Magnetoreflectivity Study of Excitons in MBE Grown Zn1−xFex Se Crystals

1987 ◽  
Vol 102 ◽  
Author(s):  
X. Liu ◽  
A. Petrou ◽  
G. A. Prinz ◽  
B. T. Jonke ◽  
J. J. Krebs ◽  
...  

ABSTRACTWe present a magnetoreflectivity study of the excitons in MBE grown Zn1−xFexSe crystals for x=0.017, 0.027 and 0.043. The excitonic spinsplitting was studied as function of magnetic field in both the Faraday and Voigt geometries. The exchange integrals were determined from the conduction and valence band spin-splittings. The exciton spin-splitting was also studied as function of temperature. This study yielded the value of the energy spacing of the Fe++ states and also verified that Zn1−xFexSe is a Van Vleck paramagnet.

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3355-3359
Author(s):  
I. MIHUT ◽  
C. C. AGOSTA ◽  
C. H. MIELKE ◽  
M. TOKOMOTO

The magnetic breakdown effect can be seen by the growth of new frequencies in the quantum oscillations in clean metals as a function of magnetic field. We have studied the variation of the amplitudes in the quantum oscillations in the resistance (the Shubnikov-de Haas effect) as a function of angle in the quasi-two dimensional-organic conductor κ-(BEDT-TTF)2Cu(NCS)2. The measurements were made by means of a radio frequency (rf) tank circuit (~ 50 MHz) at very high magnetic fields(50T-60T) and low temperature(500 mK). The geometry of the rf excitation we used excited in-plane currents, and therefore we measured the in-plane resistivity. In contrast to conventional transport measurements that measure the inter-plane resistivity, the in-plane resistivity is dominated by the magnetic breakdown frequencies. As a result we measured much higher breakdown frequency amplitudes than conventional transport experiments. As is expected, the angular dependence of the Shubnikov-de Haas frequencies have a 1/cosθ behavior. This is due to the change of the cross sectional area of the tubular Fermi surface as the angle with respect to the magnetic field is changed. The amplitude of the oscillations changes due to the spin splitting factor which takes into account the ratio between the spin splitting and the energy spacing of the Landau levels which also has 1/cosθ behavior. We show that our data agree with the semi-classical theory (Lifshitz-Kosevich formula).


2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.


1975 ◽  
Vol 11 (11) ◽  
pp. 4364-4372 ◽  
Author(s):  
K. Andres ◽  
E. Bucher ◽  
P. H. Schmidt ◽  
J. P. Maita ◽  
S. Darack

1993 ◽  
Vol 48 (16) ◽  
pp. 12323-12325 ◽  
Author(s):  
R. J. Warburton ◽  
R. J. Nicholas ◽  
S. Sasaki ◽  
N. Miura ◽  
K. Woodbridge
Keyword(s):  

Physica B+C ◽  
1983 ◽  
Vol 120 (1-3) ◽  
pp. 310-313 ◽  
Author(s):  
V.L. Aksenov ◽  
E.A. Goremychkin ◽  
E. Mühle ◽  
Th. Frauenheim ◽  
W. Bührer

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