Self-catalyzed InP Nanowires on Patterned Si Substrates

2015 ◽  
Vol 1751 ◽  
Author(s):  
Kenichi Kawaguchi ◽  
Hisao Sudo ◽  
Manabu Matsuda ◽  
Kazuya Takemoto ◽  
Tsuyoshi Yamamoto ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Group ◽  
Flow Rates ◽  
Group Iii ◽  
Si Substrates

ABSTRACTSelf-catalyzed growth of position-defined InP nanowires (NWs) was investigated on SiO2-mask-pattered Si substrates using metalorganic vapor-phase epitaxy. Using low growth temperatures and high group-III flow rates, pyramidal InP NWs were formed vertically on the mask openings. The diameter and tapering of the InP NWs were successfully controlled by the introduction of HCl and H2S gases during the NW growth. In addition, crystal growth of radial InP/InAsP/InP quantum wells on the sidewall of the InP NWs was performed on Si substrates.

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 2, No. 2B) ◽  
pp. L143-L145 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Masayoshi Kosaki ◽  
Yohei Yukawa ◽  
Shigeo Yamaguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
In Doping

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces

2010 ◽  
Vol 312 (2) ◽  
pp. 180-184 ◽  
Author(s):  
F. Reiher ◽  
A. Dadgar ◽  
J. Bläsing ◽  
M. Wieneke ◽  
A. Krost
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Si Substrates

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 106 (22) ◽  
pp. 222102 ◽  
Author(s):  
Kanako Shojiki ◽  
Jung-Hun Choi ◽  
Takuya Iwabuchi ◽  
Noritaka Usami ◽  
Tomoyuki Tanikawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metastable Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phase Inclusion

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy

1989 ◽  
Vol 54 (10) ◽  
pp. 922-924 ◽  
Author(s):  
S. K. Haywood ◽  
E. T. R. Chidley ◽  
R. E. Mallard ◽  
N. J. Mason ◽  
R. J. Nicholas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

2019 ◽  
Vol 55 (4) ◽  
pp. 315-319
Author(s):  
M. A. Ladugin ◽  
A. Yu. Andreev ◽  
I. V. Yarotskaya ◽  
Yu. L. Ryaboshtan ◽  
T. A. Bagaev ◽  
...  
Keyword(s):  
Comparative Study ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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