Ion Implantation of Boron in Diamond

1988 ◽  
Vol 128 ◽  
Author(s):  
G. S. Sandhu ◽  
M. L. Swanson ◽  
W. K. Chu
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Natural Diamond ◽  
Liquid Nitrogen Temperature ◽  
Type Ii ◽  
Electrical Measurements ◽  
Boron Ions ◽  
Dopant Atoms ◽  
P Type ◽  
Diamond Type

ABSTRACTIt has been a challenge to inject dopant atoms onto diamond lattice sites by ion implantation, because of the complications of ion damage and defect clustering during annealing. We re-investigated this topic by implanting boron ions into an insulating natural diamond ( type II-A ) which was predamaged by carbon ion implantation. Both of the implantations were performed at liquid nitrogen temperature. The amount of pre-damage was adjusted to produce enough vacancies and interstitials in diamond to promote boron substitutionality during subsequent annealing. Samples were characterized by optical absorption and electrical measurements. It was found that optical absorption of the implanted samples strongly depends on the post implant annealing sequence. The activation energies obtained from electrical measurements match very closely to those due to boron atoms in natural p-type diamonds. Photoconductivity measurements showed that the fraction of remaining electrically active radiation defects in the implanted and annealed samples depends on the relative fluences of boron and carbon.

scholarly journals The Formation of Amorphous Silicon by Light Ion Damage

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Shih ◽  
J. Washburn ◽  
E.R. Weber ◽  
R. Gronsky
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Point Defect ◽  
Point Defects ◽  
Liquid Nitrogen Temperature ◽  
Paramagnetic Resonance ◽  
High Resolution Tem ◽  
Different Temperatures ◽  
Boron Ions ◽  
Point Defect Clusters

ABSTRACTA model for formation of amorphous silicon by light ion implantation is proposed. It is suggested that accumulation of point defects and/or complexes is required at the initial stage of the amorphization process. Amorphous zones can only form at the end of incoming light ion tracks when the pre-accumulated concentration of point defects reaches a critical value. Depending on the uniformity of the point defect distribution, two possibilities for the second stage of amorphization are suggested when ion implantation is performed at different temperatures.Silicon wafers implanted with boron ions below and above the critical amorphization dose at various temperatures have been investigated using cross section specimens in high resolution TEM. Complementary analyses of these specimens by Electron Paramagnetic Resonance have revealed the presence of dangling bonds in amorphous zones and point defect clusters. Extrinsic stacking faults with 1/3 <111> displacements and other smaller distortions with 1/x<111> displacements were also found to result from the amorphization process. Liquid nitrogen temperature was found to be necessary to cause complete amorphization of silicon by boron ion implantation.

A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

2017 ◽  
Vol 5 (26) ◽  
pp. 13400-13410 ◽  
Author(s):  
Congxin Xia ◽  
Juan Du ◽  
Wenqi Xiong ◽  
Yu Jia ◽  
Zhongming Wei ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Broad Spectrum ◽  
Band Alignment ◽  
Promising Material ◽  
Type Ii ◽  
Photovoltaic Applications ◽  
P Type

Type-II band alignment, a suitable direct gap (1.519 eV), superior optical-absorption (∼105) and a broad spectrum make the GeSe/SnS heterobilayer a promising material for photovoltaic applications.

Amorphization of Silicon by Boron Ion Implantation

1986 ◽  
Vol 71 ◽  
Author(s):  
Y. Shih ◽  
J. Washburn ◽  
R. Gronsky ◽  
E.R. Weber
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Critical Energy ◽  
High Energy ◽  
Dose Rates ◽  
Initial Stage ◽  
Boron Ions

AbstractAmorphization of silicon due to implantation of boron ions which is the lightest element used for I.C. fabrication processes, has been systematically studied for various temperatures, voltages and dose rates. A model for formation of amorphous silicon by light ion implantation is proposed. It is suggested that accumulation of point defects and/or clusters is required at the initial stage of amorphization process. Diinterstitial -divacancy pairs are suggested to be the embryos of amorphous zones formed during implantation at room temperature. Out -diffusion of highly mobile interstitials during amorphization is thought to explain differences in the critical energy for amorphization with low and high energy implantation at liquid nitrogen temperature.

