  
K.G. Orrman-Rossiter ◽  
J.S. Williams
Keyword(s):  
Solid Solubility ◽  
Continuous Wave ◽  
Solid Phase ◽  
High Dose ◽  
Incoherent Light ◽  
Ion Channeling ◽  
Argon Ion Laser ◽  
Conventional Furnace ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTHigh dose antimony and tellurium implanted (100) GaAs wafers have been annealed in the solid phase under various time/temperature conditions using a conventional furnace, a rapid incoherent light source and a continuous wave CW Argon ion laser. The samples were capped with RF sputtered SiO2 prior to annealing and analysed using 2MeV He++ ion channeling to determine the solid solubility of the implanted ions. Results indicate that the Te is more soluble than Sb; highest solubilities measured were 6 × 1020cm−3 for Te and 1.3 × 1020cm−3 for Sb.

Incoherent Light Annealing of Selectively Implanted GaAs for Mesfet Applications

1984 ◽  
Vol 35 ◽  
Author(s):  
S.A. Kitching ◽  
M.H. Badawi ◽  
S.W. Bland ◽  
J. Mun
Keyword(s):  
Low Dose ◽  
Device Performance ◽  
Incoherent Light ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Dc Characteristics ◽  
Conventional Furnace Annealing ◽  
Better Than

ABSTRACTCapped and capless incoherent light annealing of high and low dose silicon implants into GaAs have been compared with conventional capless furnace annealing of the same implants. The yield and uniformity of DC characteristics of selectively implanted depletion mode MESFET's fabricated on 2-inch wafers annealed by the above three methods have also been compared. Capped incoherent light annealing was found to give results comparable to and in some cases better than conventional furnace annealing both in terms of activation of the implants and also device performance.

Ion‐implanted nitrogen in gallium arsenide

1973 ◽  
Vol 44 (10) ◽  
pp. 4393-4399 ◽  
Author(s):  
A. H. Kachare ◽  
W. G. Spitzer ◽  
A. Kahan ◽  
F. K. Euler ◽  
T. A. Whatley
Keyword(s):  
Gallium Arsenide ◽  
Ion Implanted
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