4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

2014 ◽  
Vol 1693 ◽  
Author(s):  
B. Bérenguier ◽  
L. Ottaviani ◽  
S. Biondo ◽  
O. Palais ◽  
M. Lazar ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Spectral Sensitivity ◽  
Room Temperature ◽  
Charge Trapping ◽  
Hysteresis Effect ◽  
Harsh Environments ◽  
Experimental Room ◽  
Influence Of Temperature

ABSTRACT4H-SiC p+n photodiodes based on ultrathin-junctions have been fabricated with distinct processes for the p+-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation. Spectral sensitivity measurements were performed at several temperatures from room temperature up to 340°C, with incident wavelengths ranging from 200 to 400 nm. Both responses are characterized by a stability between 200 and 270 nm, and a important increase with temperature between 270 and 380 nm. This fact has to be related to the two different kinds of optical absorption phenomena in SiC with respect to the wavelength, which are direct and indirect (phonon assisted) transitions. When decreasing the temperature, we noticed a hysteresis effect, which could be due to charge trapping by temperature activated defects. After strong proton and electron irradiations, the diodes showed a stability of the response below 270 nm, making them suitable for use in harsh environments. Simulation was performed at room temperature, with a good correlation between simulated and experimental room temperature curves.

4H-SiC P+N UV Photodiodes for Space Applications

2015 ◽  
Vol 821-823 ◽  
pp. 644-647 ◽  
Author(s):  
B. Berenguier ◽  
Laurent Ottaviani ◽  
Stéphane Biondo ◽  
Mihai Lazar ◽  
Frédéric Milesi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Spectral Sensitivity ◽  
Hysteresis Effect ◽  
General Increase ◽  
Incident Wavelength ◽  
Space Applications ◽  
Boron Doped ◽  
Plasma Immersion Ion Implantation

Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral sensitivity of Al doped photodiodes increase for incident wavelength higher than 270 nm, and are very stable below. Boron doped irradiated photodiodes show a general increase of the photoresponse for all wavelengths. In both cases, an hysteresis effect is observable when with the temperature. Results are presented and discussed.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

scholarly journals Recent Observations on the Mechanical Properties of Polymer Networks

1971 ◽  
Vol 44 (5) ◽  
pp. 1256-1272 ◽  
Author(s):  
P. Thirion ◽  
R. Chasset
Keyword(s):  
Crosslink Density ◽  
Room Temperature ◽  
Dynamic Properties ◽  
Polymer Networks ◽  
The Other ◽  
Dilution Ratio ◽  
Chain Entanglement ◽  
Influence Of Temperature ◽  
Terminal Zone ◽  
Crosslinking Agents

Abstract The influence of temperature, elongation, swelling or dilution ratio, crosslink density, nature of the polymers, and crosslinking agents on the dynamic properties, creep and relaxation of polymer networks is surveyed in the terminal region of the spectrum. Whereas the deformation does not change the relaxation kinetics in large ranges of extension, the crosslink density acts as a reduced variable apparently accelerating uniformly the viscoelastic processes beyond the glass transition. The other possible reductions ‘time-temperature’ and ‘time—swelling’ do not necessarily seem related to the variations of free volume. From the viewpoint of the explanation of the relaxation mechanisms in the terminal zone, the fact that the equilibrium of loosely crosslinked elastomers would only virtually be reached after several years at room temperature seem in better agreement with chain entanglement effects, either trapped or not by the permanent network, than with the dissociation of secondary linkages.

scholarly journals Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

2007 ◽  
Vol 101 (12) ◽  
pp. 124313 ◽  
Author(s):  
M. Yang ◽  
T. P. Chen ◽  
J. I. Wong ◽  
C. Y. Ng ◽  
Y. Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Low Energy ◽  
Ge Nanocrystals

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Optical Transitions in Chalcogenide Glasses From the Point of View of a Barrier-Cluster Model

2008 ◽  
Vol 39-40 ◽  
pp. 253-256
Author(s):  
Ivan Baník
Keyword(s):  
Optical Absorption ◽  
Low Temperatures ◽  
Cluster Model ◽  
Chalcogenide Glasses ◽  
Temperature Shift ◽  
Point Of View ◽  
Optical Transitions ◽  
Influence Of Temperature ◽  
Exponential Tails ◽  
Influence Of Temperature On

A barrier-cluster model of chalcogenide glasses is employed to analyze optical transitions near the absorption edge. The influence of temperature on the optical absorption is studied. The model is used to explain the temperature shift of exponential tails of the optical absorption and the temperature dependence of the optical forbidden-band width at low temperatures.

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

scholarly journals Adhesive-Free Bonding of Monolithic Sapphire for Pressure Sensing in Extreme Environments

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2712 ◽  
Author(s):  
Jihaeng Yi
Keyword(s):  
Room Temperature ◽  
Extreme Environments ◽  
Optical Signal ◽  
Harsh Environments ◽  
Free Space Optics ◽  
Pressure Sensing ◽  
Space Optics ◽  
Fabry Perot ◽  
Deflection Theory

This paper presents a monolithic sapphire pressure sensor that is constructed from two commercially available sapphire wafers through a combination of reactive-ion etching and wafer bonding. A Fabry–Perot (FP) cavity is sealed fully between the adhesive-free bonded sapphire wafers and thus acts as a pressure transducer. A combination of standard silica fiber, bonded sapphire wafers and free-space optics is proposed to couple the optical signal to the FP cavity of the sensor. The pressure in the FP cavity is measured by applying both white-light interferometry and diaphragm deflection theory over a range of 0.03 to 3.45 MPa at room temperature. With an all-sapphire configuration, the adhesive-free bonded sapphire sensor is expected to be suitable for in-situ pressure measurements in extreme harsh environments.

Influence of Temperature and Oxygen Concentration on the Radiation Induced Oxidation of Phenylalanine

1995 ◽  
Vol 50 (9) ◽  
pp. 864-870 ◽  
Author(s):  
P. Krajnik ◽  
R. M. Quint ◽  
S. Solar ◽  
N. Getoff ◽  
G. Sontag
Keyword(s):  
Oxygen Concentration ◽  
Room Temperature ◽  
Degradation Process ◽  
Storage Conditions ◽  
Food Storage ◽  
Reaction Conditions ◽  
Influence Of Temperature ◽  
Influence Of Temperature On ◽  
Radiation Induced ◽  
Induced Changes

AbstractThe formation of tyrosine isomers by γ-radiolysis of neutral aqueous phenylalanine solutions was found to be strongly dependent on oxygen concentration and temperature. Changing the dose rate did not influence the degradation process. In the presence of 0.25 x 10-3 mol dm-3 oxygen at room temperature the yields of o-tyrosine as well as of m- and p-tyrosine drop from G(o-Tyr) = 0.5 and G(m-Tyr) = G(p-Tyr) = 0.4 at a dose of 0.3 kGy to 0.18 and 0.16 at 2.5 kGy, respectively. In solutions containing 1.25 x 10-3 mol dm-3 oxygen the initial yields remain unchanged but decrease at 2.5 kGy only to G(o-Tyr) = 0.3 and G(m-Tyr) = G(p-Tyr) = 0.20. Under the latter reaction conditions also 3,4-dihydroxyphenylalanine was found.Samples irradiated in frozen state did not show remarkable radiolysis of phenylalanine and tyrosine formation. In the range between 5 and 20°C no essential influence of temperature on the phenylalanine radiolysis and tyrosine yields was observable. The obtained results are important for methods using the tyrosine yields as markers for the detection of irradiated food. Storage conditions and irradiation temperature play an essential role on radiation induced changes of food.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

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