Indium Tin Oxide Conductive Nanowires Formed by Magnetron Sputtering

2015 ◽  
Vol 1747 ◽  
Author(s):  
Naoki Yamamoto ◽  
Kirihiko Morisawa
Keyword(s):  
Crystal Structure ◽  
Electron Microscope ◽  
Cross Sections ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Elliptical Cross ◽  
Cubic Crystal ◽  
Glass Substrates ◽  
Order Of Magnitude ◽  
Scanning Electron

ABSTRACTIndium tin oxide (ITO) nanowires (NWs) were grown on glass substrates by using ITO sputtering sources (targets) with SnO2 contents in the range of approximately 5.0 to 30.0 wt%. NW growth became apparent at temperatures above 125 °C, and the In, Sn and O contents of the resulting ITO NWs were similar to those of the ITO source. NWs grown from ITO sources containing 5.0 to 12.0 wt% SnO2 had circular or elliptical cross-sections, while those obtained from sources with 12.0 to 30.0 wt% SnO2 exhibited square cross-sections. ITO NWs approximately 2 μm in length were obtained as single crystals with a cubic crystal structure. The resistivity of an ITO NW was measured using four nanoprobes in conjunction with a field emission scanning electron microscope and was found to range from 0.13 to 0.6 μΩ-m, values that were approximately one order of magnitude lower than those of transparent ITO films.

Electrodeposition and Characterization of Very Thin Film II-VI Compounds for Novel Superlattice Solar Cells

2010 ◽  
Author(s):  
Sukriti Jain ◽  
Pritpal Singh
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Lead Telluride ◽  
Glass Substrates ◽  
Absorption Spectrophotometry ◽  
Layer Structures ◽  
Deposited Films ◽  
Scanning Electron ◽  
Dense Films

Thin films of lead telluride (PbTe) and zinc telluride (ZnTe) have been electrodeposited on indium tin oxide (ITO)-coated glass substrates. Uniform dense films of ∼ 100 nm have been obtained for both materials. The electrochemical deposition procedures for fabricating these films are described. The as-deposited films have been characterized by scanning electron microscopy, energy dispersive spectroscopy, and optical absorption spectrophotometry. Multi layer structures, up to 3 layers, of ZnTe/PbTe films, have been fabricated.

scholarly journals Pembuatan Counter Electrode Karbon Untuk Aplikasi Elektroda Dye-Sensitized Solar Cell (DSSC)

2017 ◽  
Vol 8 (2) ◽  
pp. 78-86
Author(s):  
Siti Chadijah ◽  
Dahyunir Dahlan ◽  
Harmadi Harmadi
Keyword(s):  
Electron Microscope ◽  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Counter Electrode ◽  
Dye Sensitized Solar Cell ◽  
Ammonium Bromide ◽  
Dye Sensitized ◽  
Electron Scanning Electron Microscope ◽  
Scanning Electron

Telah dilakukan pembuatan counter electrode karbon di atas substrat Indium Tin Oxide (ITO) untuk aplikasi DSSC. Counter electrode karbon dibuat dari; goresan pensil 7B, jelaga api lilin, serta kombinasi goresan pensil dangan jelaga api lilin. Komposisi bahan dasar terdiri dari  serbuk karbon dari pensil, cetyl trymetil ammonium bromide (CTAB) dan TiO2. Hasil karakterisasi mikroskop optik memperlihatkan sumber karbon yang berasal dari jelaga api lilin menghasilkan morfologi permukaan sangat halus dan homogen serta terdistribusi merata pada substrat ITO. Sementara dari foto mikroskop electron (Scanning Electron Microscope, SEM) sampel tersebut memperlihatkan adanya pori-pori. Dari pengukuran karakteristik I-V dihitung efisiensi sel surya yang menggunakan elektroda karbon tersebut.  Efisiensi counter electrode yang diperoleh dari goresan pensil adalah  0,064 %,  jelaga api lilin adalah 0,163%, goresan pensil dan jelaga api lilina dalah  0,088%, jelaga api lilin baru digores pensil 0,008%, campuran serbuk karbon dengan 3 mL air serta 0,1 gram CTAB serta 0,1 gram TiO2 0,065%. Kata Kunci: Karbon, ITO, Counter electrode, DSSC, Efisiensi  

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

Study on the Properties of Doped La in BaBi4Ti4O15 Ceramic

2007 ◽  
Vol 26-28 ◽  
pp. 243-246
Author(s):  
Xing Hua Yang ◽  
Jin Liang Huang ◽  
Xiao Wang ◽  
Chun Wei Cui
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sintering Temperature ◽  
Solid Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lanthanum Content ◽  
Scanning Electron

BaBi4-xLaxTi4O15 (BBLT) ceramics were prepared by conventional solid phase sintering ceramics processing technology. The crystal structure and the microstructure were detected by X-ray diffraction (XRD) and scanning electron microscope (SEM). The XRD analyses show that La3+ ions doping did not change the crystal structure of BBT ceramics. The sintering temperature increased from 1120°C to 1150°C with increasing Lanthanum content from 0 to 0.5, but it widened the sintering temperature range from 20°C to 50°C and refined the grain size of the BBT ceramic. Additionally, polarization treatment was performed and finally piezoelectric property was measured. As a result, the piezoelectric constant d33 of the 0.1at.% doped BBLT ceramics reached its highest value about 22pc/N at polarizing electric field of 8kV/mm and polarizing temperature of 120°C for 30min.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

scholarly journals Indium-tin oxide thin films by metal-organic decomposition

1993 ◽  
Vol 8 (12) ◽  
pp. 3135-3144 ◽  
Author(s):  
Dennis Gallagher ◽  
Francis Scanlan ◽  
Raymond Houriet ◽  
Hans Jörg Mathieu ◽  
Terry A. Ring
Keyword(s):  
Thermal Decomposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Decomposition Reaction ◽  
Scanning Calorimetry ◽  
Glass Substrates ◽  
Reducing Atmosphere ◽  
Temperature Ramp ◽  
Crystalline Films ◽  
Metal Organic

In2O3–SnO2 films were produced by thermal decomposition of a deposit which was dip coated on borosilicate glass substrates from an acetylacetone solution of indium and tin acetoacetonate. Thermal analysis showed complete pyrolysis of the organics by 400 °C. The thermal decomposition reaction generated acetylacetone gas and was found to be first order with an activation energy of 13.6 Kcal/mole. Differences in thermal decomposition between the film and bulk materials were noted. As measured by differential scanning calorimetry using a 40 °C/min temperature ramp, the glass transition temperature of the deposited oxide film was found to be ∼462 °C, and the film crystallization temperature was found to be ∼518 °C. For film fabrication, thermal decomposition of the films was performed at 500 °C in air for 1 h followed by reduction for various times at 500 °C in a reducing atmosphere. Crystalline films resulted for these conditions. A resistivity of ∼1.01 × 10−3 Ω · cm, at 8 wt. % tin oxide with a transparency of ∼95% at 400 nm, has been achieved for a 273 nm thick film.

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