Damage Formation in Semiconductors During Mev Ion Implantation

1988 ◽  
Vol 128 ◽  
Author(s):  
T. P. Sjoreen ◽  
O. W. Holland ◽  
M. K. El-Ghor ◽  
C. W. White
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Single Crystals ◽  
Entire Range ◽  
Damage Accumulation ◽  
Low Energy ◽  
Cross Sectional ◽  
Monotonic Increase ◽  
Ion Channeling ◽  
Ion Damage

ABSTRACTDamage produced by 1.0-2.5 MeV self-ion and O-ion implantation into Si and Ge single crystals has been characterized by cross-sectional electron microscopy and ion channeling. In Si, it is observed that the damage morphology varies substantially along the ion's track. Near the end-of-range of the ion, damage accumulation is very similar to that which occurs during medium- to low-energy implantation (i.e., damage increases monotonically with dose until the lattice is made completely amorphous). In front of this end-of-range region, however, damage saturates at a very low level for moderate implantation fluences. A model based on homogeneous damage nucleation in Si is discussed. For Ge, damage accumulation is very different; a monotonic increase of damage with dose is observed over the entire range of the ion. Possible mechanisms responsible for the differences between Si and Ge are discussed.

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy

2019 ◽  
Vol 963 ◽  
pp. 251-254
Author(s):  
Toshiyuki Isshiki ◽  
Takahiro Sato ◽  
Masaki Hasegawa ◽  
Kentaro Ohira ◽  
Kenji Kobayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Layer ◽  
Stacking Faults ◽  
Low Energy ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Etch Pit

Dislocations and stacking faults in 4H-SiC (0001) si epitaxial wafer was inspected by mirror projection electron microscopy (MPJ) with the aid of low-energy SEM and FIB-STEM. MPJ observation found dislocation conversion near the wafer surface, and the conversion was confirmed by micro etch pit and low energy SEM method. Another conversion occurred in the epitaxial layer on array of TED half loops, which were detected by MPJ, was also observed by cross-sectional STEM.

Ion Damage and Annealing of Epitaxial Gallium Nitride and Comparison With GaAs/AlGaAs Materials

1995 ◽  
Vol 395 ◽  
Author(s):  
H.H. Tan ◽  
J.S. Williams ◽  
C. Yuan ◽  
S.J. Pearton
Keyword(s):  
Gallium Nitride ◽  
Ion Implantation ◽  
Liquid Nitrogen ◽  
Liquid Nitrogen Temperature ◽  
Annealing Behaviour ◽  
Al Content ◽  
Ion Channeling ◽  
Ion Damage ◽  
High Al Content

ABSTRACTIon damage build up has been measured by ion channeling in good quality epitaxial GaN films on sapphire. GaN is found to be remarkably resistant to ion damage, with extremely efficient dynamic defect annihilation occurring at liquid nitrogen temperature during ion implantation. When disorder does accumulate at doses around 1016cm−2 of 90 keV Si ions, the surface appears to be a strong sink for damage build up and possibly the nucleation of amorphous layers. Once ion disorder has been produced in GaN, it is extremely difficult to remove by annealing. GaN exhibits disordering and annealing behaviour which is somewhat similar to that in high Al-content AlGaAs.

Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation

1998 ◽  
Vol 540 ◽  
Author(s):  
N.A. Sobolev ◽  
U. Kaiser ◽  
I.I. Khodos ◽  
H. Presting ◽  
U. König
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Point Defects ◽  
Dose Range ◽  
Cross Sectional ◽  
Layer Interaction ◽  
Transmission Electron ◽  
The Cross ◽  
Electron Microdiffraction

AbstractThe damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction. It was found that the amorphization occurs in a narrow dose range of (1 – 2) × 1014 cm-2 via accumulation of point defects. The conclusion drawn earlier (Mater. Sci. Forum 248-249, 289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed. Possible mechanisms of the layer interaction leading to the observed behavior are discussed.

Tem, Raman, and Langmuir Probe Studies of the Heteroepitaxial Growth of Metastable Cd(x)pb (1–X) Te Alloys Deposited on BaF2 by Low-Energy Bias Sputtering

1990 ◽  
Vol 201 ◽  
Author(s):  
Suhit R. Das ◽  
John G. Cook ◽  
David J. Lockwood
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Langmuir Probe ◽  
Low Energy ◽  
Heteroepitaxial Growth ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Magnetron Sputter

AbstractMetastable Cd(x)Pb(1–x)Te films with x values from 0 to 0.47, well past the range of bulk thermodynamic solubility, have been grown on single crystal (lll) BaF2 by co-deposition from CdTe and PbTe r.f. magnetron sputter targets. Cross-sectional transmission electron microscopy and transmission electron diffraction revealed epitaxial growth across the interface. However, the lattice of the deposited epilayers was observed to be typically rotated 180°C about the surface normal <111> axis of the substrate. Raman spectra of the alloys showed no evidence of segregation. Langmuir probe diagnostics were employed to estimate the energy of the ions incident on the substrate during growth which promote extended miscibility in the alloy epilayers.

Electron microscope study of differential ion implantation damage in AlAs/GaAs epitaxial layers

1990 ◽  
Vol 48 (4) ◽  
pp. 584-585
Author(s):  
A G Cullis ◽  
D C Jacobson ◽  
J M Poate ◽  
P W Smith
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Ion Damage ◽  
High Resolution Tem ◽  
Superlattice Structures ◽  
Heteroepitaxial Layers

Ion implantation processing applied to superlattice structures can produce controlled intermixing of the different strata and a range of studies have focused with special interest upon the GaAs-GaAlAs and InP-InGaAs systems. However, there can be marked differences in the susceptibilities of the superlattice materials to ion damage build-up which, thus, complicates interpretation. The present work has applied transmission electron microscopy (TEM) to the study of differential ion damage in the GaAs-AlAs system, together with an examination of thermal annealing behaviour.Single ˜90nm heteroepitaxial layers of AlAs were produced within a GaAs matrix grown by molecular beam epitaxy upon (001) GaAs substrates. Ion damage was introduced (77K) using Si+ ions with overlaid doses of 3.5×l014 ions/cm2 at 150keV and 7×1014 ions/cm2 at 200keV. Some samples were then subjected to rapid thermal annealing for 10s at 600°C or 800°C. The structure of the material after the various treatments was studied in cross-sectional samples by both conventional and high resolution TEM using a JEM 4000EX instrument operated at 400kV.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 320 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.- J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructurie by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0× 1017 1r/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

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