Electrochemical Fabrication of InSb Nanowires using Porous Alumina Membrane and their Characterization

2008 ◽  
Vol 1080 ◽  
Author(s):  
Muhammad Ibrahim Khan ◽  
Xu Wang ◽  
Krassimir N. Bozhilov ◽  
Cengiz S. Ozkan
Keyword(s):  
Electron Microscopy ◽  
Porous Alumina ◽  
Growth Direction ◽  
Anodic Alumina ◽  
Alumina Membrane ◽  
Alumina Membranes ◽  
Transmission Electron ◽  
Dependent Behavior ◽  
Conductivity Increase ◽  
Insb Nanowires

ABSTRACTAmong various ways to produce nanowires; anodic alumina membrane (AAM) based synthesis has constantly received much attention because AAM possess a uniform and parallel porous structure which makes them an ideal template material for creating highly ordered nanostructures. In this paper we report fabrication of InSb nanowire arrays with diameter of 200 nm and 30 nm by direct current electrodeposition inside the nanochannels of anodic alumina membranes without subsequent annealing. The nanowires have four major growth direction, [220] being the most dominant with structure defects such as twins. The transmission electron microscopy (TEM) and scanning electron microscopy (SEM) results demonstrate that these InSb nanowires are uniform with diameters about 200 nm and 30 nm, corresponding to the pore diameter of the AAMs. The nanowires also conduct almost no current in the dark, but when hit with light, they conduct 10,000 times more current. This photoconduction property could lead to a variety of tiny optoelectronic devices potentially useful in future generations of nanoelectronics and chemical sensors. The light-induced conductivity increase and the temperature dependent behavior of the nanowires are also reported.

scholarly journals Templated Fabrication of InSb Nanowires for Nanoelectronics

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
M. Ibrahim Khan ◽  
Xu Wang ◽  
Krassimir N. Bozhilov ◽  
Cengiz S. Ozkan
Keyword(s):  
Electron Microscopy ◽  
Pore Diameter ◽  
Anodic Alumina ◽  
Nanowire Arrays ◽  
Alumina Membrane ◽  
Structure Defects ◽  
Alumina Membranes ◽  
Transmission Electron ◽  
Ordered Nanostructures ◽  
Insb Nanowires

Among various ways to produce nanowires, anodic alumina membrane- (AAM-) based synthesis has constantly received much attention, because AAM has a uniform and parallel porous nanostructure which makes it an ideal template material for fabricating highly ordered nanostructures. In this paper, we report fabrication of InSb nanowire arrays with diameter of 200 nm and 30 nm by direct current electrodeposition inside the nanochannels of anodic alumina membranes without subsequent annealing. The nanowires have four major growth directions, (220) being the most dominant with structure defects such as twins. The transmission electron microscopy (TEM) and scanning electron microscopy (SEM) results demonstrate that these InSb nanowires are uniform with diameters about 200 nm and 30 nm, corresponding to the pore diameter of the AAMs. The I-V measurement of a single nanowire is also reported with encouraging preliminary results.

SYNTHESIS OF In2O3 NANOWIRES ENHANCED BY ANODIC ALUMINA MEMBRANE

2006 ◽  
Vol 05 (04n05) ◽  
pp. 479-485
Author(s):  
C. W. LAI ◽  
X. Y. ZHANG ◽  
H. C. ONG ◽  
J. Y. DAI ◽  
H. L. W. CHAN
Keyword(s):  
Electron Microscopy ◽  
Large Scale ◽  
Anodic Alumina ◽  
X Ray Diffraction ◽  
Alumina Membrane ◽  
Thermal Evaporation Method ◽  
Single Crystalline ◽  
X Ray ◽  
Alumina Membranes ◽  
Transmission Electron

Large-scale single crystalline In 2 O 3 nanowires were successfully synthesized on anodic alumina membranes by a simple thermal evaporation method at 570°C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy studies revealed the formation of single crystalline In 2 O 3 nanowires with diameters of 50–100 nm and lengths of up to a few hundreds of micrometers. Cathodeluminescence study revealed existence of oxygen vacancies evidenced by a strong and broad emission at 470 nm with a shoulder at 400 nm. The growth mechanism of the nanostructures is also discussed.

