scholarly journals Room-Temperature Quantum Emitter in Aluminum Nitride

ACS Photonics ◽  
2020 ◽  
Vol 7 (7) ◽  
pp. 1636-1641 ◽  
Author(s):  
Sam G. Bishop ◽  
John P. Hadden ◽  
Faris D. Alzahrani ◽  
Reza Hekmati ◽  
Diana L. Huffaker ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Room Temperature ◽  
Quantum Emitter

scholarly journals Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

Materials ◽  
2017 ◽  
Vol 10 (11) ◽  
pp. 1266 ◽  
Author(s):  
Chengkun Ma ◽  
Hailong Chen ◽  
Chao Wang ◽  
Jifeng Zhang ◽  
Hui Qi ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Inorganic Phosphate ◽  
Room Temperature ◽  
Ultrahigh Temperature

scholarly journals Aluminum nitride doped with transition metal group atoms as a material for spintronics

2020 ◽  
pp. 162-172
Author(s):  
S.S. Khludkov ◽  
◽  
I.A. Prudaev ◽  
L.O. Root ◽  
O.P. Tolbanov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Scientific Literature ◽  
Material Growth ◽  
Metal Group

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

The Synthesis of Aluminum Nitride from Aluminum Hydride

1988 ◽  
Vol 121 ◽  
Author(s):  
Atsushi Ochi ◽  
H. KENT BOWEN ◽  
Wendell E. Rhine
Keyword(s):  
Aluminum Nitride ◽  
Room Temperature ◽  
Condensation Reaction ◽  
Aluminum Hydride ◽  
White Powder ◽  
Synthetic Route ◽  
Stoichiometric Amount

ABSTRACTThe reaction between ammonia and aluminum hydride (AIH3) was investigated as a possible synthetic route to aluminum nitride (AIN), using tetrahydromran (THF) as the solvent. When an excess of ammonia was employed, a white powder was obtained which was converted to AIN by calcination. However, when a stoichiometric amount of ammonia was used, a soluble intermediate was obtained. This intermediate polymerized slowly at room temperature via a condensation reaction involving the elimination of hydrogen to give a gel that could be converted to AIN.

Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Lattice Distortion ◽  
High Thermal Conductivity ◽  
Hybrid Integrated Circuit ◽  
Oxygen Contamination ◽  
Internal Strains ◽  
Oxygen Impurities

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

scholarly journals Room-Temperature Visible Electroluminescence From Aluminum Nitride Thin Film Embedded With Aluminum Nanocrystals

2008 ◽  
Vol 55 (12) ◽  
pp. 3605-3609 ◽  
Author(s):  
Ming Yang ◽  
T. P. Chen ◽  
Yang Liu ◽  
Liang Ding ◽  
Jen It Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Aluminum Nanocrystals

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

2018 ◽  
Author(s):  
Nicholas V Proscia ◽  
Zav Shoton ◽  
Harishankar Jayakumar ◽  
Prithvi Reddy ◽  
Michael Dollar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter

Room-temperature quantum emitter arrays in hexagonal boron nitride

2017 ◽  
Author(s):  
Nicholas V Proscia ◽  
Zav Shoton ◽  
Harishankar Jayakumar ◽  
Prithvi Reddy ◽  
Marcus Doherty ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter

Self-Formed Aluminum Nitride Microtubes that Exhibit a Large Bending Stress

2001 ◽  
Vol 695 ◽  
Author(s):  
Morito Akiyama ◽  
Kazuhisa Shobu ◽  
Chao-Nan Xu ◽  
Kazuhiro Nonaka
Keyword(s):  
Thin Film ◽  
Hydrochloric Acid ◽  
Aluminum Nitride ◽  
Acid Solution ◽  
Film Thickness ◽  
Hydrochloric Acid Solution ◽  
Room Temperature ◽  
Bending Strength ◽  
Aluminum Foil ◽  
Bending Stress

ABSTRACTWe have investigated the aluminum nitride microtubes made of aluminum nitride thin film. Aluminum nitride thin film deposited on aluminum foil forms microtubes of itself at room temperature when the aluminum foil is dissolved in hydrochloric acid solution. The aluminum nitride microtubes exhibit a large bending stress of 1100 94 megapascals. The bending stress is more than three times larger than the bending strength of aluminum nitride bulk. The diameter of the microtubes is proportional to the film thickness. The bending stress is independent of the film thickness and is fixed.

Room temperature bonding of aluminum nitride ceramic and semiconductor substrate

2020 ◽  
Vol 46 (16) ◽  
pp. 25956-25963
Author(s):  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Eiji Higurashi ◽  
Kazunori Nishizono ◽  
Tsutomu Amano ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Room Temperature ◽  
Semiconductor Substrate
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