Single-Crystalline Silicon Nanowire Array-Based Photoelectrochemical Cells

2009 ◽  
Vol 156 (5) ◽  
pp. K77 ◽  
Author(s):  
Enrique A. Dalchiele ◽  
Francisco Martín ◽  
Dietmar Leinen ◽  
Ricardo E. Marotti ◽  
José Ramón Ramos-Barrado
Nano Letters ◽  
2016 ◽  
Vol 16 (11) ◽  
pp. 6960-6966 ◽  
Author(s):  
Alon Kosloff ◽  
Omri Heifler ◽  
Eran Granot ◽  
Fernando Patolsky

2011 ◽  
Vol 26 (9) ◽  
pp. 1091-1099 ◽  
Author(s):  
Ana Cuevas ◽  
Enrique Ariel Dalchiele ◽  
Ricardo Marotti ◽  
Dietmar Leinen ◽  
José Ramón Ramos-Barrado ◽  
...  

Abstract


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Yunshan Zhao ◽  
Xiangjun Liu ◽  
Ashutosh Rath ◽  
Jing Wu ◽  
Baowen Li ◽  
...  

2007 ◽  
Vol 129 (41) ◽  
pp. 12344-12345 ◽  
Author(s):  
Adrian P. Goodey ◽  
Sarah M. Eichfeld ◽  
Kok-Keong Lew ◽  
Joan M. Redwing ◽  
Thomas E. Mallouk

2012 ◽  
Vol 1408 ◽  
Author(s):  
Arif S. Alagoz ◽  
Tansel Karabacak

ABSTRACTMetal-assisted chemical etching is a simple and low-cost silicon nanowire fabrication method which allows control of nanowire diameter, length, shape and orientation. In this work, we fabricated well-ordered silicon nanowire array by patterning gold thin film by nanosphere lithography and etching single crystalline silicon wafer by metal-assisted chemical etching technique. We investigated relation between etched solution concentration and nanowire morphology, wafer crystal orientation, etching rate. This well-ordered silicon nanowires arrays have the potential applications in many fields but especially next generation energy related applications from solar cells to lithium-ion batteries.


Author(s):  
Inkyu Park ◽  
Zhiyong Li ◽  
Albert P. Pisano ◽  
R. Stanley Williams

In this paper, we present numerical and experimental studies on the nanoscale Joule heating along the single crystalline silicon nanowires. 50–100nm wide single crystalline silicon nanowires are heated via Joule heating by applying an electrical potential across them. Numerical simulation result predicts an extremely localized temperature field by resistive heating of silicon nanowire. We experimentally verified this highly localized heating of silicon nanowires by AFM imaging of localized thermal ablation of polytetrafluoroethylene (PTFE) thin film. This result implies potential applications of silicon nanowires as nanoscale heaters for the generation of highly localized temperature fields.


2010 ◽  
Vol 114 (9) ◽  
pp. 3798-3803 ◽  
Author(s):  
V. A. Sivakov ◽  
G. Brönstrup ◽  
B. Pecz ◽  
A. Berger ◽  
G. Z. Radnoczi ◽  
...  

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