DXcenter analysis in Sn‐doped AlGaAs layer of double heterostructures

1987 ◽  
Vol 62 (11) ◽  
pp. 4634-4636 ◽  
Author(s):  
J. Kaniewski ◽  
M. Kaniewska ◽  
K. Žďánský
Keyword(s):  
Double Heterostructures ◽  
Algaas Layer

DX Center Analysis in Sn DOPED AlGaAs Layer of Double Heterostructures

1987 ◽  
Vol 104 ◽  
Author(s):  
M. Kaniewska ◽  
J. Kaniewski
Keyword(s):  
Thermal Activation ◽  
Lattice Relaxation ◽  
Electron Capture Cross Section ◽  
Final State ◽  
Al Content ◽  
Double Heterostructures ◽  
Algaas Layer ◽  
Large Lattice ◽  
Dx Center ◽  
Dlts Spectra

ABSTRACTCapacitance as well as photovoltage response methods have been used to analyse DX centers in the N–type AlGaAs:Sn layer of double heterostructures. DLTS spectra have revealed two deep traps. The first center (ΔE1 = 0.20eV) has been interpreted as the DX center related to Sn. In this paper, it is suggested that the second trap, with thermal activation energy equal to ΔE2 = 0.33eV, is also a DX center due to Sn, connected with another final state (the L minimum) of thermal processes. C-T characteristics and DLTS spectra have been compared with photovoltage spectra to find a correlation between the trap populations and Al content. The binding energy of the trap 2, as well as the temperature dependence of the electron capture cross-section, have been determined from measurements of the transition region width. Photoionization measurements confirm that there is large lattice relaxation when an electron is captured at the trap.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Comparison of phase modulation of GaAs/AlGaAs double heterostructures

1987 ◽  
Vol 23 (25) ◽  
pp. 1391 ◽  
Author(s):  
J. Faist ◽  
F.K. Reinhart ◽  
D. Martin
Keyword(s):  
Phase Modulation ◽  
Double Heterostructures

Epitaxial lift-off CdTe/MgCdTe double heterostructures for thin-film and flexible solar cells applications

2021 ◽  
Vol 118 (18) ◽  
pp. 181101
Author(s):  
Jia Ding ◽  
Cheng-Ying Tsai ◽  
Zheng Ju ◽  
Yong-Hang Zhang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Double Heterostructures ◽  
Lift Off

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

1983 ◽  
Vol 43 (6) ◽  
pp. 569-571 ◽  
Author(s):  
C. W. Tu ◽  
S. R. Forrest ◽  
W. D. Johnston
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructures

Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stimulated Emission ◽  
Pump Light ◽  
Band Edge Emission ◽  
Emission Characteristics ◽  
Nitrogen Laser ◽  
Edge Emission ◽  
Edge Luminescence ◽  
Double Heterostructures

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

scholarly journals Electrical Properties of SbSI/Sb_2S_3 Single and Double Heterostructures

2013 ◽  
Vol 124 (5) ◽  
pp. 830-832 ◽  
Author(s):  
B. Toroń ◽  
M. Nowak ◽  
A. Grabowski ◽  
M. Kępińska
Keyword(s):  
Electrical Properties ◽  
Double Heterostructures

Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowth

1994 ◽  
Vol 65 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
S. R. D. Kalingamudali ◽  
A. C. Wismayer ◽  
R. C. Woods ◽  
J. S. Roberts
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Algaas Layer
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