A Novel Method For The Diffusion Of Boron In 60-80 Micron Size Natural Diamond Type II/A Powder

2006 ◽  
Vol 929 ◽  
Author(s):  
Adrian E. Mendez ◽  
Mark A Prelas ◽  
Michael Glascock ◽  
Tushar K Ghosh
Keyword(s):  
Band Gap ◽  
Natural Diamond ◽  
Wide Band ◽  
Experimental Results ◽  
Prompt Gamma ◽  
Type Ii ◽  
Wide Band Gap ◽  
Boron Powder ◽  
Micron Size ◽  
Diamond Type

ABSTRACTThe purpose of this paper is to report the experimental results of boron doping on 60-80 micron size diamond particles using Field Enhanced Diffusion with Optical activation (FEDOA) [1-5]. Diamond is a wide band gap material with unique combinations of optical, thermal, mechanical and electronic properties that can be useful for a number of applications including optoelectronic applications and micro sensor technology. The incorporation of boron into diamond has been proven to change its electrical properties and convert the diamond from insulator to a p-type semiconductor [3]. A promising technique for incorporation of impurities into diamond is FEDOA. FEDOA drives impurities into single crystalline diamond material and we have used this method in this study [5-7]. FEDOA uses a combination of thermal diffusion with bias plus thermal ionization and optical ionization I simultaneously. A modified version of FEDOA was implemented for the diffusion of boron in natural diamond type II/a powder of size 60-80 microns (Figure 1). The diamond powder was obtained from Microdiamant and has 99.9% purity. The boron powder used in the experiment was amorphous, 325 mesh 90 %(Assay), Mg (5%) nominal obtained from AESAR. A ratio of 3:1 Boron-Diamond mixture was used for the doping process. A heating element and a diamond-boron powder mixture holder were designed and incorporated in the FEDOA system. Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS) were used to study the diamond-doped morphology and identify impurities. Boron and hydrogen concentration results in the doped samples were studied using Prompt Gamma Neutron Activation Analysis (PGNAA) at the University of Missouri Research Reactor (MURR). Raman analysis of the treated samples was done as part of this work. The experimental results and analysis show that the samples were doped with boron. It was also found that samples with high boron concentration exhibited a high electrical conductivity. This work presents additional evidence that boron can be diffused into natural diamond powders. It also demonstrates that the FEDOA diffusion process is not only a powerful technique for the diffusion of impurities into wide band-gap materials in the form of single crystal plates, polycrystalline plate but also in a powder form with the modified FEDOA process.

Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well

2012 ◽  
Vol 717-720 ◽  
pp. 781-784 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Miwako Iijima ◽  
Takahiro Nagano ◽  
Kenji Fukuda ◽  
Hajime Okumura
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Impurity Concentration ◽  
Single Shot ◽  
Type Ii ◽  
Type Region ◽  
Channel Mobility ◽  
P Type ◽  
Channel Properties ◽  
Ion Implanted

Fabricated were 4H-SiC p-channel MOSFETs in two types of ion-implanted n-well regions and in the n-type substrate as a control. Effects of the n-well structure on the electrical properties were investigated. P-channel MOSFETs fabricated in the uniform doped n-well by using multiple ion-implantations showed inferior on-state characteristics to that of the control MOSFET, while those fabricated in the retrograde n-wells by using single-shot ion-implantation without additional implantation to form the surface p-type region indicated improved channel properties. The Vth values were controlled by the impurity concentration and depth of the surface p-type region, and the values of channel mobility were nearly equal to that of the control MOSFET. Good sub-threshold characteristics for the type II devices were demonstrated.

Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

2021 ◽  
pp. 150274
Author(s):  
Adriano Panepinto ◽  
Arnaud Krumpmann ◽  
David Cornil ◽  
Jérôme Cornil ◽  
Rony Snyders
Keyword(s):  
Ion Implantation ◽  
Electrical Characteristics ◽  
P Type

scholarly journals Study of the Molecule Adsorption Process during the Molecular Doping

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1899
Author(s):  
Mattia Pizzone ◽  
Maria Grazia Grimaldi ◽  
Antonino La La Magna ◽  
Neda Rahmani ◽  
Silvia Scalese ◽  
...  
Keyword(s):  
Density Functional ◽  
Electrical Characterization ◽  
Molecular Surface ◽  
Doping Profile ◽  
Electrical Measurements ◽  
Self Assembled Monolayer ◽  
Depth Study ◽  
Molecular Doping ◽  
Dopant Atoms ◽  
Molecular Layers

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules–substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p–n junction hybrids with electrodeposited Cu2O

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai
Keyword(s):  
Charge Carriers ◽  
Type Ii ◽  
Electrochemical Preparation ◽  
Enhanced Absorption ◽  
Absorption Of Light ◽  
Vertically Aligned ◽  
P Type

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.

scholarly journals Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

2009 ◽  
Vol 106 (1) ◽  
pp. 013719 ◽  
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Ion Implantation ◽  
Deep Levels ◽  
P Type
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