Effect of n doped amorphous layer between microcrystalline i/n layer on the performance of micromorph tandem solar cells

2015 ◽  
Vol 1771 ◽  
pp. 9-15
Author(s):  
Jingjing Yang ◽  
Tingkai Li ◽  
Xueshi Tan ◽  
Feng Zhang ◽  
Bingxue Mao
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Layer ◽  
Chemical Vapor ◽  
Amorphous Layer ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Growth Defects ◽  
Vapor Deposition Technique ◽  
Silicon Growth

ABSTRACTPin/pin “micromorph” tandem solar cells were manufactured by the industrial production line of Hunan Gongchuang PV Science & Technology Co., Ltd. Based on this kind of solar cells, a n-doped amorphous silicon layer deposited by plasma enhanced chemical vapor deposition technique (PECVD) was inserted between the microcrystalline silicon intrinsic layer and n-doped layer. The result showed that the introduced n-type amorphous silicon layer well improved the solar cells performance by reducing the bad effects caused by microcrystalline silicon growth defects. Compared with the solar cells without inserting the n-doped amorphous silicon layer, the open voltage and efficiency increased remarkably. When the thickness of n-doped amorphous silicon layer is 8nm, the open voltage increased from 72.9V to 73.6V and efficiency increased from 10.63% to 10.74%.

Performance of μ-Si:H Solar Cells with Amorphous P-Layer

1998 ◽  
Vol 507 ◽  
Author(s):  
Frank Siebke ◽  
Shigeo Yata ◽  
Yoshihiro Hishikawa ◽  
Makoto Tanaka
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Silicon Layer ◽  
Amorphous Layer ◽  
Open Circuit ◽  
Optimized Design ◽  
Microcrystalline Silicon ◽  
Cell Structures ◽  
Proper Design

ABSTRACTWe investigated p-i-n solar cells with microcrystalline absorber but amorphous contact layers. Fill factor and open circuit voltage depend sensitively on the p/i interface. Using an optimized design of the p/i interface, cells with fill factors up to 65% and open circuit voltages of 0.45 V were deposited on amorphous p-layers. They are comparable to cells on micro- crystalline p-layers. A further increase of the open circuit voltage was achieved by variation of the p/i interface treatment but up to now it was accompanied by a decrease of the fill factor. We attribute this effect to a thin undoped amorphous layer at the p/i interface. Under non-optimized deposition conditions an amorphous instead of a microcrystalline silicon layer is grown at the p/i interface which can be detected by Raman measurements on cell structures. While the proper design of the p/i interface is crucial for the cell performance we did not observe significant differences between cells with amorphous and microcrystalline n-layers. The results reveal that the open circuit voltage is limited by the bulk properties of the undoped microcrystalline silicon.

scholarly journals Material and solar cell research in high efficiency micromorph tandem solar cell

2015 ◽  
Vol 37 ◽  
pp. 434 ◽  
Author(s):  
Razagh Hafezi ◽  
Soroush Karimi ◽  
Sharie Jamalzae ◽  
Masoud Jabbari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell

“Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (_c-Si:H) thin films (layers), both deposited at low temperatures (200_C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. Finally, present performances and future perspectives for a high efficiency ‘micromorph’ (mc-Si:Hya-Si:H) tandem solar cells are discussed.

Preparation Temperature Effects in Microcrystalline Silicon Thin Film Solar Cells

2001 ◽  
Vol 664 ◽  
Author(s):  
O. Vetterl ◽  
A. Dasgupta ◽  
A. Lambertz ◽  
H. Stiebig ◽  
F. Finger ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Chemical Vapor ◽  
Underlying Mechanism ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Preparation Temperature ◽  
Layer Material ◽  
Vapor Deposition Technique ◽  
Substrate Temperatures

ABSTRACTMicrocrystalline silicon solar cells were prepared at various substrate temperatures using a plasma enhanced chemical vapor deposition technique at 95 MHz. Devices in superstrate configuration, i.e. prepared on transparent glass/ZnO substrates with deposition sequence p-i-n, suffer from a reduction of short wavelength response upon increasing substrate temperature. As underlying mechanism adverse effects on the p-i interface region are discussed. For devices in substrate configuration (deposition sequence n-i-p on Ag/ZnO back-reflectors) a pronounced efficiency maximum with a highest value of 8.7 % is observed at substrate temperatures of about 250 °C. Comparing the dark J-V characteristics obtained for different device thicknesses at substrate temperatures of 200 °and 250 °C, respectively, improved i-layer material and transport properties are suggested in the latter case. The results illustrate the sensitivity ofmicrocrystalline silicon devices with respect to the employed substrate temperature by effects on the absorber layer material properties on the one hand and by effects related to the device design, e.g. the specific deposition sequence of the individual layers, on the other hand.

Hydrogenated microcrystalline silicon germanium: A bottom cell material for amorphous silicon‐based tandem solar cells

1996 ◽  
Vol 69 (27) ◽  
pp. 4224-4226 ◽  
Author(s):  
G. Ganguly ◽  
T. Ikeda ◽  
T. Nishimiya ◽  
K. Saitoh ◽  
M. Kondo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
Cell Material ◽  
Silicon Based

scholarly journals High Efficiency Inorganic/Inorganic Amorphous Silicon/Heterojunction Silicon Tandem Solar Cells

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Jinjoo Park ◽  
Vinh Ai Dao ◽  
Sangho Kim ◽  
Duy Phong Pham ◽  
Sunbo Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Tandem Solar Cells

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

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