DX Center Analysis in Sn DOPED AlGaAs Layer of Double Heterostructures

1987 ◽  
Vol 104 ◽  
Author(s):  
M. Kaniewska ◽  
J. Kaniewski
Keyword(s):  
Thermal Activation ◽  
Lattice Relaxation ◽  
Electron Capture Cross Section ◽  
Final State ◽  
Al Content ◽  
Double Heterostructures ◽  
Algaas Layer ◽  
Large Lattice ◽  
Dx Center ◽  
Dlts Spectra

ABSTRACTCapacitance as well as photovoltage response methods have been used to analyse DX centers in the N–type AlGaAs:Sn layer of double heterostructures. DLTS spectra have revealed two deep traps. The first center (ΔE1 = 0.20eV) has been interpreted as the DX center related to Sn. In this paper, it is suggested that the second trap, with thermal activation energy equal to ΔE2 = 0.33eV, is also a DX center due to Sn, connected with another final state (the L minimum) of thermal processes. C-T characteristics and DLTS spectra have been compared with photovoltage spectra to find a correlation between the trap populations and Al content. The binding energy of the trap 2, as well as the temperature dependence of the electron capture cross-section, have been determined from measurements of the transition region width. Photoionization measurements confirm that there is large lattice relaxation when an electron is captured at the trap.

scholarly journals Lattice Relaxation of the DX Centers in Ga1−x Alx As and of the Pressure–Induced Deep Donors in GaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
M. F. Li ◽  
W. Shan ◽  
P. Y. Yu ◽  
W. L. Ransen ◽  
E. R. Weber ◽  
...  
Keyword(s):  
Deep Level ◽  
Lattice Relaxation ◽  
Transient Techniques ◽  
Large Lattice ◽  
Defect Energies ◽  
Deep Donor ◽  
Diamond Anvil ◽  
Dx Center ◽  
Capacitance Transient ◽  
Experimental Pressure

ABSTRACTDeep Level Transient Spectroscopies (DLTS) and capacitance transient techniques have been applied to GaAs:Si and to Ga1−xAlxAs:Te (x=0.35) under quasi-hydrostatic pressure using a diamond anvil cell. By substituting the experimental pressure coefficients of the defect energies into a model proposed by Li and Yu (Solid State Commun. 61, 13 (1987)) we concluded that both the DX center in the GaAlAs alloy and the pressure-induced deep donor (PIDD) in GaAs have large lattice relaxations associated with them.

scholarly journals Емкостная спектроскопия гетероэпитакиальных AlGaAs/GaAs p-i-n-структур

2020 ◽  
Vol 54 (10) ◽  
pp. 1072
Author(s):  
М.М. Соболев ◽  
Ф.Ю. Солдатенков
Keyword(s):  
Thermal Activation ◽  
Correlation Energy ◽  
Deep Level ◽  
Electron Capture Cross Section ◽  
Type Layer ◽  
Capacitance Voltage ◽  
Temperature Dependences ◽  
Carrier Trap ◽  
Dx Center ◽  
Transient Spectroscopy

Temperature dependences of capacitance-voltage (C−V) characteristics and deep-level spectra of the graded highvoltage AlxGa1−xAs p0 −i−n0 junction grown by liquid-phase epitaxy via autodoping with background impurities were investigated. The changes of the C−V characteristics at varied measurement temperature and optical illumination demonstrated that the p0-, i-,n0-type layers in the AlxGa1−xAs under study contain bistable DX centers. In spectra of deep-level transient spectroscopy (DLTS), measured at various bias voltages Vr and filling pulses Vf , a positive DLTS peak is observed for the n 0 -type layer with thermal activation energy Et = 280 meV and electron-capture cross-section σn = 3.17 · 10−14 cm2, which is unusual for a majority-carrier trap. This peak is related to the negatively charged state of the Se/Te donor impurity, which is a bistable DX center with negative correlation energy U.

scholarly journals The transformations of the EL6 deep level defect in n-GaAs: Is EL6 a DX-like center?

1998 ◽  
Vol 510 ◽  
Author(s):  
C.V. Reddy ◽  
S. Fung ◽  
C.D. Beling
Keyword(s):  
Deep Level ◽  
Lattice Relaxation ◽  
Persistent Photoconductivity ◽  
Charge Redistribution ◽  
Deep Level Defect ◽  
Native Defects ◽  
Large Lattice ◽  
Dx Center ◽  
Low Temperature Grown Gaas ◽  
Redistribution Effect

AbstractBased on the charge redistribution effect, as observed by the present authors, and the earlier reported large lattice relaxation and persistent photoconductivity phenomena associated with the EL6 defect seen in doped, undoped, semiinsulating(SI) and low temperature grown GaAs LT-GaAs), it is suggested that this defect be classified as a DX-center. A tentative unified atomic model is proposed for all the native defects EL2, EL3, EL5, and EL6 observed in GaAs.

STABILITY OF SI-DOPED AlGaAs/GaAs MODFET STRUCTURES DURING CONVENTIONAL FURNACE AND RAPID OPTICAL ANNEALING.

1985 ◽  
Vol 56 ◽  
Author(s):  
J. K. ABROKWAH ◽  
H. HIBBS ◽  
R. R. DANIELS ◽  
P. JOSLYN
Keyword(s):  
High Performance ◽  
The Self ◽  
Superlattice Structure ◽  
Annealing Conditions ◽  
Conventional Furnace ◽  
Algaas Layer ◽  
Si Doped ◽  
Dx Center ◽  
Superlattice Structures ◽  
The Stability

AbstractThe use of an AlGaAs/n-GaAs superlattice in place of the n-AlGaAs layer in MODFET devices reduces the light and temperature sensitivity of the threshold voltage. This paper considers the stability of Si doped superlattices under annealing conditions required for activation of the implant in the self-aligned gate MODFET fabrication process. Rapid optical annealing does not significantly degrade the superlattice structure. The DX center concentration in the superlattice structures is a factor of 30 less than measured in conventional MODFET structures. High performance MOOFET devices have been fabricated using the self-aligned gate process with rapid optical annealing.

scholarly journals Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 885 ◽  
Author(s):  
Yan Gu ◽  
Dongmei Chang ◽  
Haiyan Sun ◽  
Jicong Zhao ◽  
Guofeng Yang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Theoretical Study ◽  
Lattice Relaxation ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Two Dimensional ◽  
Drift Diffusion ◽  
High Electron Mobility ◽  
Al Content ◽  
Dimensional Electron Gas

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

DXcenter analysis in Sn‐doped AlGaAs layer of double heterostructures

1987 ◽  
Vol 62 (11) ◽  
pp. 4634-4636 ◽  
Author(s):  
J. Kaniewski ◽  
M. Kaniewska ◽  
K. Žďánský
Keyword(s):  
Double Heterostructures ◽  
Algaas Layer
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