Superconducting Interconnections in Future High Performance Systems

1987 ◽  
Vol 108 ◽  
Author(s):  
R. C. Frye
Keyword(s):  
Critical Current ◽  
High Speed ◽  
High Performance ◽  
Electronic Systems ◽  
Maximum Current Density ◽  
Maximum Current ◽  
High Performance Systems ◽  
Current Densities ◽  
Very High ◽  
Scaling Rule

ABSTRACTNew, high temperature superconducting materials could eventually be used for interconnections in electronic systems. Such interconnections would undoubtedly cost more to implement than conventional ones, so the most likely applications would be for complex, high-speed systems that could benefit from the performance advantages of a resistance-free interconnecting medium. The problem with conventional conductors in these systems is that the resistance of wires increases quadratically as dimensions are scaled down. The most important advantage offered by superconductors is that they are not linked to this scaling rule. Their principal limitation is the maximum current density that they will support and this determines the range of applications for which they are superior to conventional conductors. An analysis will be presented which examines the relative advantages of superconductors for different critical current densities, wire dimensions and system sizes.If their critical current densities are adequate, and if they can statisfy a number of processing criteria, then superconductors could find useful applications in a number of high performance electronic systems. The most likely applications will be those demanding very high interconnection densities. Several of these systems will be discussed.

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

scholarly journals Bulk YBCO with discontinuous irradiation defects: Bose-glass behaviour and very high critical current densities

2008 ◽  
Vol 97 ◽  
pp. 012080 ◽  
Author(s):  
G Fuchs ◽  
K Nenkov ◽  
G Krabbes ◽  
L Shlyk ◽  
R Weinstein ◽  
...  
Keyword(s):  
Critical Current ◽  
Bulk Ybco ◽  
Bose Glass ◽  
Current Densities ◽  
Very High

High Performance Materials and Devices for High-Speed Electronic Systems

10.1142/11156 ◽  
2018 ◽  
Author(s):  
F Jain ◽  
C Broadbridge ◽  
H Tang ◽  
M Gherasimova
Keyword(s):  
High Speed ◽  
High Performance ◽  
Electronic Systems

III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors

MRS Bulletin ◽  
2004 ◽  
Vol 29 (8) ◽  
pp. 552-561 ◽  
Author(s):  
Amit Goyal ◽  
M. Parans Paranthaman ◽  
U. Schoop
Keyword(s):  
Critical Current ◽  
High Performance ◽  
Thermomechanical Processing ◽  
Cost Effective ◽  
Epitaxial Films ◽  
Buffer Layers ◽  
Ybco Films ◽  
Biaxial Texture ◽  
Ybco Superconductors ◽  
Current Densities

AbstractThis article provides an overview of the fabrication of epitaxial, biaxially aligned buffer layers on rolling-assisted biaxially textured substrates (RABiTS) as templates for YBCO films carrying high critical current densities.The RABiTS technique uses standard thermomechanical processing to obtain long lengths of flexible, biaxially oriented substrates with smooth surfaces.The strong biaxial texture of the metal is conferred to the superconductor by the deposition of intermediate metal and/or oxide layers that serve both as a chemical and a structural buffer.Epitaxial YBCO films with critical current densities exceeding 3 106A/cm2at 77K in self-field have been grown on RABiTS using a variety of techniques and demonstrate magnetic-field-dependent critical current values that are similar to those of epitaxial films on single-crystal ceramic substrates.The RABiTS architecture most commonly used consists of a CeO2 (sputtered)/YSZ (sputtered)/Y203 (e-beam)/Ni-W alloy.The desired texture of the base metal has been achieved in 100 m lengths and 10cm widths.Scaleable and cost-effective techniques are also being pursued to deposit the epitaxial multilayers.The results discussed here demonstrate that this technique is a viable route for the fabrication of long lengths of high-critical-current-density wire capable of carrying high currents in magnetic fields and at temperatures accessible by cooling with relatively inexpensive liquid nitrogen (up through the 77K range).

RECENT ADVANCES IN BiCMOS TECHNOLOGY

1990 ◽  
Vol 01 (02) ◽  
pp. 153-167
Author(s):  
TZU-YIN CHIU ◽  
PING K. KO
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Technology Evolution ◽  
Recent Advances ◽  
Bicmos Technology ◽  
Device Structures ◽  
High Performance Systems ◽  
Technology Trend

The merits of high speed bipolar and low power VLSI CMOS are combined in BiCMOS technology. Designers are exploiting additional dimensions of flexibility and are implementing aggressive high performance systems not achievable before. Various approaches to BiCMOS integration, spanning from a single mask addition to sophisticated fully self-aligned device structures, are reviewed in this article. The philosophies behind the technology evolution in the last five years are discussed. We have also ventured to extrapolate future BiCMOS technology trend and applications.

Effective Friction Control for Optimization of High Speed Rail Operations

2010 ◽  
Author(s):  
Donald T. Eadie ◽  
Kevin Oldknow ◽  
Yasushi Oka ◽  
Ron Hui ◽  
Peter Klauser ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
High Reliability ◽  
Ride Quality ◽  
Oil And Grease ◽  
High Speed Rail ◽  
Wear Rates ◽  
Friction Control ◽  
Very High ◽  
Effective Friction

Expected growth of High Speed Rail (HSR) in North America will in many instances involve operation on existing infrastructure, shared with other traffic. This will pose many challenges, not least of which will be wheel and rail wear, and ride quality. This paper addresses how effective friction control can be employed to mitigate these factors and provide an important tool to the designers of new systems. Case studies describe successful use of train mounted solid stick LCF flange lubrication on high speed trains in East Asia and Japan. In each case, higher speed train operation has involved operation on areas of track with greater curvature than usual on dedicated high speed track. Appropriately designed LCF systems provide an inherently very high level of reliability and very low flange wear rates. Use of dry thin film lubricant technology has advantages over use of liquid lubricants (oil and grease) which can experience splash and fling off at high train speeds. Train mounted solid sticks provide greater consistency / reliability and ease of maintenance compared with wayside gauge face lubrication. Complementing practical field experience, modeling studies are presented which show the potential of high performance flange lubrication to allow for additional flexibility in designing wheel profiles for high speed rail. The ideal profile will balance vehicle stability (benefiting from lower conicity) and curving performance (benefiting from higher conicity). In a high speed train with long wheel base and high suspension stiffness operating in areas with significant curvature, finding an appropriate compromise becomes even more challenging than usual. Controlling flange wear at low rates with highly effective solid stick lubrication offers the opportunity to use wheel profiles providing lower effective conicity and therefore better ride quality, without compromising wheel life. This approach will be practical only in a scenario where a very high reliability wheel / rail lubrication system is employed.

Large area YBCO films on polycrystalline substrates with very high critical current densities

1999 ◽  
Vol 9 (2) ◽  
pp. 2244-2247 ◽  
Author(s):  
M. Bauer ◽  
R. Semerad ◽  
H. Kinder ◽  
J. Wiesmann ◽  
J. Dzick ◽  
...  
Keyword(s):  
Critical Current ◽  
Large Area ◽  
Ybco Films ◽  
Current Densities ◽  
Very High
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