The Synthesis of Aluminum Nitride from Aluminum Hydride

1988 ◽  
Vol 121 ◽  
Author(s):  
Atsushi Ochi ◽  
H. KENT BOWEN ◽  
Wendell E. Rhine
Keyword(s):  
Aluminum Nitride ◽  
Room Temperature ◽  
Condensation Reaction ◽  
Aluminum Hydride ◽  
White Powder ◽  
Synthetic Route ◽  
Stoichiometric Amount

ABSTRACTThe reaction between ammonia and aluminum hydride (AIH3) was investigated as a possible synthetic route to aluminum nitride (AIN), using tetrahydromran (THF) as the solvent. When an excess of ammonia was employed, a white powder was obtained which was converted to AIN by calcination. However, when a stoichiometric amount of ammonia was used, a soluble intermediate was obtained. This intermediate polymerized slowly at room temperature via a condensation reaction involving the elimination of hydrogen to give a gel that could be converted to AIN.

A 35-year-old mystery solved: a facile synthetic route and structural confirmation of tetrachlorobis(diethyl ether)tungsten(IV)

2021 ◽  
Vol 77 (4) ◽  
Author(s):  
Thomas E. Shaw ◽  
Alfred P. Sattelberger ◽  
Titel Jurca
Keyword(s):  
Crystal Structure ◽  
Diethyl Ether ◽  
Thermal Instability ◽  
Room Temperature ◽  
Surface Characteristics ◽  
Hirshfeld Surface ◽  
Asymmetric Unit ◽  
Synthetic Route ◽  
X Ray ◽  
Elemental Analyses

The true identity of the diethyl ether adduct of tungsten(IV) chloride, WCl4(Et2O) x , has been in doubt since 1985. Initially postulated as the bis-adduct, WCl4(Et2O)2, questions arose when elemental analyses were more in line with a mono-ether adduct, viz. WCl4(Et2O). It was proposed that this was due to the thermal instability of the bis-adduct. Here, we report the room-temperature X-ray crystal structure and Hirshfeld surface characteristics of trans-tetrachloridobis(diethyl ether)tungsten(IV), trans-WCl4(Et2O)2 or trans-[WCl4(C4H10O)2]. The compound crystallizes, with half of the molecule in the asymmetric unit, in the centrosymmetric space group P21/n. The W—O distance is 2.070 (2) Å, while the W—Cl distances are 2.3586 (10) and 2.3554 (10) Å.

scholarly journals Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

Materials ◽  
2017 ◽  
Vol 10 (11) ◽  
pp. 1266 ◽  
Author(s):  
Chengkun Ma ◽  
Hailong Chen ◽  
Chao Wang ◽  
Jifeng Zhang ◽  
Hui Qi ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Inorganic Phosphate ◽  
Room Temperature ◽  
Ultrahigh Temperature

scholarly journals Well-defined silica supported aluminum hydride: another step towards the utopian single site dream?

2015 ◽  
Vol 6 (10) ◽  
pp. 5456-5465 ◽  
Author(s):  
Baraa Werghi ◽  
Anissa Bendjeriou-Sedjerari ◽  
Julien Sofack-Kreutzer ◽  
Abdesslem Jedidi ◽  
Edy Abou-Hamad ◽  
...  
Keyword(s):  
Room Temperature ◽  
Aluminum Hydride ◽  
Single Site ◽  
Parallel Pathways

Reaction of triisobutylaluminum with SBA15700 at room temperature occurs by two parallel pathways involving either silanol or siloxane bridges.

scholarly journals Environmentally friendly and facile synthesis of Rh nanoparticles at room temperature by alkaline ethanol solution and their application for ethanol electrooxidation

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3161-3169 ◽  
Author(s):  
Fuhai Li ◽  
Hanqin Weng ◽  
Yun Shang ◽  
Zuoming Ding ◽  
Zheng Yang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Environmentally Friendly ◽  
Ethanol Solution ◽  
Ethanol Electrooxidation ◽  
Synthetic Route ◽  
Facile Synthesis

A facile, fact and green synthetic route was developed to prepare Rh nanoparticles at room temperature.

scholarly journals Aluminum nitride doped with transition metal group atoms as a material for spintronics

2020 ◽  
pp. 162-172
Author(s):  
S.S. Khludkov ◽  
◽  
I.A. Prudaev ◽  
L.O. Root ◽  
O.P. Tolbanov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Scientific Literature ◽  
Material Growth ◽  
Metal Group

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

scholarly journals Room-Temperature Quantum Emitter in Aluminum Nitride

ACS Photonics ◽  
2020 ◽  
Vol 7 (7) ◽  
pp. 1636-1641 ◽  
Author(s):  
Sam G. Bishop ◽  
John P. Hadden ◽  
Faris D. Alzahrani ◽  
Reza Hekmati ◽  
Diana L. Huffaker ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Room Temperature ◽  
Quantum Emitter

Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Lattice Distortion ◽  
High Thermal Conductivity ◽  
Hybrid Integrated Circuit ◽  
Oxygen Contamination ◽  
Internal Strains ◽  
Oxygen Impurities

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

scholarly journals Practical Synthesis of Precursors of Cyclohexyne and 1,2-Cyclohexadiene

Synthesis ◽  
2019 ◽  
Vol 51 (07) ◽  
pp. 1561-1564 ◽  
Author(s):  
Kentaro Okano ◽  
Ryo Nakura ◽  
Kazuki Inoue ◽  
Atsunori Mori
Keyword(s):  
Room Temperature ◽  
Practical Method ◽  
Enol Ether ◽  
One Pot ◽  
Subsequent Formation ◽  
Silyl Group ◽  
Stoichiometric Amount ◽  
Lithium Enolate ◽  
Silyl Enol Ether ◽  
Practical Synthesis

This study investigated a practical method for regiocontrolled synthesis of precursors of strained cyclohexynes and 1,2-cyclohexadienes, which is a one-pot procedure consisting of a rearrangement of silyl enol ether and subsequent formation of the enol triflates. Triethylsilyl enol ether, derived from cyclohexanone, was treated with a combination of LDA and t-BuOK in n-hexane/THF to encourage the migration of the silyl group to generate an α-silyl enolate. Subsequently, the α-silyl enolate was reacted with Comins’ reagent to yield the corresponding enol triflate. Finally, the α-silylated trisubstituted lithium enolate for the synthesis of 1,2-cyclohexadiene precursor was isomerized in the presence of a stoichiometric amount of water for one hour at room temperature to exclusively provide tetrasubstituted lithium enolate for the synthesis of cyclohexyne precursor in one pot.

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