Electrosynthesized Polystyrene Sulphonate-Capped Zinc Oxide Nanoparticles as Electrode Modifiers for Sensing Devices

2014 ◽  
Vol 1675 ◽  
pp. 15-20 ◽  
Author(s):  
Maria C. Sportelli ◽  
Diana Hötger ◽  
Rosaria A. Picca ◽  
Kyriaki Manoli ◽  
Christine Kranz ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Synthesis Method ◽  
Semiconductor Layer ◽  
Spectroscopic Techniques ◽  
Organic Field Effect Transistors ◽  
Si Substrates ◽  
Calcination Temperatures ◽  
Composite Layers ◽  
Current Densities ◽  
Polystyrene Sulphonate

ABSTRACTZnO nanoparticles were prepared by a green electrochemical synthesis method applying low current densities followed by a thermal treatment. Sodium polystyrene sulphonate (PSS) was used as stabilizer in the electrolytic aqueous medium due to its biocompatibility and stability. The as-prepared nanocolloids were then annealed to improve their stability, and then converted via hydroxide species into stoichiometric oxide. Different calcination temperatures were studied. ZnO@PSS nanomaterials were deposited onto SiO2/Si substrates, in part in combination with an organic semiconductor layer to evaluate their influence on organic field effect transistors (OFETs). All nanomaterials and composite layers were characterized by morphological and spectroscopic techniques. Promising results regarding the use of ZnO@PSS in OFETs could be demonstrated.

AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2-b][1]benzothiophene Semiconductor Layer

2012 ◽  
Vol 134 (40) ◽  
pp. 16548-16550 ◽  
Author(s):  
Atefeh Y. Amin ◽  
Artoem Khassanov ◽  
Knud Reuter ◽  
Timo Meyer-Friedrichsen ◽  
Marcus Halik
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors

Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Faruk Altan Yildirim ◽  
Ronald Meixner ◽  
Robert Roman Schliewe ◽  
Wolfgang Bauhofer ◽  
Holger Goebel ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Volume Resistivity ◽  
Dielectric Materials ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Metal Insulator Metal

ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates

2019 ◽  
Vol 7 (28) ◽  
pp. 8599-8606 ◽  
Author(s):  
Yongsuk Choi ◽  
Hunyoung Bark ◽  
Boseok Kang ◽  
Myeongjae Lee ◽  
BongSoo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Synthesis Method ◽  
Logic Gates ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Wafer Scale

We developed a patternable synthesis method of wafer-scale NbS2, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates.

scholarly journals Effect of contact resistance in organic field‐effect transistors

Nano Select ◽  
2021 ◽  
Author(s):  
Yanjun Shi ◽  
Jie Liu ◽  
Yuanyuan Hu ◽  
Wenping Hu ◽  
Lang Jiang
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
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