scholarly journals Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

2018 ◽  
Vol 123 (11) ◽  
pp. 114302 ◽  
Author(s):  
J. L. Pura ◽  
J. Anaya ◽  
J. Souto ◽  
A. C. Prieto ◽  
A. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electromagnetic Field ◽  
Field Enhancement ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Group Iv Semiconductor

scholarly journals Raman spectrum of group IV nanowires: influence of temperature

2011 ◽  
Vol 1305 ◽  
Author(s):  
J. Anaya ◽  
C. Prieto ◽  
J. Souto ◽  
J. Jiménez ◽  
A. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Laser Beam ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Experimental Conditions ◽  
Influence Of Temperature ◽  
Spectrum Of Group ◽  
Group Iv Semiconductor ◽  
Heat Transport Equation

ABSTRACTGroup IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed.

scholarly journals Raman spectroscopy study of group IV semiconductor nanowires

2010 ◽  
Vol 8 ◽  
pp. 78-83 ◽  
Author(s):  
J. Anaya ◽  
A. Torres ◽  
A. Martín-Martín ◽  
O. Martínez ◽  
A.C. Prieto ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Spectroscopy Study ◽  
Group Iv Semiconductor

scholarly journals Fabrication of Au and Ag – Coated AFM Probes for Tip-Enhanced Raman Spectroscopy

2021 ◽  
Vol 2015 (1) ◽  
pp. 012013
Author(s):  
L S Basalaeva ◽  
N N Kurus ◽  
E E Rodyakina ◽  
K V Anikin ◽  
A G Milekhin
Keyword(s):  
Raman Spectroscopy ◽  
Electromagnetic Field ◽  
Localized Surface Plasmon Resonance ◽  
Metal Cluster ◽  
Field Enhancement ◽  
Optical Characterization ◽  
Localized Surface Plasmon ◽  
Tip Enhanced Raman Spectroscopy ◽  
Shape And Size

Abstract In this work, approaches for fabrication metal coated probes for Tip Enhanced Raman Spectroscopy (TERS) are considered. It was proposed to use optical characterization of probes to achieve the effective TERS of semiconductor nanoobjects. The shape and size of the metal cluster at the tip apex determines the position of the localized surface plasmon resonance, the electromagnetic field enhancement and, thus, TERS performance. The possibility of optimizing the characteristics of the probes for TERS studies of nanoobjects has been investigated.

scholarly journals Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures

2014 ◽  
Vol 1659 ◽  
pp. 143-148
Author(s):  
J. Anaya ◽  
A. Torres ◽  
J. Jiménez ◽  
A. Rodríguez ◽  
T. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electromagnetic Field ◽  
Raman Spectrum ◽  
Laser Beam ◽  
Group Iv ◽  
Outer Shell ◽  
High Quality

ABSTRACTThe control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam.

scholarly journals Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

2011 ◽  
Vol 6 (1) ◽  
pp. 113 ◽  
Author(s):  
Tao Xu ◽  
Julien Sulerzycki ◽  
Jean Nys ◽  
Gilles Patriarche ◽  
Bruno Grandidier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Group Iv Semiconductor

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

scholarly journals Electromagnetic field emitted by core–shell semiconductor nanowires driven by an alternating current

2021 ◽  
Vol 130 (3) ◽  
pp. 034301
Author(s):  
Miguel Urbaneja Torres ◽  
Kristjan Ottar Klausen ◽  
Anna Sitek ◽  
Sigurdur I. Erlingsson ◽  
Vidar Gudmundsson ◽  
...  
Keyword(s):  
Electromagnetic Field ◽  
Alternating Current ◽  
Semiconductor Nanowires ◽  
Core Shell
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