Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 107 (12) ◽  
pp. 121602 ◽  
Author(s):  
S. F. Chichibu ◽  
H. Miyake ◽  
Y. Ishikawa ◽  
K. Furusawa ◽  
K. Hiramatsu
Keyword(s):  
Quantum Wells ◽  
Mole Fraction ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Cation Vacancies ◽  
Si Doping

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 106 (22) ◽  
pp. 222102 ◽  
Author(s):  
Kanako Shojiki ◽  
Jung-Hun Choi ◽  
Takuya Iwabuchi ◽  
Noritaka Usami ◽  
Tomoyuki Tanikawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metastable Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phase Inclusion

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

2021 ◽  
Author(s):  
Shigefusa F. Chichibu ◽  
Hideto MIYAKE ◽  
Akira Uedono
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Si Doping ◽  
Deep Ultraviolet ◽  
Si Doped ◽  
Recombination Centers

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.

InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

2000 ◽  
Vol 77 (11) ◽  
pp. 1638-1640 ◽  
Author(s):  
G. Pozina ◽  
J. P. Bergman ◽  
B. Monemar ◽  
M. Iwaya ◽  
S. Nitta ◽  
...  
Keyword(s):  
Mass Transport ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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