Laser Growth of Thin Silicon Crystals in Patterned Structures

1980 ◽  
Vol 1 ◽  
Author(s):  
R. M. Fastow ◽  
H. J. Leamy ◽  
G. K. Celler ◽  
Y. H. Wong ◽  
C. J. Doherty
Keyword(s):  
Grain Size ◽  
Crystal Growth ◽  
Heat Flow ◽  
Single Crystals ◽  
Polycrystalline Silicon ◽  
Silicon Crystals ◽  
Patterned Structures ◽  
Amorphous Substrates ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films

ABSTRACTBeam processing can be applied to thin, polycrystalline silicon films on amorphous substrates to: a( increase grain size, b( produce single, isolated crystals, and c( to produce oriented single crystals. Specific methods for these tasks are outlined. Crystal growth and heat flow consideration appropriate to each are presented.

Stresses in thin polycrystalline silicon films

1988 ◽  
Vol 162 ◽  
pp. 365-374 ◽  
Author(s):  
V.M. Koleshko ◽  
V.F. Belitsky ◽  
I.V. Kiryushin
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films

The Oxidation Kinetics of Thin Polycrystalline Silicon Films

1991 ◽  
Vol 138 (1) ◽  
pp. 214-219 ◽  
Author(s):  
Yangyuan Wang ◽  
Jiang Tao ◽  
Shen Tong ◽  
Tiejun Sun ◽  
Aizhen Zhang ◽  
...  
Keyword(s):  
Oxidation Kinetics ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films ◽  
Kinetics Of

Surface and interface nitridation of thin polycrystalline silicon films

1983 ◽  
Vol 42 (11) ◽  
pp. 950-952
Author(s):  
F. H. P. M. Habraken ◽  
A. E. T. Kuiper ◽  
Y. Tamminga
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Surface And Interface ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films

Structure of thin polycrystalline silicon films on ceramic substrates

2001 ◽  
Vol 223 (3) ◽  
pp. 332-340 ◽  
Author(s):  
A.J.M.M van Zutphen ◽  
P Šutta ◽  
F.D Tichelaar ◽  
A von Keitz ◽  
M Zeman ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Ceramic Substrates ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films

Grain Growth Processes during Transient Annealing of As-Implanted, Polycrystalline-Silicon Films

1984 ◽  
Vol 35 ◽  
Author(s):  
S.J. Krause ◽  
S.R. Wilson ◽  
W.M. Paulson ◽  
R.B. Gregory
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Average Diameter ◽  
Silicon Films ◽  
Growth Processes ◽  
Cross Sectional ◽  
Polycrystalline Silicon Films ◽  
Equiaxed Grains

ABSTRACTPolycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed on a Varian IA 200 rapid thermal annealer. Transmission electron microscopy was used to study through-thickness and cross sectional views of grain size and morphology of as-deposited and of transient annealed films. A bimoda] distribution of grain sizes was present in as-deposited polycrystalline silicon films. The first population was due to columnar growth of some grains to a final average diameter of 20 rm. The second population of small equiaxed grains of 5 nm average diameter were formed early in the deposition process. During transient annealing grains in the first population grew rapidly up to 280-nm equiaxed grains. After this the growth rate decreased due to the grain size reaching the thickness of the film. Grains in the second population grew rapidly up to a size of 150 nm, after which the growth rate was lowered due to grains impinging upon one another. The grain growth processes for both populations have been described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times characteristic of transient annealing processes.

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