Properties of Patterned Gallium Arsenide on Silicon

1988 ◽  
Vol 116 ◽  
Author(s):  
R.J. Matyi ◽  
H. Shichijo ◽  
T.S. Kim ◽  
H.L. Tsai
Keyword(s):  
Single Crystal ◽  
Hall Mobility ◽  
Defect Structure ◽  
Specific Growth ◽  
Feature Size ◽  
Mbe Growth ◽  
Gaas Mesfet ◽  
Mos Devices ◽  
Convenient Means ◽  
Crystal Gaas

AbstractThe growth of GaAs on Si by MBE through openings in an oxide or nitride represents a convenient means for achieving monolithic GaAs/Si integration. We have examined a number of the materials growth and processing issues that must be resolved in order to achieve this goal. Some of the specific areas that have been investigated are (a) the effect of trench etching on the morphology of the patterned GaAs; (b) the dependence of patterned feature size on Hall mobility in both as-grown and postgrowth annealed samples; (c) the effect of annealing on the defect structure in the transition region from single crystal GaAs to polycrystalline growth; (d) the dependence of GaAs MESFET performance on proximity to the polycrystal transition; and (e) the performance of Si MOS devices following the GaAs MBE growth. Specific growth and processing issues concerning the integration of GaAs and Si device functions have also been examined.

scholarly journals MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates

2021 ◽  
Vol 118 (9) ◽  
pp. 092101
Author(s):  
Kevin Lee ◽  
Ryan Page ◽  
Vladimir Protasenko ◽  
Leo J. Schowalter ◽  
Masato Toita ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mbe Growth ◽  
Donor Doping

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1998 ◽  
Vol 537 ◽  
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

AbstractThe epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Thermal Oxidation of a Single-Crystal GaAs Surface Treated in Sulfur Vapor

2021 ◽  
Vol 57 (7) ◽  
pp. 663-668
Author(s):  
I. Ya. Mittova ◽  
B. V. Sladkopevtsev ◽  
A. I. Dontsov ◽  
Yu. V. Syrov ◽  
A. S. Kovaleva ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Oxidation ◽  
Gaas Surface ◽  
Sulfur Vapor ◽  
Crystal Gaas

Ribbon Growth of Single Crystal GaAs for Solar Cell Application.

1981 ◽  
Author(s):  
Theresa A. Gould ◽  
Raymond G. Seidensticker ◽  
Robert Mazelsky
Keyword(s):  
Solar Cell ◽  
Single Crystal ◽  
Solar Cell Application ◽  
Crystal Gaas ◽  
Ribbon Growth

Electronic Defect Structure of Single-Crystal ThO2by Thermoluminescence

1971 ◽  
Vol 4 (8) ◽  
pp. 2701-2724 ◽  
Author(s):  
Elward T. Rodine ◽  
Peter L. Land
Keyword(s):  
Single Crystal ◽  
Defect Structure ◽  
Electronic Defect

Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

2001 ◽  
Vol 89 (11) ◽  
pp. 6751-6753 ◽  
Author(s):  
Stephan Kreuzer ◽  
Werner Wegscheider ◽  
Dieter Weiss
Keyword(s):  
Single Crystal ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Crystal Gaas

Defect structure of highly Zn-doped LiNbO3 single crystal revealed by extended x-ray absorption spectra

2008 ◽  
Vol 92 (16) ◽  
pp. 161902 ◽  
Author(s):  
P.-C. Tsai ◽  
M.-L. Sun ◽  
C.-T. Chia ◽  
H.-F. Lu ◽  
S.-H. Lin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Absorption Spectra ◽  
Defect Structure ◽  
X Ray ◽  
X Ray Absorption

Epitaxy of Nb3 Sn Films on Sapphire

1984 ◽  
Vol 37 ◽  
Author(s):  
A. F. Marshall ◽  
F. Hellman ◽  
B. Oh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Domain Structure ◽  
High Temperatures ◽  
Defect Structure ◽  
Epitaxial Relationship ◽  
Crystal Matrix ◽  
Transmission Electron

AbstractFilms of Nb3Sn vapor deposited at low rates and high temperatures on (1102) sapphire form an epitaxial <100> single crystal matrix with a domain structure of misoriented regions bounded by low-angle dislocation boundaries. Nucleation of other orientations at the interface result in a highly oriented but polycrystalline film through approximately the first thousand Angstroms of film thickness. After this point random orientations become overgrown by epitaxial <100> regions. At slightly lower temperatures many small <100> grains with a second epitaxial relationship also nucleate at the interface. These rotated grains persist through greater thicknesses than random orientations. The misorientation defect structure of the single crystal matrix is analyzed by transmission electron microscopy.

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