Defect-Induced Photoluminescence from Pulsed Laser Annealed Si

1980 ◽  
Vol 1 ◽  
Author(s):  
M S Skolnick ◽  
A G Cullis ◽  
H C Webber
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Solid Phase ◽  
Pulsed Laser ◽  
The Other ◽  
Melted Region ◽  
Other Hand ◽  
Low Temperature Photoluminescence ◽  
Ion Implanted

ABSTRACTLow temperature photoluminescence is used to study damage centers in ion implanted, pulsed laser annealed Si. A number of intense, damage related photoluminescence lines W, G and 13 are observed. It is shown that most of the W (and 13) centers are created by solid phase annealing of implant damage beyond the laser melted region. Peak G, on the other hand, is present in the tail of the implant damage before laser annealing.

Nonequilibrium Crystal Growth During Pulsed Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
C. W. White
Keyword(s):  
Crystal Growth ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Melted Region ◽  
Pulsed Laser Annealing ◽  
Far From Equilibrium ◽  
Ion Implanted

ABSTRACTSolidification of the melted region during pulsed laser annealing occurs under conditions that are far from equilibrium at the interface. Studies of laser annealing of ion implanted silicon can be used to provide a wealth of information on nonequilibrium crystal growth phenomena.

Oxytocin analogues with non-coded amino acid residues in position 8: [8-Neopentylglycine]oxytocin and [8-cycloleucine]oxytocin

1987 ◽  
Vol 52 (9) ◽  
pp. 2317-2325 ◽  
Author(s):  
Jan Hlaváček ◽  
Jan Pospíšek ◽  
Jiřina Slaninová ◽  
Walter Y. Chan ◽  
Victor J. Hruby
Keyword(s):  
Amino Acid ◽  
Solid Phase Synthesis ◽  
Solid Phase ◽  
The Other ◽  
Amino Acid Residues ◽  
Phase Synthesis ◽  
Other Hand ◽  
Fragment Condensation

[8-Neopentylglycine]oxytocin (II) and [8-cycloleucine]oxytocin (III) were prepared by a combination of solid-phase synthesis and fragment condensation. Both analogues exhibited decreased uterotonic potency in vitro, each being about 15-30% that of oxytocin. Analogue II also displayed similarly decreased uterotonic potency in vivo and galactogogic potency. On the other hand, analogue III exhibited almost the same potency as oxytocin in the uterotonic assay in vivo and in the galactogogic assay.

Comparison of the Potency of 8-L-Arginine, 8-D-Arginine and 8-D-Homoarginine Vasopressin Analogs with Substituted Phenylalanine in Position 2

1994 ◽  
Vol 59 (6) ◽  
pp. 1439-1450 ◽  
Author(s):  
Miroslava Žertová ◽  
Jiřina Slaninová ◽  
Zdenko Procházka
Keyword(s):  
Amino Acid ◽  
Solid Phase Synthesis ◽  
Solid Phase ◽  
Basic Amino Acid ◽  
The Other ◽  
Side Chain ◽  
Inhibitory Potency ◽  
Phase Synthesis ◽  
Other Hand ◽  
Order Of Magnitude

An analysis of the uterotonic potencies of all analogs having substituted L- or D-tyrosine or -phenylalanine in position 2 and L-arginine, D-arginine or D-homoarginine in position 8 was made. The series of analogs already published was completed by the solid phase synthesis of ten new analogs having L- or D-Phe, L- or D-Phe(2-Et), L- or D-Phe(2,4,6-triMe) or D-Tyr(Me) in position 2 and either L- or D-arginine in position 8. All newly synthesized analogs were found to be uterotonic inhibitors. Deamination increases both the agonistic and antagonistic potency. In the case of phenylalanine analogs the change of configuration from L to D in position 2 enhances the uterotonic inhibition for more than 1 order of magnitude. The L to D change in position 8 enhances the inhibitory potency negligibly. Prolongation of the side chain of the D-basic amino acid in position 8 seems to decrease slightly the inhibitory potency if there is L-substituted amino acid in position 2. On the other hand there is a tendency to the increase of the inhibitory potency if there is D-substituted amino acid in position 2.

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals Pulsed Laser Annealing of Ion Implanted Si

1979 ◽  
Vol 7 (2) ◽  
pp. 152-160
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A. H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Energy in Thermal Physics

2021 ◽  
pp. 1-48
Author(s):  
Daniel V. Schroeder
Keyword(s):  
Low Temperature ◽  
Molecular Level ◽  
The Other ◽  
Thermal Physics ◽  
Other Hand ◽  
Energy Flows ◽  
Basic Concepts ◽  
Simple Models

The behavior of energy in bulk-matter systems is subtle. We observe that energy flows spontaneously from high to low temperature; we refer to this flowing energy as heat; and we distinguish heat from work, the transfer of energy through mechanical or other means unrelated to temperature. On the other hand, simple models of gases and solids strongly suggest that at the molecular level all energy is purely mechanical. This introductory chapter surveys these basic concepts of thermal physics, illustrates them with a wide variety of familiar examples, and sets the stage for developing a deeper understanding.

Pulsed laser annealing of ion implanted silicon

1979 ◽  
Author(s):  
J. Stephen ◽  
B. J. Smith ◽  
N. G. Blamires
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Effects of Solid Volume Fraction on the Gelcasting of Alumina Suspensions

2007 ◽  
Vol 280-283 ◽  
pp. 1041-1044
Author(s):  
Yong Huang ◽  
Li Ming Zhang ◽  
Hai Feng Li ◽  
Tian Ma
Keyword(s):  
Low Temperature ◽  
Rheological Behavior ◽  
Volume Fraction ◽  
Solid Volume Fraction ◽  
The Other ◽  
Sintered Body ◽  
Green Body ◽  
Microstructure And Properties ◽  
Other Hand ◽  
Alumina Suspensions

The effects of solid volume fraction (SVF) on the gelation of alumina suspensions for gelcasting, debonding and sintering of the green body were studied. It was found that with SVF rising, the gelation of alumina suspension delayed; and the strength of green body decreased. On the other hand, high SVF resulted in that polymerized acrylamide split at a relative low temperature. These phenomena manifest that the fast polymerization of monomers in high SVF alumina suspension was inhibited, and the flexibility of the gelcasting was improved. However, Excessive solid volume fraction was prone to a bad rheological behavior of alumina suspension, and deteriorated the microstructure and properties of sintered body.

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