scholarly journals Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures

2014 ◽  
Vol 1659 ◽  
pp. 143-148
Author(s):  
J. Anaya ◽  
A. Torres ◽  
J. Jiménez ◽  
A. Rodríguez ◽  
T. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electromagnetic Field ◽  
Raman Spectrum ◽  
Laser Beam ◽  
Group Iv ◽  
Outer Shell ◽  
High Quality

ABSTRACTThe control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam.

scholarly journals Raman spectrum of group IV nanowires: influence of temperature

2011 ◽  
Vol 1305 ◽  
Author(s):  
J. Anaya ◽  
C. Prieto ◽  
J. Souto ◽  
J. Jiménez ◽  
A. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Laser Beam ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Experimental Conditions ◽  
Influence Of Temperature ◽  
Spectrum Of Group ◽  
Group Iv Semiconductor ◽  
Heat Transport Equation

ABSTRACTGroup IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed.

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

Raman Spectroscopy of Group IV Nanostructured Semiconductors: Influence of Size and Temperature

2008 ◽  
Vol 1145 ◽  
Author(s):  
Alfredo Torres ◽  
Oscar Martínez ◽  
Carmelo Prieto ◽  
Juan Jimenez ◽  
Andrés Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Heat Dissipation ◽  
Group Iv ◽  
Si Nanowires ◽  
Phonon Confinement ◽  
Experimental Conditions ◽  
Potential Applications ◽  
As Stress ◽  
Non Destructive

AbstractGroup IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

scholarly journals Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

2018 ◽  
Vol 123 (11) ◽  
pp. 114302 ◽  
Author(s):  
J. L. Pura ◽  
J. Anaya ◽  
J. Souto ◽  
A. C. Prieto ◽  
A. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electromagnetic Field ◽  
Field Enhancement ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Group Iv Semiconductor

scholarly journals Laser Induced Heating of Group IV Nanowires

2012 ◽  
Vol 1404 ◽  
Author(s):  
J. Anaya ◽  
A. Torres ◽  
A. Martin-Martín ◽  
J. Jiménez ◽  
A. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectrum ◽  
Laser Beam ◽  
Thermal Effects ◽  
Spectroscopic Data ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Spectral Shape ◽  
Laser Beams ◽  
Element Analysis ◽  
Excitation Laser

ABSTRACTSemiconductor nanowires (NWs) are fundamental structures for nanoscale devices. The excitation of NWs with laser beams results in thermal effects that can substantially change the spectral shape of the spectroscopic data. In particular, the interpretation of the Raman spectrum is greatly influenced by excitation induced temperature. A study of the interaction of the NWs with the excitation laser beam is essential to interpret the spectra. We present herein a finite element analysis of the interaction between the laser beam and the NWs. The resultas are applied to the interpretation of the Raman spectrum of bundles of NWs.

Raman Studies of the Adduct Structure of Cl2 and Br2 with Piaselenole

1980 ◽  
Vol 34 (6) ◽  
pp. 636-638
Author(s):  
J. J. Blaha ◽  
W. Brittain ◽  
C. E. Meloan ◽  
W. G. Fateley
Keyword(s):  
Molecular Structure ◽  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Long Time

The affinity of 2,1,3-benzoselenadiazole, commonly called piaselenole, for chlorine and bromine molecules has been known for a long time. Raman spectroscopy provides a very interesting method for determining the molecular structure of these 1:1 adducts. The Raman spectrum shows the Cl2 and Br2 molecules in the adduct remain as a dimer molecule.

Sign in / Sign up

Export Citation Format

Share Document