Cu-based quaternary chalcogenide Cu2BaSnS4 thin films acting as hole transport layers in inverted perovskite CH3NH3PbI3 solar cells
2017 ◽
Vol 5
(6)
◽
pp. 2920-2928
◽
Keyword(s):
p-Type wide-bandgap Cu2BaSnS4 holds promise for use as hole transport material in inverted perovskite CH3NH3PbI3 thin-film solar cells.