Fabrication of Organic Thin Film Transistor Arrays on Plastic and Paper Substrate for Flexible Display Application

2014 ◽  
Vol 1628 ◽  
Author(s):  
Y. Fujisaki ◽  
Y. Nakajima ◽  
M. Nakata ◽  
H. Tsuji ◽  
T. Yamamoto

ABSTRACTOrganic thin-film transistors (OTFTs) are the most promising candidates for flexible electronics owing to their flexible structures, the simplicity of processing large-area devices, and excellent compatibility with flexible substrates. To date, many studies have been reported that have aimed at developing a wide range of plastic electronics such as flexible displays, sensors. In this paper, we discuss our recent work, focusing on OTFT arrays and their application to flexible display. An active-matrix (AM) backplane using a low-temperature cross-linkable olefin-type polymer as the gatedielectric and an air-stable DNTT as the organic semiconductor (OSC) was successfully fabricated on a plastic substrate. The short-channel TFT array exhibited a high hole mobility of over 0.5 cm2/Vs, a low subthreshold slope of 0.31, and excellent environmental and operational stability. A 5-inch flexible OLED display exhibited a high luminescence of over 300 cd/m2 by driving of the DNTT-based OTFTs. Solution-processed OTFTs are also attracting considerable attention owing to both their simple manufacturing process and excellent transistor performance. We present a simple patterning process for a solution-processable OSC that can be used to develop a high-mobility short-channel TFT array. The OSC film was directly patterned on the confined active channel region by a simple lamination coating technique and the resulting TFTs showed a high mobility of up to 1.3 cm2/Vs. In the final section, we report on eco-friendly paper-based organic TFT array. A transparent cellulose nanofibers paper was firstly applied to a flexible substrate for the TFT backplane. A solution-processed TFT on the transparent paper exhibited a high mobility exceeding 1 cm2/Vs, good air stability, and excellent mechanical stability.

2007 ◽  
Author(s):  
He Yan ◽  
Shaofeng Lu ◽  
Yan Zheng ◽  
Philippe Inagaki ◽  
Antonio Facchetti ◽  
...  

2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.


MRS Advances ◽  
2015 ◽  
Vol 1 (10) ◽  
pp. 645-650 ◽  
Author(s):  
Tomi Hassinen ◽  
Ari Alastalo ◽  
Kim Eiroma ◽  
Tiia-Maria Tenhunen ◽  
Vesa Kunnari ◽  
...  

ABSTRACTWe report fully-printed top-gate-bottom-contact organic thin-film transistors using substrates prepared from cellulose nanofibers and commercially available printing inks to fabricate the devices. Gravure printing was used to coat the substrate with a polymer resist to decrease the surface roughness and close the surface. Transistor structures were fabricated using inkjet printing for conductors and gravure printing for the dielectric and semiconducting layers. The obtained transistor performance is compared to that of similar transistors on plastic substrate.


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