scholarly journals Study on the Influence of Porous Anodic Alumina Membrane on Separation of Hydrogen and Methane

2013 ◽  
Vol 652-654 ◽  
pp. 362-366
Author(s):  
Qi Peng Yang ◽  
Xue Bo Zhao ◽  
Xiu Lin Wang
Keyword(s):  
Electron Microscopy ◽  
Anodic Alumina ◽  
Porous Anodic Alumina ◽  
Anodic Alumina Membrane ◽  
Alumina Membrane ◽  
Separation Index ◽  
Alumina Membranes ◽  
Different Thickness ◽  
Microscopy Images ◽  
Scanning Electron

Hydrogen and methane have been regarded as the main energy for future. In recent years, membrane technology has developed to be an attractive technology to separate them. In this paper, porous anodic alumina membranes at different thickness were prepared for separation of hydrogen and methane. The thickness varied from about 77 to 250 μm, moreover, the SEM (Scanning Electron Microscopy) images show a good linear relationship between the thickness (y) and anodizing time (x), with the fitting being y = 22.56x - 36.082. Gas permeance and separation index for hydrogen and methane were measured at different conditions, such as thickness and temperature. With the thickness increased, the permeances of two gases were decreased quickly but separation index vice versa. In this research, the actual separation index changed from 1.9 to 3.2.

Control of Morphology and Growth Direction of Gallium Nitride Nanostructures

2003 ◽  
Vol 789 ◽  
Author(s):  
Seung Yong Bae ◽  
Hee Won Seo ◽  
Jeunghee Park
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Large Scale ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Oxide Mixture ◽  
Temperature Range ◽  
Transmission Electron

ABSTRACTVarious shaped single-crystalline gallium nitride (GaN) nanostructures were produced by chemical vapor deposition method in the temperature range of 900–1200 °C. Scanning electron microscopy, transmission electron microscopy, electron diffraction, x-ray diffraction, electron energy loss spectroscopy, Raman spectroscopy, and photoluminescence were used to investigate the structural and optical properties of the GaN nanostructures. We controlled the GaN nanostructures by the catalyst and temperature. The cylindrical and triangular shaped nanowires were synthesized using iron and gold nanoparticles as catalysts, respectively, in the temperature range of 900 – 1000 °C. We synthesized the nanobelts, nanosaws, and porous nanowires using gallium source/ boron oxide mixture. When the temperature of source was 1100 °C, the nanobelts having a triangle tip were grown. At the temperature higher up to 1200 °C the nanosaws and porous nanowires were formed with a large scale. The cylindrical nanowires have random growth direction, while the triangular nanowires have uniform growth direction [010]. The growth direction of the nanobelts is perpendicular to the [010]. Interestingly, the nanosaws and porous nanowires exhibit the same growth direction [011]. The shift of Raman, XRD, and PL bands from those of bulk was correlated with the strains of the GaN nanostructures.

Size dependent behavior of Fe3O4crystals during electrochemical (de)lithiation: an in situ X-ray diffraction, ex situ X-ray absorption spectroscopy, transmission electron microscopy and theoretical investigation

2017 ◽  
Vol 19 (31) ◽  
pp. 20867-20880 ◽  
Author(s):  
David C. Bock ◽  
Christopher J. Pelliccione ◽  
Wei Zhang ◽  
Janis Timoshenko ◽  
K. W. Knehr ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Size Dependent ◽  
Transmission Electron ◽  
Dependent Behavior ◽  
X Ray Absorption

Crystal and atomic structural changes of Fe3O4upon electrochemical (de)lithiation were determined.

scholarly journals Energetic Films Realized by Encapsulating Copper Azide in Silicon-Based Carbon Nanotube Arrays with Higher Electrostatic Safety

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 575 ◽  
Author(s):  
Xuwen Liu ◽  
Yan Hu ◽  
Hai Wei ◽  
Bingwen Chen ◽  
Yinghua Ye ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Porous Alumina ◽  
Chemical Vapor ◽  
Exothermic Peak ◽  
Alumina Film ◽  
Scanning Calorimetry ◽  
Micro Electro Mechanical Systems ◽  
Transmission Electron ◽  
Anodic Oxidation Method ◽  
Silicon Based

