Nonequilibrium Crystal Growth During Pulsed Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
C. W. White
Keyword(s):  
Crystal Growth ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Melted Region ◽  
Pulsed Laser Annealing ◽  
Far From Equilibrium ◽  
Ion Implanted

ABSTRACTSolidification of the melted region during pulsed laser annealing occurs under conditions that are far from equilibrium at the interface. Studies of laser annealing of ion implanted silicon can be used to provide a wealth of information on nonequilibrium crystal growth phenomena.

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals Pulsed Laser Annealing of Ion Implanted Si

1979 ◽  
Vol 7 (2) ◽  
pp. 152-160
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A. H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Pulsed laser annealing of ion implanted silicon

1979 ◽  
Author(s):  
J. Stephen ◽  
B. J. Smith ◽  
N. G. Blamires
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Residual Defects after Pulsed Laser Annealing of Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
A. Mesli ◽  
J.C. Muller ◽  
D. Salles ◽  
P. Siffert
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Dopant Distribution ◽  
Common View ◽  
Pulsed Laser Annealing ◽  
Laser Effect ◽  
The Common ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Ion Implanted

ABSTRACTCapacitance transient spectroscopy has been used to investigate the electrically active defects subsisting, after a ruby laser pulse annealing, in ion implanted silicon. In contrast to the common view, it is shown that the identified point defects are related to residual implantation related defects buried beyond the dopant distribution and not to the laser effect.

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