HVPE GaN with Low Concentration of Point Defects for Power Electronics

2015 ◽  
Vol 1736 ◽  
Author(s):  
M. A. Reshchikov ◽  
J.D. McNamara ◽  
A. Usikov ◽  
H. Helava ◽  
Yu. Makarov

ABSTRACTWe have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ∼1017 cm-3. The concentrations of defects responsible for other defect-related PL bands rarely exceed 1015 cm-3.

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.


2021 ◽  
Vol 13 (8) ◽  
pp. 4591
Author(s):  
Shuanglei Huang ◽  
Daishe Wu

The tremendous input of ammonium and rare earth element (REE) ions released by the enormous consumption of (NH4)2SO4 in in situ leaching for ion-adsorption RE mining caused serious ground and surface water contamination. Anaerobic ammonium oxidation (anammox) was a sustainable in situ technology that can reduce this nitrogen pollution. In this research, in situ, semi in situ, and ex situ method of inoculation that included low-concentration (0.02 mg·L−1) and high-concentration (0.10 mg·L−1) lanthanum (La)(III) were adopted to explore effective start-up strategies for starting up anammox reactors seeded with activated sludge and anammox sludge. The reactors were refrigerated for 30 days at 4 °C to investigate the effects of La(III) during a period of low-temperature. The results showed that the in situ and semi in situ enrichment strategies with the addition of La(III) at a low-concentration La(III) addition (0.02 mg·L−1) reduced the length of time required to reactivate the sludge until it reached a state of stable anammox activity and high nitrogen removal efficiency by 60–71 days. The addition of La(III) promoted the formation of sludge floc with a compact structure that enabled it to resist the adverse effects of low temperature and so to maintain a high abundance of AnAOB and microbacterial community diversity of sludge during refrigeration period. The addition of La(III) at a high concentration caused the cellular percentage of AnAOB to decrease from 54.60 ± 6.19% to 17.35 ± 6.69% during the enrichment and reduced nitrogen removal efficiency to an unrecoverable level to post-refrigeration.


2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.


2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.


2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000039-000046
Author(s):  
Wenli Zhang ◽  
Yipeng Su ◽  
Fred C. Lee

Abstract High power-density and high efficiency are the two driving forces for point-of-load (POL) converters used in portable electronics and other applications where system miniaturization is required. Discrete passive components, especially bulky inductors, have become the bottleneck for downsizing POL converters. Low-temperature sintered Ni-Cu-Zn ferrite tapes for multilayer chip inductors have been widely studied and used in high-frequency power electronics applications. In our previous study, a low-profile, planar inductor substrate with lateral flux pattern was fabricated using mixed commercial low-fire Ni-Cu-Zn ferrite tapes and compatible low temperature co-fired ceramic (LTCC) processing. However, thermal interface material was used between active circuit board and passive layer (ferrite substrate), which increases the total volume of the converter and becomes a potential threat for reliability due to the mismatch of coefficient of thermal expansion among different layers. Additionally, this hybrid integration method requires labor-intensive manual steps which are not compatible with cost-sensitive power electronics market. A fully ceramic-based POL module with integrated multilayer ferrite inductor has been proposed. The circuit and other components are designed to be directly built on top of the multilayer ferrite inductor substrate. This presented work focuses on the development of the multilayer ceramic substrate with embedded planar, lateral-flux inductor by co-firing of ferrite and dielectric tapes with conductor paste. Commercial dielectric LTCC and ferrite tapes were chosen for the fabrication of multilayer ferrite inductor substrate. Different silver pastes were co-fired with ceramic tapes to form the inductor winding. The sintering behavior and compatibility of dielectric, magnetic, and conductive components in one co-firing process was studied in order to realize a cohesive multilayer ceramic substrate. The embedded inductors present lower inductance than pure ferrite inductors sintered alone using the same profile when the output current is smaller than 10 A. The inductance of both types of inductors are very similar when output current is above 15 A. The inductor embedded in dielectric tapes exhibits higher core loss density than its counterpart. Future work will focus on the integration of high current POL module using this developed multilayer ferrite inductor substrate.


2012 ◽  
Vol 1409 ◽  
Author(s):  
Nikhil Modi ◽  
Leonid Tsybeskov ◽  
David J. Lockwood ◽  
Xiao Z. Wu ◽  
Jean Marc Baribeau

ABSTRACTWe report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to ∼ 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.


1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.


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