Short-channel, high-mobility organic thin-film transistors with alkylated dinaphthothienothiophene

2013 ◽  
Vol 10 (11) ◽  
pp. 1632-1635 ◽  
Author(s):  
Masatoshi Kitamura ◽  
Yasutaka Kuzumoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel

Low-cost lithographically patterned source/drain bottom contacts for high mobility p-type organic thin film transistors

2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Bottom Contact ◽  
Gold Metallization

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.

Suppression of short channel effect in organic thin film transistors

2007 ◽  
Vol 91 (11) ◽  
pp. 113508 ◽  
Author(s):  
K. Tukagoshi ◽  
F. Fujimori ◽  
T. Minari ◽  
T. Miyadera ◽  
T. Hamano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

scholarly journals A Simple Structure Conjugated Polymer for High Mobility Organic Thin Film Transistors Processed from Nonchlorinated Solvent

2019 ◽  
Vol 6 (24) ◽  
pp. 1902412 ◽  
Author(s):  
Zhongli Wang ◽  
Xianneng Song ◽  
Yu Jiang ◽  
Jidong Zhang ◽  
Xi Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Simple Structure ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Five-ring-fused asymmetric thienoacenes for high mobility organic thin-film transistors: the influence of the position of the S atom in the terminal thiophene ring

2019 ◽  
Vol 7 (12) ◽  
pp. 3656-3664 ◽  
Author(s):  
Keqiang He ◽  
Shujun Zhou ◽  
Weili Li ◽  
Hongkun Tian ◽  
Qingxin Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thiophene Ring ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Two isomeric asymmetric thienoacenes are designed and synthesized; the syn-isomer demonstrates both μsat and μlin above 10 cm2 V−1 s−1.

Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

2011 ◽  
Vol 14 (8) ◽  
pp. H333 ◽  
Author(s):  
Minseok Kim ◽  
In-Kyu You ◽  
Hyun Han ◽  
Soon-Won Jung ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Offset Printing ◽  
Short Channel

High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing

2013 ◽  
Vol 14 (12) ◽  
pp. 3213-3221 ◽  
Author(s):  
Robert Hofmockel ◽  
Ute Zschieschang ◽  
Ulrike Kraft ◽  
Reinhold Rödel ◽  
Nis Hauke Hansen ◽  
...  
Keyword(s):  
Thin Film ◽  
Small Molecule ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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