KrF Laser-Induced Chemical Etching of Nickel with Br2

1988 ◽  
Vol 129 ◽  
Author(s):  
George W. Tyndall ◽  
Christopher R. Moylan
Keyword(s):  
Kinetic Data ◽  
Chemical Etching ◽  
Etch Rate ◽  
Quartz Crystal ◽  
Normal Incidence ◽  
Sensitivity Function ◽  
Uv Laser ◽  
Polycrystalline Nickel ◽  
Subsequent Removal ◽  
Laser Induced Etching

ABSTRACTA quartz crystal microbalance (QCM) has been used to study the 248 nm laser-induced etching of nickel by Br2. The experiment consists of focusing a pulsed UV laser beam at normal incidence onto the surface of a quartz crystal coated with 1μm of polycrystalline nickel. Absolute etch rates of nickel, in terms of mass removed per unit time, are determined from the integrated sensitivity function of the 6Mhz crystals used in this work. The dependence of the etch rate on Br2 pressure and laser fluence was measured. The kinetic data obtained from these measurements show that the mechanism of the etching process is dominated by the formation and the subsequent removal of a NixBry monolayer.

Uv Laser-Induced Etching of the First-Row Transition Metals

1989 ◽  
Vol 158 ◽  
Author(s):  
George W. Tyndall
Keyword(s):  
Transition Metals ◽  
Laser Beam ◽  
Quartz Crystal Microbalance ◽  
Laser Fluence ◽  
Quartz Crystal ◽  
Normal Incidence ◽  
Uv Laser ◽  
Polycrystalline Metal ◽  
Kinetic Information ◽  
Laser Induced Etching

ABSTRACTThe 248 nm excimer laser-induced etching of Ti, Cr, Fe, Co, Ni, and Cu by Br2 has been studied. The experiment consists of focusing the pulsed UV laser beam at normal incidence onto the surface of a quartz crystal microbalance (QCM) coated with 1μm of polycrystalline metal. Absolute etch rates are determined as a function of the Br2 pressure and the laser fluence. On the basis of the kinetic information, four mechanisms are proposed to explain the etching of these transition metals.

Enhanced etch rate of deep-UV laser induced etching of diamond in low pressure conditions

2020 ◽  
Vol 117 (11) ◽  
pp. 111601 ◽  
Author(s):  
C. G. Baldwin ◽  
J. E. Downes ◽  
R. P. Mildren
Keyword(s):  
Etch Rate ◽  
Low Pressure ◽  
Uv Laser ◽  
Deep Uv ◽  
Laser Induced Etching

Fine MCP Decapsulation Technology Development

2006 ◽  
Author(s):  
Jianwei Zhou ◽  
Wei Zheng ◽  
Taekoo Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Technology Development ◽  
New Technology ◽  
Ammonium Hydroxide ◽  
Mechanical Polishing ◽  
Technology Process ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Die Surface

Abstract Multi-Chip Package (MCP) decapsulation is now becoming a rising problem. Because for traditional decapsulation method, acid can’t dissolve the top silicon die to expose the bottom die surface in MCP. It makes inspecting the bottom die in MCP is difficult. In this paper, a new MCP decapsulation technology combining mechanical polishing with chemical etching is introduced. This new technology can remove the top die quickly without damaging the bottom die using KOH and Tetra-Methyl Ammonium Hydroxide (TMAH). The technology process and relative application are presented. The factors that affect the KOH and TMAH etch rate are studied. The usage difference between the two etchant is discussed.

Wet Chemical Etching of Zn-containing oxides and HfO2 for the fabrication of Transparent TFTs

2009 ◽  
Vol 1201 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Jun Young Kim ◽  
Seung-Cheol Han ◽  
Joon Seop Kwak ◽  
Ji-Myon Lee
Keyword(s):  
Sulfuric Acid ◽  
Surface Morphology ◽  
Chemical Etching ◽  
Etch Rate ◽  
Room Temperature ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractThe etch rate and surface morphology of Zn-containing oxide and HfO2 films after wet chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO2 films by BF acid proceeded through lateral widening and merging of the initial irregular pits.

