Advanced Flexible CIGS Solar Cells Enhanced by Broadband Nanostructured Antireflection Coatings

2015 ◽  
Vol 1771 ◽  
pp. 145-150
Author(s):  
Gopal G. Pethuraja ◽  
Roger E. Welser ◽  
John W. Zeller ◽  
Yash R. Puri ◽  
Ashok K. Sood ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Specific Power ◽  
Band Spectrum ◽  
Solar Panels ◽  
Antireflection Coatings ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Cigs Solar Cells

ABSTRACTFlexible copper indium gallium diselenide (CIGS) solar cells on lightweight substrates can deliver high specific powers. Flexible lightweight CIGS solar cells are also primary candidates for building-integrated panels. In all applications, CIGS cells can greatly benefit from the application of broadband and wide-angle AR coating technology. The AR coatings can significantly improve the transmittance of light over the entire CIGS absorption band spectrum. Increased short-circuit current has been observed after integrating AR coated films onto baseline solar panels. NREL’s System Advisor Model (SAM) has predicted up to 14% higher annual power output on AR integrated vertical or building-integrated panels. The combination of lightweight flexible substrates and advanced device designs employing nanostructured optical coatings together have the potential to achieve flexible CIGS modules with enhanced efficiencies and specific power.

scholarly journals Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

2021 ◽  
pp. 48-58
Author(s):  
C. O. Lawani ◽  
G. J. Ibeha ◽  
Olumide Ige ◽  
Eli Danladi ◽  
J. O. Emmanuela ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Defect Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Copper Indium Gallium Diselenide ◽  
Buffer Layer Thickness ◽  
Cigs Solar Cells

The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the performance of CIGS solar cells were investigated systematically. The study was carried out using Solar Cells Capacitance Simulator (SCAPS) code, which is capable of solving the basic semiconductor equations. Employing numerical modelling, a solar cell with the structure Al|ZnO : Al|In2S3|CIGS|Pt was simulated and in it, a double acceptor defect (-2/-1/0) with a density of 1014 cm-3 was set in the absorber in the first instance. This initial device gave a power conversion efficiency (PCE) of 25.85 %, short circuit current density (Jsc) of 37.9576 mAcm-2, Photovoltage (Voc) of 0.7992 V and fill factor (FF) of 85.22 %. When the density of multivalent defect (-2/-1/0) was varied between 1010 cm-3 and 1017 cm-3 the solar cells performance dropped from 26.81 % to 16.87 %. The champion device was with multivalent defect of 1010 cm-3 which shows an enhancement of 3.71 % from the pristine device. On varying the CIGS layer thickness from 0.4 um to 3.6 um, an increase in PCE was observed from 0.4 um to 1.2 um then the PCE began to decrease beyond a thickness of 1.2 um. The best PCE was recorded with thickness of 1.2 um which gave Jsc of 37.7506 mAcm-2, Voc of 0.8059 V, FF of 85.2655 %. On varying the In2S3 (buffer) layer thickness from 0.01 um to 0.08 um, we observed that there was no significant change in photovoltaic parameters of the solar cells as buffer layer thickness increased.

scholarly journals Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4268
Author(s):  
Jessica de Wild ◽  
Gizem Birant ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Electron Microscopic ◽  
Current Increase ◽  
Time Resolved ◽  
Cigs Solar Cells

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.

Understanding Metastable Defect Creation in CIGS by Detailed Device Modeling and Measurements on Bifacial Solar Cells

2007 ◽  
Vol 1012 ◽  
Author(s):  
Jin Woo Lee ◽  
David Berney Needleman ◽  
William N. Shafarman ◽  
J. David Cohen
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Channel Modeling ◽  
Open Circuit ◽  
Conversion Model ◽  
Donor Acceptor ◽  
Recombination Channel ◽  
Cigs Solar Cells ◽  
Induced Changes

