Electronic Defect Structure of Single-Crystal ThO2by Thermoluminescence

1971 ◽  
Vol 4 (8) ◽  
pp. 2701-2724 ◽  
Author(s):  
Elward T. Rodine ◽  
Peter L. Land
1994 ◽  
Vol 39-40 ◽  
pp. 99-102
Author(s):  
J. Molenda ◽  
A. Stoklosa ◽  
Tadeusz Bak

2008 ◽  
Vol 92 (16) ◽  
pp. 161902 ◽  
Author(s):  
P.-C. Tsai ◽  
M.-L. Sun ◽  
C.-T. Chia ◽  
H.-F. Lu ◽  
S.-H. Lin ◽  
...  

1984 ◽  
Vol 37 ◽  
Author(s):  
A. F. Marshall ◽  
F. Hellman ◽  
B. Oh

AbstractFilms of Nb3Sn vapor deposited at low rates and high temperatures on (1102) sapphire form an epitaxial <100> single crystal matrix with a domain structure of misoriented regions bounded by low-angle dislocation boundaries. Nucleation of other orientations at the interface result in a highly oriented but polycrystalline film through approximately the first thousand Angstroms of film thickness. After this point random orientations become overgrown by epitaxial <100> regions. At slightly lower temperatures many small <100> grains with a second epitaxial relationship also nucleate at the interface. These rotated grains persist through greater thicknesses than random orientations. The misorientation defect structure of the single crystal matrix is analyzed by transmission electron microscopy.


1989 ◽  
Vol 65 (12) ◽  
pp. 4815-4817 ◽  
Author(s):  
P. K. Khowash ◽  
D. E. Ellis

1994 ◽  
Vol 9 (8) ◽  
pp. 2096-2101 ◽  
Author(s):  
Q.H. Zhao ◽  
J. Wu ◽  
A.K. Chaddha ◽  
H.S. Chen ◽  
J.D. Parsons ◽  
...  

The defects and crystallinity of as-grown and annealed TiCx (grown by the high-pressure float-zone) were examined by TEM and double crystal x-ray rocking curves. Three types of subboundaries and planar defects within subgrains were observed in as-grown TiCx. Subboundaries are classified by structure as (i) wide-extended, fault-like defects (WEFLD's), (ii) edge dislocation arrays, and (iii) dislocation networks. Planar defects were observed at dislocation nodes of subboundaries and also within subgrains; this is the first reported observation of planar defects within TiCx subgrains. The misorientation and/or density of subgrains in TiCx was reduced significantly by annealing at 2300 °C in contact with graphite.


1990 ◽  
Vol 5 (4) ◽  
pp. 704-716 ◽  
Author(s):  
R. Ramesh ◽  
D. M. Hwang ◽  
J. B. Barner ◽  
L. Nazar ◽  
T. S. Ravi ◽  
...  

Structural defects in thin films of nominal composition YBa2Cu3O7 (123) grown on single crystal MgO have been characterized. The main types of stacking defects correspond to the cationic stoichiometries of “248”, “247”, and “224”. Several types of edge dislocations have been observed. Due to the frequent changes in the stacking sequence, antiphase boundaries are created to accommodate the misfit across regions in which the repeat sequence is not identical. The films exhibit a mosaic microstructure due to the formation of grain boundaries in the a-b plane.


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