Investigation on the Work Function of Tungsten and Thermal stability of W/SiO2/Si, W/SiON/Si and W/HfO2/Si Gate Stacks

2006 ◽  
Vol 917 ◽  
Author(s):  
Pei-Chuen Jiang ◽  
Jen-Sue Chen ◽  
K. H. Cheng ◽  
T. J. Hu ◽  
K. B. Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Integrated Circuits ◽  
Work Function ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
Flat Band ◽  
Gate Electrode ◽  
Mos Capacitors ◽  
Fermi Level Pinning ◽  
Thermal Stability Of

AbstractReplacement of poly-Si and SiO2 with new gate electrode and high k gate oxide is an inevitable trend for next-generation CMOS integrated circuits. Therefore, work function (£Xm) of gate electrodes as well as the thermal stability and electrical behaviors of MOS capacitors should be understood. In this study, tungsten (W) is applied as the gate electrode and the gate dielectric materials are SiO2, SiON and HfO2. £Xm of W and electrical properties of the MOS structures are investigated. £Xm,measured of W is calculated from the flat-band voltage (VFB) of MOS capacitors with dielectrics of various thicknesse. For W/SiO2/Si structure, the £Xm,measured of W is 4.67 V; however, the £Xm,measured of W in W/SiON/Si and W/HfO2/Si structures is 4.60 V and 4.84 V, respectively. The result means that the £Xm,measured of W in W/HfO2/Si structures has extrinsic contributions to Fermi level pinning. The phase of as-deposited W is £]-W (or £]-W+£\-W) phase and transfers to £\-W+WO3 mix phase after annealing at 500°C in N2+H2 ambient for 30 min. The trapped charges and oxide charges of dielectric are reduced after annealing. However, the EOT of W/SiO2/Si increases significantly after annealing, indicating the thermal stability of this capacitor is poor.

Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

2002 ◽  
Vol 303 (1) ◽  
pp. 54-63 ◽  
Author(s):  
P.S. Lysaght ◽  
P.J. Chen ◽  
R. Bergmann ◽  
T. Messina ◽  
R.W. Murto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric

Improved thermal stability of ruthenium oxide metal gate electrode on hafnium oxide gate dielectric

2007 ◽  
Vol 91 (3) ◽  
pp. 033512 ◽  
Author(s):  
Musarrat Hasan ◽  
Hokyung Park ◽  
Joon-myong Lee ◽  
Hyunsang Hwang
Keyword(s):  
Thermal Stability ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Ruthenium Oxide ◽  
Gate Electrode ◽  
Metal Gate ◽  
Thermal Stability Of

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

scholarly journals Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Moderate Temperature ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
X Ray ◽  
Thermal Stability Of

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

2010 ◽  
Vol 96 (14) ◽  
pp. 142112 ◽  
Author(s):  
Dong Chan Suh ◽  
Young Dae Cho ◽  
Sun Wook Kim ◽  
Dae-Hong Ko ◽  
Yongshik Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of

Nitrogen bonding, work function and thermal stability of nitrided graphite surface: An in situ XPS, UPS and HREELS study

2020 ◽  
Vol 525 ◽  
pp. 146562 ◽  
Author(s):  
Mohan Kumar Kuntumalla ◽  
Mohammed Attrash ◽  
Rozalia Akhvlediani ◽  
Shaul Michaelson ◽  
Alon Hoffman
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Graphite Surface ◽  
In Situ Xps ◽  
Thermal Stability Of

MBE Growth of Oxides for III–N MOSFETs

1999 ◽  
Vol 573 ◽  
Author(s):  
B. Gila ◽  
K N. Lee ◽  
J Laroche ◽  
F Ren ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Dielectric Materials ◽  
Interface State ◽  
Oxide Semiconductor ◽  
Good Thermal Stability ◽  
Deposition Conditions

ABSTRACTReproducible fabrication of high performance metal oxide semiconductor field effect transistors (MOSFETs) from compound semiconductors will require both good interfacial electrical characteristics and good thermal stability. While dielectrics such as SiO2, AIN, and GdGaOx have demonstrated low to moderate interface state densities, questions remain about their thermal stability and reliability, particularly for use in high power or high temperature widebandgap devices. In this paper we will compare the utility of two potential gate dielectric materials: GdOx and GaOx. GdOx has been found to produce layers with excellent surface morphologies as evidenced by surface roughness of less than I nm. Stoichiometric films can be easily obtained over a range of deposition conditions, though deposition temperatures of 500°C appear to offer the optimum interfacial electrical quality. By contrast GaOx films are quite rough, polycrystalline and show poor thermal stability. Further they exhibit a range of stoichiometries depending upon deposition temperature, Ga flux and oxygen flux. This paper will describe the relationship between deposition conditions and film characteristics for both materials, and will present electrical characterization of capacitors fabricated from GdOx on Si.

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