In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. V. Hattangady ◽  
R. A. Rudder ◽  
G. G. Fountain ◽  
D. J. Vitkavage ◽  
R. J. Markunas
Keyword(s):  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
High Energy ◽  
Surface Cleaning ◽  
High Energy Electron ◽  
New Approach ◽  
Wet Chemistry ◽  
Plasma Treatments

We have demonstrated low temperature (300°C) Ge epitaxy on Ge(111) and on Si(100) substrates. Critical to this epitaxy has been the use of wet chemistry to produce controlled, thin oxides on the substrates prior to loading into the reactor and an in-situ 300°C hydrogen plasma treatment to remove those oxides from the semiconductor surfaces. Reflection high energy electron diffraction shows the plasma treatments to be effective in producing clean, well-ordered surfaces. This represents a new approach for in-situ cleaning of Ge(111) and Si(100) surfaces.

Surface Cleaning Prior to Formation of Si/SiO2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

1992 ◽  
Vol 259 ◽  
Author(s):  
H. H. Lamb ◽  
S. Kalem ◽  
S. Bedge ◽  
T. Yasuda ◽  
Y. Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Ex Situ ◽  
Dangling Bond ◽  
Remote Plasma ◽  
Carbon Contamination

ABSTRACTEx situ UV/O2 cleaning prior to SiO2 deposition by RPECVD results in an SiO2/Si interface with mid-gap Dit values 2-5 times higher than interfaces formed by in situ exposure of HF-etched wafers to plasma-generated atomic O. In situ exposures to plasma-generated atomic H and atomic O are each effective at removing carbon contamination acquired by the UV/O2 cleaned wafers during transfer and introduction to the RPECVD chamber. However, in situ exposure of the photochemical oxide layer to atomic O results in higher mid-gap Dit values, and in situ exposure to atomic H results in creation of dangling bond defects (Pb centers).

HgCdTe Surface Cleanup and Etch Using a Remote Hydrogen Plasma

1994 ◽  
Vol 299 ◽  
Author(s):  
Patricia B. Smith
Keyword(s):  
Atomic Force Microscopy ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Dielectric Interface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Device Structures

AbstractDry passivation of HgCdTe with ZnS or CdTe using physical or chemical vapor deposition can be improved by incorporating an in situ plasma cleanup of the HgCdTe surface prior to the deposition. Contamination at the HgCdTe/ dielectric interface from ambient oxide and hydrocarbon residues may lead to fixed charge in capacitor or diode device structures. In addition, the oxides of HgCdTe are known to be thermally unstable. Removal of the surface contamination layer is advantageous for producing a consistent and electrically reliable interface. We describe the interaction of a remotely generated H2 or H2/Ar plasma (2.45 GHz, 600W) with HgCdTe, using ex-situ and in-situ ellipsometry, and atomic force microscopy. This work represents the first effort to characterize a low damage HgCdTe surface cleanup process which is compatible with vacuum in-situ passivation.

Self-assembled Ge quantum dots on SiC substrates grown by UHV-CVD

2002 ◽  
Vol 742 ◽  
Author(s):  
C. Calmes ◽  
V. Le ◽  
D. Bouchier ◽  
S. E. Saddow ◽  
V. Yam ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Energy ◽  
Surface Cleaning ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
First Results ◽  
Ge Quantum Dots

AbstractWe report our first results using a ultra high vacuum chemical vapor deposition (UHV-CVD) system to form Ge quantum dots on off-axis SiC substrates. Pure SiH4 and hydrogen-diluted GeH4 were used as gas precursors. The SiC substrates were chemically cleaned using the modified RCA process and the SiO2 layer was removed in-situ under a low SiH4 flow rate at a temperature between 1030°C and 1080°C. The Ge quantum dots were grown at a temperature of 750°C. In-situ reflection high-energy electron diffraction (RHEED) was used to monitor the surface cleaning and the Ge quantum dot growth. Ex-situ scanning electron microscope and atomic force microscopy were used to confirm the presence of Ge dots. The observed dots are smaller (350 Å width and 100 Å height) than similar Ge dots grown on Si.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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