An Optically Detected Magnetic Resonance Study of Recombination Mechanisms in Polythiophene

1987 ◽  
Vol 109 ◽  
Author(s):  
B. C. Hess ◽  
J. Shinar ◽  
Z. Vardeny ◽  
E. Ehrenfreund ◽  
F. Wudl
Keyword(s):  
Magnetic Resonance ◽  
Radiative Recombination ◽  
Magnetic Resonance Study ◽  
Photoluminescence Band ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

ABSTRACTFrom detailed optically detected magnetic resonance measurements in polythiophene, we show that the g=2.003 signal is luminescence enhancing, and that the signal comes from a broad photoluminescence band peaking near 1.65 eV. This band is tentatively assigned to Phe radiative recombination of polarons, with lifetimes between 10-8 and 5×10-5sec.

Optically detected magnetic resonance study of SiC:Ti

1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance of Sulfur Doped Gallium Phosphide

1989 ◽  
Vol 163 ◽  
Author(s):  
K. L. Brower
Keyword(s):  
Magnetic Resonance ◽  
Valence Band ◽  
Radiative Recombination ◽  
Gallium Phosphide ◽  
Free Electrons ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Lorentzian Lineshape

AbstractAn isotropic optically detected magnetic resonance (ODMR) having a Lorentzian lineshape at g - 2.050 ± 0.003 and linewidth (FWHM) of 67.3 mT is observed in GaP doped with 6 - 9 × 1017 S/cm3. The ODMR at g - 2.050 is believed to arise from free electrons (or holes) in the conduction (valence) band. This ODMR is completely quenched due to non-radiative recombination in the vicinity of g - 1.99.

Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part I

1982 ◽  
Vol 46 (5) ◽  
pp. 473-500 ◽  
Author(s):  
S. Depinna ◽  
B. C. Cavenett ◽  
I. G. Austin ◽  
T. M. Searle ◽  
M. J. Thompson ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

2020 ◽  
Vol 1004 ◽  
pp. 343-348
Author(s):  
Yuichi Yamazaki ◽  
Yoji Chiba ◽  
Shin Ichiro Sato ◽  
Takahiro Makino ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Magnetic Resonance ◽  
Three Dimensional ◽  
Magnetic Resonance Study ◽  
Mapping Analysis ◽  
Optically Detected Magnetic Resonance ◽  
Ion Proton ◽  
Pl Mapping ◽  
Optically Detected

We demonstrated optically detected magnetic resonance (ODMR) measurements using three-dimensional (3D) arrayed silicon vacancies (VSis) in in-plane SiC pn diodes. Proton beam writing successfully created 3D arrayed VSis using different ion (proton) energies. The results of PL mapping analysis indicate that the features of luminescent spot such as size and depth can be estimated by a Monte Carlo simulation (SRIM). This suggests that diagnosis at any locations in SiC devices can be realized using VSi quantum sensors. Luminescent spots with different depth ranging 4-60 μm showed similar ODMR spectra including its contrast, which means that a similar sensor sensitivity is expected. The results suggest that 3D arrayed VSi can act as quantum sensor elements with uniform sensitivity in SiC devices.

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