Formation and Structure of Epitaxial NiSi2 and CoSi2

1981 ◽  
Vol 10 ◽  
Author(s):  
L. J. Chen ◽  
J. W. Mayer ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Dark Field ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Interfacial Dislocations ◽  
Cobalt Thin Films ◽  
Predicted Values ◽  
Field Imaging

Transmission electron microscopy has been applied to study the formation and structure of epitaxial NiSi2 and CoSi2 thin films on silicon. Bright field and dark field imaging reveal the interface planes of faceted silicides through the strain contrast, analogous to the contrast of the precipitate-matrix interface of coherent or semicoherent precipitates. Superlattice dark field imaging depicts the distribution of twin-related and epitaxial silicides in these systems. { 111 } interfaces were found to be more prominent than {001} interfaces. Twin-related silicides were observed to cover more area on the substrate silicon than epitaxial silicides did.In situ annealing of nickel and cobalt thin films on silicon provides a unique means of investigation of the transformation from polycrystalline to epitaxial silicides. The NiSi2 transformation was found to be very rapid at 820°C, whereas the CoSi2 transformation appeared to be very sluggish. Furnace annealing confirmed that only a small fraction of CoSi2 transforms to epitaxial CoSi2 after annealing at 850°C for 4h.Diffraction contrast analysis has been applied to interfacial dislocations of epitaxial NiSi2/Si and CoSi2/Si systems. The dislocations were found to be of edge type with ⅙<112> and ½<110> Burgers' vectors. The average spacings are close to their respective theoretically predicted values.

Crystalline Morphologies of Polychloroprene Thin Films as Revealed by Transmission Electron Microscopy Observation

1999 ◽  
Vol 14 (4) ◽  
pp. 1645-1652 ◽  
Author(s):  
Toshiki Shimizu ◽  
Masaki Tsuji ◽  
Shinzo Kohjiya
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Dark Field ◽  
Bright Field Image ◽  
Dark Field Imaging ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Lamellar Crystals ◽  
Field Imaging

Thin films of polychloroprene (CR; Neoprene-W) were made by casting its solution (2.0 wt%) in benzene onto the water surface, and some of them were stretched by a desired amount of strain (ε) in their “molten” state. The specimens thus prepared were then crystallized and examined by transmission electron microscopy. Morphological observations in bright- and dark-field imaging modes and selected-area electron diffraction analysis revealed directly that filamentous entities observed in the bright-field image are the edge-on lamellar crystals. It was, therefore, confirmed that the morphological results obtained from the thin specimens of CR without any electron staining are basically in accord with those reported so far for the OsO4-stained thin films of CR.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

scholarly journals Annular Dark Field Imaging of Catalyst Nanoparticles in Single Shot Dynamic Transmission Electron Microscopy

2009 ◽  
Vol 15 (S2) ◽  
pp. 1082-1083
Author(s):  
D Masiel ◽  
B Reed ◽  
T LaGrange ◽  
ND Browning
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dark Field ◽  
Single Shot ◽  
Catalyst Nanoparticles ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Field Imaging

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Inversion Domain Boundaries in GaN Grown on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
L. T. Romano ◽  
J.E. Northrup
Keyword(s):  
Dark Field ◽  
Hydride Vapor Phase Epitaxy ◽  
Dark Field Imaging ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Convergent Beam ◽  
Inversion Domain Boundaries ◽  
Field Imaging ◽  
Beam Diffraction

ABSTRACTInversion domain boundaries (IDBs) in GaN grown on sapphire (0001) were studied by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam diffraction. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all found to contain IDBs. Inversion domains (IDs) that extended from the surface to the interface were found to be columnar with facets on the {10–10} and {11–20} planes. Other domains ended within the film that formed IDBs on the (0001) and {1–102} planes. The domains were found to grow in clusters and connect at points along the boundary.

Techniques for Characterising Artificial Layer Structures using Transmission Electron Microscopy

1987 ◽  
Vol 103 ◽  
Author(s):  
W. M. Stobbs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Changes ◽  
Dark Field ◽  
Multilayer Structures ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Layer Structures ◽  
Quantitative Characterisation ◽  
Field Imaging

ABSTRACTT.E.M. methods are described for the quantitative characterisation of the compositional and structural changes at interfaces and in homo- and hetero-phase multilayer structures. Many of the newer approaches described including the Fresnel and Centre Stop Dark Field Imaging Methods were developed specifically for such characterisations. The range of applications of each of the techniques is assessed as is the importance of delineating the limiting effects of inelastic and inelastic/elastic multiple scattering.

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

2011 ◽  
Vol 17 (5) ◽  
pp. 759-765 ◽  
Author(s):  
Tanmay Das ◽  
Somnath Bhattacharyya
Keyword(s):  
Rare Earth ◽  
Solid Phase ◽  
Rare Earth Oxide ◽  
Dark Field ◽  
X Ray ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

AbstractStructure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.

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