Since copper azide (Cu(N3)2) has high electrostatic sensitivity and is difficult to be practically applied, silicon-based Cu(N3)2@carbon nanotubes (CNTs) composite energetic films with higher electrostatic safety were fabricated, which can be compatible with micro-electro mechanical systems (MEMS). First, a silicon-based porous alumina film was prepared by a modified two-step anodic oxidation method. Next, CNTs were grown in pores of the silicon-based porous alumina film by chemical vapor deposition. Then, copper nanoparticles were deposited in CNTs by electrochemical deposition and oxidized to Cu(N3)2 by gaseous hydrogen azide. The morphology and composition of the prepared silicon-based Cu(N3)2@CNTs energetic films were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD), respectively. The electrostatic sensitivity of the composite energetic film was tested by the Bruceton method. The thermal decomposition kinetics of the composite energetic films were studied by differential scanning calorimetry (DSC). The results show that the exothermic peak of the silicon-based Cu(N3)2@CNTs composite energetic film is at the temperature of 210.95 °C, its electrostatic sensitivity is significantly less than that of Cu(N3)2 and its 50% ignition energy is about 4.0 mJ. The energetic film shows good electric explosion characteristics and is successfully ignited by laser.

Microstructures and Growth Characteristics of Self-Assembled InAs/GaAs Quantum Dots Investigated by Transmission Electron Microscopy

2007 ◽  
Vol 26-28 ◽  
pp. 1207-1210
Author(s):  
Hyung Seok Kim ◽  
Ju Hyung Suh ◽  
Chan Gyung Park ◽  
Sang Jun Lee ◽  
Sam Kyu Noh ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Chemical Potential ◽  
Early Stage ◽  
Compressive Strain ◽  
Potential Gradient ◽  
Growth Direction ◽  
Transmission Electron ◽  
Self Assembled

The microstructure and strain characteristics of self-assembled InAs/GaAs quantum dots (QDs) were studied by using transmission electron microscopy. Compressive strain was induced to uncapped QDs from GaAs substrate and the misfit strain largely increased after the deposition of GaAs cap layer. Tensile strain outside QD was extended along the vertical growth direction; up to 15 nm above the wetting layer. Vertically nonaligned and aligned stacked QDs were grown by adjusting the thickness of GaAs spacer layers. The QDs with a lens-shaped morphology were formed in the early stage of growth, and their apex was flattened by the out-diffusion of In atoms upon GaAs capping. However, aligned QDs maintained their lens-shaped structure with round apex after capping. It is believed that their apex did not flatten because the chemical potential gradient of In was relatively low due to the adjacent InAs QD layers.

Growth of epitaxial ZnO films on Si(111)

2002 ◽  
Vol 722 ◽  
Author(s):  
Chunming Jin ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transparent Conducting Oxide ◽  
Deposition Process ◽  
Growth Direction ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

AbstractEpitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 11 0]||AlN[2 11 0]||Si[0 11] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.

SiC NWs Grown on Silicon Substrate Using Fe as Catalyst

2014 ◽  
Vol 806 ◽  
pp. 39-42
Author(s):  
Paola Lagonegro ◽  
Matteo Bosi ◽  
Giovanni Attolini ◽  
Marco Negri ◽  
Sathish Chander Dhanabalan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Temperature ◽  
Silicon Substrate ◽  
Growth Direction ◽  
Carrier Gas ◽  
Sic Nanowires ◽  
Transmission Electron

We report on the synthesis of SiC nanowires (NWs) using iron as catalyst. The NWs were grown on silicon substrate by vapour-liquid-solid (VLS) mechanism with propane and silane as precursors, both 3% diluted in hydrogen, and hydrogen as carrier gas. The growth temperature was 1250°C, to reach the eutectic values of the Si-Fe alloy and to permit the VLS mechanism. The as-grown SiC nanowires were characterized by scanning and transmission electron microscopy. The nanowires are from 30 to 100 nm in diameter and several μm in length, with <111> growth direction.

Sign in / Sign up

Export Citation Format

Share Document