AbstractWe present a compensated donor-acceptor conversion model to explain the metastable light-induced changes in the performance of CIGS solar cells. In this model, compensating donors plays the role of recombination channel. Modeling using SCAPS-1D yielded reasonable fits to the I-V curves in different metastable states, matching the experimentally observed decreases in short circuit current and fill factor as well as the lack of change in open circuit voltage. Comparison of the experimental results from bifacial solar cells and SCAPS simulations strongly supports the compensated donor-acceptor conversion model both qualitatively and quantitatively.

scholarly journals Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Minghua Li ◽  
Libin Zeng ◽  
Yifeng Chen ◽  
Lin Zhuang ◽  
Xuemeng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Double Layer ◽  
Short Circuit ◽  
Single Layer ◽  
Short Circuit Current ◽  
Industrial Applications ◽  
Short Circuit Current Density ◽  
Multicrystalline Silicon ◽  
Antireflection Coatings ◽  
Si Solar Cells

We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC) on acid textures to fabricate colored multicrystalline silicon (mc-Si) solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc) as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2thickness for the case of SiO2/SiNx:H (DARC) with fixed SiNx:H (refractive indexn=2.1at 633 nm, and thickness = 80 nm). The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam) evaporation to deposit a layer of SiO2over the standard SiNx:H for156×156 mm2mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm andI-Vmeasurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

scholarly journals Improvement of short circuit current of mono crystalline silicon solar cells

2013 ◽  
Vol 16 (1) ◽  
pp. 48-56
Author(s):  
Vu Ngoc Hoang ◽  
Linh Ngoc Tran ◽  
Lan Truong ◽  
Khoa Thanh Nhat Phan ◽  
Chien Mau Dang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Front Surface ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Crystalline Silicon Solar Cell ◽  
Antireflection Coatings

In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.

scholarly journals Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 4545
Author(s):  
Deewakar Poudel ◽  
Shankar Karki ◽  
Benjamin Belfore ◽  
Grace Rajan ◽  
Sushma Swaraj Atluri ◽  
...  
Keyword(s):  
Solar Cells ◽  
Indium Tin Oxide ◽  
Degradation Mechanism ◽  
Transparent Conductive Oxide ◽  
Window Layer ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Cigs Solar Cells ◽  
The Impact ◽  
Secondary Ion

The impact of moisture ingress on the surface of copper indium gallium diselenide (CIGS) solar cells was studied. While industry-scale modules are encapsulated in specialized polymers and glass, over time, the glass can break and the encapsulant can degrade. During such conditions, water can potentially degrade the interior layers and decrease performance. The first layer the water will come in contact with is the transparent conductive oxide (TCO) layer. To simulate the impact of this moisture ingress, complete devices were immersed in deionized water. To identify the potential sources of degradation, a common window layer for CIGS devices—a bilayer of intrinsic zinc oxide (i-ZnO) and conductive indium tin oxide (ITO)—was deposited. The thin films were then analyzed both pre and post water soaking. To determine the extent of ingress, dynamic secondary ion mass spectroscopy (SIMS) was performed on completed devices to analyze impurity diffusion (predominantly sodium and potassium) in the devices. The results were compared to device measurements, and indicated a degradation of device efficiency (mostly fill factor, contrary to previous studies), potentially due to a modification of the alkali profile.

Wide-gap CIGS solar cells with Zn1-yMgyO transparent conducting film

2005 ◽  
Vol 865 ◽  
Author(s):  
K. Matsubara ◽  
A. Yamada ◽  
S. Ishizuka ◽  
K. Sakurai ◽  
H. Tampo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Band Gap Energy ◽  
Short Circuit Current Density ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Wide Gap ◽  
Cigs Solar Cells ◽  
Mg Content

AbstractZn1-yMgyO bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-xGax)Se2 thin film solar cells. Undoped Zn1-yMgyO and Al doped Zn1-yMgyO films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-yMgyO films with Mg content y of up to 0.10 were examined. For Cu(In1-xGax)Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-yMgyO and Al doped Zn1-yMgyO instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

Sign in / Sign up

Export Citation Format

Share Document