Photoactivated Metal-Oxide Gas Sensing Nanomesh by Using Nanosphere Lithography

2014 ◽  
Vol 1675 ◽  
pp. 139-144
Author(s):  
Yu-Hsuan Ho ◽  
Tsu-Hung Lin ◽  
Yi-Wen Chen ◽  
Wei-Cheng Tian ◽  
Pei-Kuen Wei ◽  
...  

ABSTRACTA photoactivated ZnO nanomesh with precisely controlled dimensions and geometries is fabricated by using nanosphere lithography process. The nanomesh structures effectively increase the surface-to-volume ratio to improve the sensing response under the same testing gas. And the periodical nanostructures also increase the effective light path and lead to more efficient light activation for gas sensing. With the increase of the photoinduced oxygen ions by UV illumination, a distinguished sensing response is observed at room temperature. In the optimized case, the sensing response (△R/R0) of the ZnO nanomesh at the butanol concentration of 500 ppm is 97.5%, which is 4.54 times higher than the unpatterned one.

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Nishchay A. Isaac ◽  
Johannes Reiprich ◽  
Leslie Schlag ◽  
Pedro H. O. Moreira ◽  
Mostafa Baloochi ◽  
...  

AbstractThis study demonstrates the fabrication of self-aligning three-dimensional (3D) platinum bridges for ammonia gas sensing using gas-phase electrodeposition. This deposition scheme can guide charged nanoparticles to predetermined locations on a surface with sub-micrometer resolution. A shutter-free deposition is possible, preventing the use of additional steps for lift-off and improving material yield. This method uses a spark discharge-based platinum nanoparticle source in combination with sequentially biased surface electrodes and charged photoresist patterns on a glass substrate. In this way, the parallel growth of multiple sensing nodes, in this case 3D self-aligning nanoparticle-based bridges, is accomplished. An array containing 360 locally grown bridges made out of 5 nm platinum nanoparticles is fabricated. The high surface-to-volume ratio of the 3D bridge morphology enables fast response and room temperature operated sensing capabilities. The bridges are preconditioned for ~ 24 h in nitrogen gas before being used for performance testing, ensuring drift-free sensor performance. In this study, platinum bridges are demonstrated to detect ammonia (NH3) with concentrations between 1400 and 100 ppm. The sensing mechanism, response times, cross-sensitivity, selectivity, and sensor stability are discussed. The device showed a sensor response of ~ 4% at 100 ppm NH3 with a 70% response time of 8 min at room temperature.


2012 ◽  
Vol 161 (1) ◽  
pp. 292-297 ◽  
Author(s):  
Jiali Zhai ◽  
Lingling Wang ◽  
Dejun Wang ◽  
Yanhong Lin ◽  
Dongqing He ◽  
...  

2018 ◽  
Vol 264 ◽  
pp. 353-362 ◽  
Author(s):  
Maddaka Reddeppa ◽  
Byung-Guon Park ◽  
Moon-Deock Kim ◽  
Koteswara Rao Peta ◽  
Nguyen Duc Chinh ◽  
...  

Sensors ◽  
2020 ◽  
Vol 20 (19) ◽  
pp. 5701
Author(s):  
Nguyen Manh Hung ◽  
Chuong V. Nguyen ◽  
Vinaya Kumar Arepalli ◽  
Jeha Kim ◽  
Nguyen Duc Chinh ◽  
...  

Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS strongly depend on its surface defects. Therefore, understanding the effects of its surface defects on its electronic and gas-sensing properties is a key factor in developing low-temperature SnS gas sensors. Herein, using thin SnS films annealed at different temperatures, we demonstrate that SnS exhibits n-type semiconducting behavior upon the appearance of S vacancies. Furthermore, the presence of S vacancies imparts the n-type SnS sensor with better sensing performance under UV illumination at room temperature (25 °C) than that of a p-type SnS sensor. These results are thoroughly investigated using various experimental analysis techniques and theoretical calculations using density functional theory. In addition, n-type SnS deposited on a polyimide substrate can be used to fabricate high-stability flexible sensors, which can be further developed for real applications.


2019 ◽  
Vol 6 (1) ◽  
pp. 176-183 ◽  
Author(s):  
Jing Wang ◽  
Mingying Yu ◽  
Xian Li ◽  
Yi Xia

PSS-functionalized ZnO nanowires exhibited a highly sensitive, fast, reversible and stable optoelectronic response to NO2 under UV illumination.


2014 ◽  
Vol 5 ◽  
pp. 1836-1841 ◽  
Author(s):  
Sunghoon Park ◽  
Soohyun Kim ◽  
Wan In Lee ◽  
Kyoung-Kook Kim ◽  
Chongmu Lee

Reports of the gas sensing properties of ZnSe are few, presumably because of the decomposition and oxidation of ZnSe at high temperatures. In this study, ZnSe nanowires were synthesized by the thermal evaporation of ZnSe powders and the sensing performance of multiple-networked ZnSe nanowire sensors toward NO2 gas was examined. The results showed that ZnSe might be a promising gas sensor material if it is used at room temperature. The response of the ZnSe nanowires to 50 ppb–5 ppm NO2 at room temperature under dark and UV illumination conditions were 101–102% and 113–234%, respectively. The responses of the ZnSe nanowires to 5 ppm NO2 increased from 102 to 234% with increasing UV illumination intensity from 0 to 1.2 mW/cm2. The response of the ZnSe nanowires was stronger than or comparable to that of typical metal oxide semiconductors reported in the literature, which require higher NO2 concentrations and operate at higher temperatures. The origin of the enhanced response of the ZnSe nanowires towards NO2 under UV illumination is also discussed.


2016 ◽  
Vol 16 (10) ◽  
pp. 10346-10350 ◽  
Author(s):  
Nguyen Minh Vuong ◽  
Nguyen Duc Chinh ◽  
Truong Thi Hien ◽  
Nguyen Duc Quang ◽  
Dahye Kim ◽  
...  

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 888 ◽  
Author(s):  
Tony Granz ◽  
Marius Temming ◽  
Jiushuai Xu ◽  
Qomaruddin ◽  
Cristian Fabrega ◽  
...  

UV-light emitting diodes (395–278 nm) were used to investigate the gas sensing attributes of planar and nanostructured ZnO/AlN thin films on Si substrate towards NO2 at room temperature. A significant increased sensitivity ((Rg − Ra)/Ra = 65.3 ppm NO2 in air) and a strong reduction in recovery time (Trec = 14 min) were already observed for the planar ZnO/AlN thin films under UV-B (305 nm) irradiation compared to the other UV wavelengths, while the device showed no obvious response in dark. By enlarging the surface-to-volume ratio of the sensors (i.e., creating nanostructured ZnO/AlN thin films), an increased response time is expected to be observed.


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