Heteroepitaxial Growth of A1203 Thin Films on Si By Lpcvd

1988 ◽  
Vol 116 ◽  
Author(s):  
M. Ishida ◽  
I. Katakabe ◽  
N. Ohtake ◽  
T. Nakamura
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Gate Insulator ◽  
Heteroepitaxial Growth ◽  
Mos Capacitors ◽  
Pressure Chemical ◽  
Relationship Of ◽  
Substrate Temperatures

AbstractHeteroepitaxial A1203 thin films were grown successfully on Si(lO0) substrates by low—pressure chemical vapor deposition (LP—CVD). The growth was performed at a pressure of 30 Torr by pyrolysis of N2 bubbled AI(CH3)3 and N20 at substrate temperatures above 1000ºC.RHEED patterns indicated that the grown films were ɤ—Al203 single crystals with an orientation relationship of ɤ—Al203(l00)//Si(l00). The ɤ—A1203 films were stable and did not show phase transition after a 1140ºC heat—treatment for 2hr. MOS capacitors with 500—Å—thick A1203 films as a gate insulator showed highfrequency capacitance—voltage (C—V) curves without hysteresis. The A1203 interface state density determined from quasi—static C—V measurements was 1.7 X 1011cm-2eV-1. It can be seen that ɤ—Al203 film is a promising new insulator for Si on Insulator (SOI) structures.

Investigation of the off-current in amorphous silicon thin film transistors for SiO2 and SiNx. gate insulators

1996 ◽  
Vol 424 ◽  
Author(s):  
Jeong Hyun Kim ◽  
Woong Sik Choi ◽  
Chan Hee Hong ◽  
Hoe Sup Soh
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Gate Insulator ◽  
Defect States ◽  
Silicon Thin Film ◽  
Pressure Chemical

AbstractThe off current behavior of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with an atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator were investigated at negative gate voltages. The a-Si:H TFT with SiO2 gate insulator has small off currents and large activation energy (Ea) of the off current compared to the a-Si:H TFT with SiNx gate insulator. The holes induced in the channel by negative gate voltage seem to be trapped in the defect states near the a-Si:H/SiO2 interface. The interface state density in the lower half of the band gap of a-Si:H/SiO2 appears to be much higher than that for a-Si:H/SiNx.

Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator

2007 ◽  
Vol 556-557 ◽  
pp. 787-790 ◽  
Author(s):  
Shiro Hino ◽  
Tomohiro Hatayama ◽  
Naruhisa Miura ◽  
Tatsuo Oomori ◽  
Eisuke Tokumitsu
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Drain Current ◽  
Interface State ◽  
State Density ◽  
Gate Insulator ◽  
Organic Chemical ◽  
Mos Capacitors ◽  
Significant Difference ◽  
Metal Organic

We have fabricated and characterized MOS capacitors and lateral MOSFETs using Al2O3 as a gate insulator. Al2O3 films were deposited by metal-organic chemical vapor deposition (MOCVD) at temperatures as low as 190 oC using tri-ethyl-aluminum and H2O as precursors. We first demonstrate from the capacitance – voltage (C-V) measurements that the Al2O3/SiC interface has lower interface state density than the thermally-grown SiO2/SiC interface. No significant difference was observed between X-ray photoelectron spectroscopy (XPS) Si 2p spectrum from the Al2O3/SiC interface and that from the SiC substrate, which means the SiC substrate was not oxidized during the Al2O3 deposition. Next, we show that the fabricated lateral SiC-MOSFETs with Al2O3 gate insulator have good drain current – drain voltage (ID-VD) and drain current – gate voltage (ID-VG) characteristics with normally-off behavior. The obtained peak values of field-effect mobility (μFE) are between 68 and 88 cm2/Vs.

Effect of annealing ambient on performance and reliability of low pressure chemical vapor deposited oxides for thin film transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
N. Bhat ◽  
A. Wang ◽  
K. C. Saraswat
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Interface State ◽  
State Density ◽  
Interfacial Stress ◽  
Bias Temperature Instability ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

AbstractThe performance and reliability of low pressure chemical vapor deposited (LPCVD) oxides subjected to oxidizing, inert and nitriding annealing ambients is characterized both at low temperature (600°C) and high temperature (950°C). The oxidizing ambient results in worse initial interface state density and charge to break down. We attribute this to the interfacial stress developed during the oxidation, due to the volume mismatch between Si and SiO2. The C-V measurements on poly-Si substrate capacitors and the charge pumping measurements on poly-Si thin film transistors (TFTs) indicate lower trap density for inert and nitriding ambients. The TFTs with inert anneal exhibit lower bias temperature instability compared to oxidizing ambient.

High Integrity SiO2/Al2O3 Gate Stack for Normally-off GaN MOSFET

2013 ◽  
Vol 1561 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Takehiko Nomura ◽  
Hirokazu Ueda ◽  
Katsushige Harada ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Field Effect ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Breakdown Field ◽  
Mos Transistors ◽  
Gate Stack ◽  
High Integrity

ABSTRACTHigh integrity SiO2/Al2O3 gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistors. The SiO2 film formed on GaN by the microwave-excited plasma enhanced chemical vapor deposition (MW-PECVD) exhibits good properties compared that by the LP (Low Pressure)-CVD. Then, by incorporating the advantages of both of SiO2 with a high insulating and Al2O3 with good interface characteristics, the SiO2/Al2O3 gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-to-breakdown by applying 3-nm Al2O3. The SiO2/Al2O3 gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET) and the HFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm2/Vs.

Low Temperature Preparation of Gallium Nitride Thin Films

1992 ◽  
Vol 242 ◽  
Author(s):  
Roy G. Gordon ◽  
David M. Hoffman ◽  
Umar Riaz
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Transmission Electron ◽  
Low Temperature Preparation ◽  
Pressure Chemical ◽  
Substrate Temperatures ◽  
Temperature Preparation

ABSTRACTGallium nitride thin films were prepared by atmospheric pressure chemical vapor deposition from hexakis(dimethylamido)digallium, Ga2(NMe2)6, and ammonia precursors at substrate temperatures of 100–400 °C with growth rates up to 1000 Å/min. The films were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry and forward recoil spectrometry. The N/Ga ratio varied from 1.05 for films deposited at 400 °C to 1.5 at 100 °C. The hydrogen concentration increased from 10 atom % for films deposited at 400 °C to 24 atom % at 100 °C. Films deposited at 100 °C were amorphous but films deposited at higher temperatures were polycrystalline. Bandgaps of the films varied from 3.8 eV for films deposited at 400 °C to 4.2 eV at 100 °C.

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

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