Cross-Sectional TEM Study of Three-Dimensional MOS Devices

1987 ◽  
Vol 107 ◽  
Author(s):  
Kyung-Ho Park ◽  
T. Sasaki ◽  
T. Iwai ◽  
M. Hasegawa ◽  
N. Sasaki
Keyword(s):  
Electron Microscopy ◽  
Three Dimensional ◽  
Gate Oxide ◽  
Crystal Defects ◽  
Interface Roughness ◽  
Bulk Silicon ◽  
Cross Sectional ◽  
Mos Devices ◽  
Transmission Electron ◽  
20 Nm

AbstractThis paper describes cross-sectional transmission electron microscopy (TEM) observation on finished 3-D MOS devices, fabricated with a laser-recrystallized SOI. The laser-recrystallized SOI contained crystal defects such as micro-twinning, grain boundaries and dislocations. It is also clearly shown that the interface roughness between the gate oxide and SOI is as much as 20 nm height, in where the interface is very smooth between the gate oxide and bulk silicon.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

Enamel Crystal Shape: History of an Idea

1987 ◽  
Vol 1 (2) ◽  
pp. 322-329 ◽  
Author(s):  
H. Warshawsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Three Dimensional ◽  
Unit Cell ◽  
Cross Sectional ◽  
Transmission Electron ◽  
History Of ◽  
Sectional Shape ◽  
Imaging Plane

The purpose of this paper is to review evidence which casts doubt on the interpretation universally applied to hexagonal images seen in sectioned enamel. The evidence is based on two possible models to explain the hexagonal profiles seen in mammalian enamel with transmission electron microscopy. The "hexagonal ribbon" model proposes that hexagonal profiles are true cross-sections of elongated hexagonal ribbons. The "rectangular ribbon" model proposes that hexagonal profiles are caused by three-dimensional segments that are parallelepipeds contained in the Epon section. Since shadow projections of such rectangular segments give angles that are inconsistent with the hexagonal unit cell, a model based on ribbons with rhomboidal cut ends and angles of 60 and 120° is proposed. The "rhomboidal ribbon" model projects shadows with angles that are predicted by the unit cell. It is suggested that segments of such crystallites in section project as opaque hexagons on the imaging plane in routine transmission electron microscopy. Morphological observations on crystallites in sections - together with predictions from the hexagonal, rectangular, and rhomboidal ribbon models - indicate that crystallites in rat incisor enamel are flat ribbons with rhomboidal cross-sectional shape. Hexagonal images in electron micrographs of thin-sectioned enamel can result from rhomboidal-ended, parallelepiped-shaped segments of these crystallites projected and viewed as two-dimensional shadows.

scholarly journals Oblique Stacking of Three-Dimensional Dome Islands in Ge/Si Multilayers

2000 ◽  
Vol 648 ◽  
Author(s):  
P. Sutter ◽  
E. Sutter ◽  
L. Vescan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Three Dimensional ◽  
Surface Curvature ◽  
Surface Strain ◽  
Complex Interplay ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Planar Substrate ◽  
Inherent Tendency

AbstractThe organization of Ge ‘dome’ islands in Ge/Si multilayers has been investigated by cross-sectional transmission electron microscopy. Ge ‘domes’ are found to spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next. The formation of oblique island stacks is governed by a complex interplay of surface strain - generated by the already buried islands - and surface curvature - caused by the inherent tendency of large ‘domes’ to carve out material from the surrounding planar substrate.

Influence of Pre-Gate Cleaning ON Si/SiO2 Interface and Electrical Performance of Cmos Gate Oxide

2000 ◽  
Vol 654 ◽  
Author(s):  
X. Duan ◽  
K. Kisslinger ◽  
L. Mayes ◽  
S. Ruby ◽  
J. Barrett
Keyword(s):  
Electron Microscopy ◽  
Gate Dielectrics ◽  
Gate Oxide ◽  
Atomic Level ◽  
Electrical Performance ◽  
Interface Morphology ◽  
Gate Oxides ◽  
Mos Devices ◽  
Transmission Electron ◽  
The Impact

AbstractThe Si/SiO2 interface is attracting new interest as gate dielectrics in MOS devices become ultra thin. In this paper, the impact of pre-gate cleaning on the morphology of the Si/SiO2 interface and the electrical performance of CMOS gate oxides has been systematically investigated. Using the High-Resolution Transmission Electron Microscopy (HRTEM) technique, we observed the Si/SiO2 interface at an atomic level. We have found a direct experimental relationship between the pre-gate cleaning scheme, Si/SiO2 interface morphology, and the electrical properties of CMOS gate oxides. When the ratio of H2O2:NH4OH ≥ 1.45, the roughness of the Si/SiO2 interface was dramatically improved, which, in turn, increased the Charge-to-Breakdown to an ideal value.

Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate

1992 ◽  
Vol 263 ◽  
Author(s):  
W.K. Choo ◽  
I. Kim ◽  
J.Y. Lee ◽  
K.I. Cho ◽  
J.-L. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Critical Thickness ◽  
Solid Phase ◽  
Three Dimensional ◽  
Stacking Faults ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Initial Stage ◽  
Gaas Films ◽  
Phase Proceeds

ABSTRACTThe initial stage of solid phase epitaxial (SPE) growth of GaAs films on the vicinal Si (001) substrate was investigated by high resolution transmission electron microscopy (H-RTEM). Cross-sectional [110] and [110] HRTEM images show that the SPE growth of crystalline GaAs islands from the amorphous phase proceeds via the formation of three-dimensional islands at the initial stage and islands' size and spacing are not critically dependent on the substrate tilt direction. The average vertical and lateral dimensions of islands were found to be 9 nm and 14 nm respectively, and the average island spacing was 10 nm. Moreover, many internal stacking faults (and/or microtwins) and a few dislocations have been already formed at this initial stage of growth. In addition, the critical thickness for misfit dislocation formation is found to depend upon the islands' lateral dimensions as well as the heights.

Three Dimensional Characterization of Interfaces in Semiconductors by Scanning Electron Microscopy

1986 ◽  
Vol 69 ◽  
Author(s):  
David C. Joy ◽  
D. M. Maher ◽  
R C Farrow
Keyword(s):  
Electron Microscopy ◽  
Three Dimensional ◽  
Preparation Time ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Alternative Approach ◽  
Imaging Mode ◽  
Structural Characterizations ◽  
Scanning Electron

AbstractIn many semiconductor materials problems, structural characterizations must be achieved in both the lateral and vertical dimensions. Although a combination of cross-sectional and planar transmission electron microscopy can provide this information, the sample preparation time is demanding and only relatively small volumes of material are examined. We describe here an alternative approach in which the charge collection (‘CCM’) imaging mode of the scanning electron microscope (SEM) is used. It is shown that, by varying the incident electron beam energy, electricallly active defects at different positions beneath the entrance surface of the material can be imaged and their depth estimated.

Heteroepitaxy of diamond on c-BN: Growth mechanisms and defect characterization

1994 ◽  
Vol 9 (7) ◽  
pp. 1849-1865 ◽  
Author(s):  
Alberto Argoitia ◽  
John C. Angus ◽  
Jing S. Ma ◽  
Long Wang ◽  
Pirouz Pirouz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Cubic Boron Nitride ◽  
Three Dimensional ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Defect Characterization ◽  
Cross Sectional ◽  
Transmission Electron ◽  
High Resolution Tem

Diamond films grown on {100}, {111} boron-terminated, and nitrogen-terminated facets of cubic boron nitride (c-BN) single crystals were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The evolution of morphology and microstructure of the diamond films at different stages during the growth process were followed by SEM investigation. The results indicate that diamond growth proceeds by nucleation of oriented three-dimensional islands followed by their coalescence. Cross-sectional TEM specimens were prepared from thick (over 10 μm) continuous diamond films grown on {111} boron-terminated surfaces. Selected-area diffraction and high resolution TEM images show that the diamond film has a parallel orientation relationship with respect to the substrate. Characteristic defects, common to diamond films obtained by chemical vapor deposition on other substrates, are also discussed.

Effect of Oxygen Exposure and Deposition Environment on Thermal Stability of Ta Barriers To Cu Penetration.

1990 ◽  
Vol 203 ◽  
Author(s):  
N.A. Bojarczuk ◽  
L.A. Clevenger ◽  
K. Holloway ◽  
J.M.E. Harper ◽  
C. Cabral ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barrier ◽  
Structural Changes ◽  
Deposition Pressure ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Oxygen Contamination ◽  
Barrier Performance ◽  
Effect Of Oxygen ◽  
20 Nm

ABSTRACTThe effect of deposition pressure and controlled oxygen dosing on the diffusion barrier performance of thin film Ta to Cu penetration was investigated. In-situ resistivity, Auger compositional profiling, scanning electron microscopy and cross-sectional transmission electron microscopy were used to determine the electrical, chemical and structural changes that occur in Cu/Ta bilayers on Si upon heating. A 20 nm Ta barrier allowed the penetration of Cu at temperatures ranging from 320 to 630°C depending on processing conditions. Barrier failure temperature is dependent upon the deposition pressure and oxygen contamination at the Ta/Cu interface. This indicates the importance of understanding how deposition conditions affect diffusion barrier performance.

Evaluation of Anti-Phase-Boundaries in GaAs/Si Heterostructures by Transmission Electron Microscopy

1989 ◽  
Vol 148 ◽  
Author(s):  
O. Ueda ◽  
T. Soga ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Three Dimensional ◽  
Buffer Layers ◽  
Phase Boundaries ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Strained Layer Superlattices ◽  
And Behavior

ABSTRACTThe nature and behavior of anti-phase-boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP and GaAsP/GaAs strained layer superlattices as intermediate buffer layers, have been investigated by transmission electron microscopy. It has been found that anti-phasedomains are very complicated three dimensional polygons consisting of several sub-boundaries in different orientations. Self-annihilation of anti-phase-domains during crystal growth of GaAs on (001)just or (001)2°off Si substrates is directly observed for the first time through planview and cross-sectional observations. Based on these findings, a mechanism of annihilation of these domains is proposed.

Sign in / Sign up

Export Citation Format

Share Document