UV-illumination room-temperature gas sensing activity of carbon-doped ZnO microspheres

2012 ◽  
Vol 161 (1) ◽  
pp. 292-297 ◽  
Author(s):  
Jiali Zhai ◽  
Lingling Wang ◽  
Dejun Wang ◽  
Yanhong Lin ◽  
Dongqing He ◽  
...  
2007 ◽  
Vol 99 (12) ◽  
Author(s):  
H. Pan ◽  
J. B. Yi ◽  
L. Shen ◽  
R. Q. Wu ◽  
J. H. Yang ◽  
...  

2011 ◽  
Vol 105 (2) ◽  
pp. 387-392 ◽  
Author(s):  
Liang Peng ◽  
Qingru Zeng ◽  
Huijuan Song ◽  
Pufeng Qin ◽  
Ming Lei ◽  
...  

2018 ◽  
Vol 264 ◽  
pp. 353-362 ◽  
Author(s):  
Maddaka Reddeppa ◽  
Byung-Guon Park ◽  
Moon-Deock Kim ◽  
Koteswara Rao Peta ◽  
Nguyen Duc Chinh ◽  
...  

Sensors ◽  
2020 ◽  
Vol 20 (19) ◽  
pp. 5701
Author(s):  
Nguyen Manh Hung ◽  
Chuong V. Nguyen ◽  
Vinaya Kumar Arepalli ◽  
Jeha Kim ◽  
Nguyen Duc Chinh ◽  
...  

Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS strongly depend on its surface defects. Therefore, understanding the effects of its surface defects on its electronic and gas-sensing properties is a key factor in developing low-temperature SnS gas sensors. Herein, using thin SnS films annealed at different temperatures, we demonstrate that SnS exhibits n-type semiconducting behavior upon the appearance of S vacancies. Furthermore, the presence of S vacancies imparts the n-type SnS sensor with better sensing performance under UV illumination at room temperature (25 °C) than that of a p-type SnS sensor. These results are thoroughly investigated using various experimental analysis techniques and theoretical calculations using density functional theory. In addition, n-type SnS deposited on a polyimide substrate can be used to fabricate high-stability flexible sensors, which can be further developed for real applications.


2011 ◽  
Vol 5 (12) ◽  
pp. 447-449 ◽  
Author(s):  
H. S. Hsu ◽  
Y. Tung ◽  
Y. J. Chen ◽  
M. G. Chen ◽  
J. S. Lee ◽  
...  

2014 ◽  
Vol 1675 ◽  
pp. 139-144
Author(s):  
Yu-Hsuan Ho ◽  
Tsu-Hung Lin ◽  
Yi-Wen Chen ◽  
Wei-Cheng Tian ◽  
Pei-Kuen Wei ◽  
...  

ABSTRACTA photoactivated ZnO nanomesh with precisely controlled dimensions and geometries is fabricated by using nanosphere lithography process. The nanomesh structures effectively increase the surface-to-volume ratio to improve the sensing response under the same testing gas. And the periodical nanostructures also increase the effective light path and lead to more efficient light activation for gas sensing. With the increase of the photoinduced oxygen ions by UV illumination, a distinguished sensing response is observed at room temperature. In the optimized case, the sensing response (△R/R0) of the ZnO nanomesh at the butanol concentration of 500 ppm is 97.5%, which is 4.54 times higher than the unpatterned one.


2020 ◽  
Vol 52 (11) ◽  
Author(s):  
K. Radhi Devi ◽  
G. Selvan ◽  
M. Karunakaran ◽  
I. Loyola Poul Raj ◽  
A. F. Abd El-Rehim ◽  
...  

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