Quartz Crystal Double-Ended Tuning Fork Resonator for High Resolution Force Sensing

2014 ◽  
Vol 609-610 ◽  
pp. 1181-1184 ◽  
Author(s):  
Jian Wang ◽  
Cong Zhao ◽  
Shi Ming Zhang ◽  
Jiang Bo Zou
Keyword(s):  
High Resolution ◽  
Vibration Amplitude ◽  
Chemical Etching ◽  
Quartz Crystal ◽  
Tuning Fork ◽  
Ambient Condition ◽  
Force Sensing ◽  
Vibration Attenuation ◽  
Attenuation Structure ◽  
Crystal Wafer

This paper reports a novel piezoelectric quartz crystal double-ended tuning fork (DETF) resonator with vibration attenuation structure, which is suitable for high resolution force sensing. The DETF resonator was designed to work in the fundamental flexure mode, and manufactured along the Y direction based on the Z-cut quartz crystal wafer using photolithographic and anisotropic chemical etching of quartz crystal. The resonance frequency of the DETF resonator is 39.1KHz. Vibration amplitude of the DETF resonator was measured and the experimental results show that vibration amplitude of the joint of DETF resonator is almost three orders of magnitude lower than that of midpoint of DETF, and the quality factor is up to 7750 at ambient condition and 59600 in vacuum, respectively.

scholarly journals Etch Rate and Dimensional Accuracy of Machinable Glass Ceramics in Chemical Etching

2010 ◽  
Vol 65 ◽  
pp. 251-256
Author(s):  
Huey Tze Ting ◽  
Khaled A. Abou-El-Hossein ◽  
Han Bing Chua
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Semiconductor Industry ◽  
Etching Rate ◽  
Glass Ceramics ◽  
Dimensional Accuracy ◽  
Indentation Method ◽  
Etching Solution ◽  
Micro Electromechanical System ◽  
Chemical Etchant

Machinable glass ceramic (MGC) is well known in the micro-electromechanical system and semiconductor industry. Chemical etching is used in this experiment to study the performance of MGC. The etching rate of MGC and its accuracy by indentation method is studied. The categoric parameter applied here is the type of chemical etchant used: hydrochloric (HCl), hydrophosphoric (H3PO4) and hydrobromic (HBr) acids; and, numerical parameters are etching temperature and etching solution. The experimental investigation that was carried out is governed by design of experiment (DoE).

Alpha track registration and revelation in CR-39 using new etching method for ultratrace alpha radioactivity quantification in solution media

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sushma S. Chavan ◽  
Amol M. Mhatre ◽  
Ashok K. Pandey ◽  
Hemlata K. Bagla
Keyword(s):  
Induction Time ◽  
Chemical Etching ◽  
Etch Rate ◽  
Phase Transfer ◽  
Alpha Activity ◽  
Phase Transfer Catalyst ◽  
Tetraethylammonium Bromide ◽  
Etching Method ◽  
Track Etch ◽  
Registration Efficiency

Abstract A CR-39 based method was developed for measuring the ultra-trace alpha radio activities in aqueous samples having curie levels of γ/β-radio activities. The chemical etching method was optimized to reveal the alpha tracks in CR-39. This new chemical etching method involved the use of a phase transfer catalyst tetraethylammonium bromide which reduced the track revelation induction time without deteriorating the track-etch parameters. The alpha track-etch parameters such as bulk-etch rate, track-etch rate, induction time, and the critical angle of alpha track registration were measured at 60 and 70 °C, with and without using a phase transfer catalyst in the chemical etching for the comparison and optimization. The track registration efficiency of CR-39 in the solution medium was measured using the samples having known alpha activity of mixPu, and value obtained was found to be (4.42 ± 0.12) × 10−4 cm. The registration efficiency value thus obtained was corroborated with the expected efficiency expected from the calculated range of alpha particles in the solution. This CR-39 based method was employed to quantify the alpha activity, as low as 0.2 Bq mL−1, in the aqueous radiopharmaceutical samples having the curie levels of γ/β radio activities.

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