Thin Films of p-Type CdTe Grown with Ion-Beam-Assisted Doping

1988 ◽  
Vol 128 ◽  
Author(s):  
Paul Sharps ◽  
Alan L. Fahrenbruch ◽  
Adolfo Lopez-Otero ◽  
Richard H. Bube

The purpose of the present work is to investigate p-CdTe thin films grown by ionassisted doping (IAD). Controlled doping in homo-epitaxial films resulting in carder densities up to 2×1017 cm-3 was obtained using P ions as the dopant. About 1.5% of the impinging P ions became electrically active in the films. Solar cells of n-CdS/p-CdTe were prepared and used as a diagnostic tool in understanding the p-CdTe films.

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
A. Gonzalez-Cisneros ◽  
F. L. Castillo-Alvarado ◽  
J. Ortiz-Lopez ◽  
G. Contreras-Puente

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compoundCdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimentalC-V(capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.


2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 605-608 ◽  
Author(s):  
A. NUÑEZ ◽  
P. K. NAIR ◽  
M. T. S. NAIR

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).


2021 ◽  
Vol 130 (16) ◽  
pp. 163104
Author(s):  
Mohammad M. Taheri ◽  
Triet M. Truong ◽  
Siming Li ◽  
William N. Shafarman ◽  
Brian E. McCandless ◽  
...  

1986 ◽  
Vol 143 (2) ◽  
pp. 193-199 ◽  
Author(s):  
N. Romeo ◽  
V. Canevari ◽  
W. Dulak

Author(s):  
Lei Wan ◽  
Zhizhong Bai ◽  
Bo Chen ◽  
Renliang Sun ◽  
Guoshun Jiang ◽  
...  
Keyword(s):  
One Step ◽  

RSC Advances ◽  
2018 ◽  
Vol 8 (30) ◽  
pp. 16887-16896 ◽  
Author(s):  
Xin Dai ◽  
Hongwei Lei ◽  
Cong Chen ◽  
Yaxiong Guo ◽  
Guojia Fang

Inorganic p-type films with high mobility are very important for opto-electronic applications.


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