CdSe/ZnS Quantum Dot-to-ZnO Nanowires Charge Transfer Dynamics for Enhanced Efficiency Quantum Dot-Sensitized Solar Cells

2014 ◽  
Vol 1638 ◽  
Author(s):  
Bahareh Sadeghimakki ◽  
Navid Mohammad Sadeghi. Jahed ◽  
Bita Janfeshan ◽  
Shadi Dashmiz ◽  
Siva Sivoththaman

ABSTRACTCore-shell quantum dots (QDs) with enhanced photostability compared with bare QDs are promising light absorbers for solar cell applications. In this work, electron injection from excited CdSe/ZnS QDs to Zinc Oxide (ZnO) nanowires (NWs) prepared by two techniques were demonstrated. Arrays of ZnO NWs were fabricated by hydrothermal growth and etching. ZnO NWs were sensitized with hydrophobically ligated colloidal CdSe/ZnS QDs. The electron transfer dynamic in QD/ZnO NW architecture was examined using photoluminescence (PL) and decay lifetime analyses. The quenching of the QD emission peak and lowered average lifetime in QD/ZnO NW architecture confirms the deactivation of the excited QDs via electron transfer to ZnO NWs. Electron transfer was enhanced by using smaller QDs. This study provides insight on charge transfer dynamics at the QD/ZnO NW interface in order to engineer high performance quantum dot sensitized solar cells (QDSSCs).

2018 ◽  
Vol 122 (9) ◽  
pp. 5161-5170 ◽  
Author(s):  
Muhammad T. Sajjad ◽  
Jinhyung Park ◽  
Dorian Gaboriau ◽  
Jonathon R. Harwell ◽  
Fabrice Odobel ◽  
...  

2017 ◽  
Vol 9 (47) ◽  
pp. 41104-41110 ◽  
Author(s):  
Jin Hyuck Heo ◽  
Min Hyuk Jang ◽  
Min Ho Lee ◽  
Dong Hee Shin ◽  
Do Hun Kim ◽  
...  

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.


2018 ◽  
Vol 435 ◽  
pp. 666-675 ◽  
Author(s):  
Ikkurthi Kanaka Durga ◽  
S. Srinivasa Rao ◽  
Araveeti Eswar Reddy ◽  
Chandu V.V.M. Gopi ◽  
Hee-Je Kim

2017 ◽  
Vol 41 (5) ◽  
pp. 1914-1917 ◽  
Author(s):  
Young-Seok Lee ◽  
Chandu V. V. M. Gopi ◽  
Araveeti Eswar Reddy ◽  
Chandu Nagaraju ◽  
Hee-Je Kim

A Cu–ZnS passivation layer effectively suppresses the charge recombination and increases the light harvesting in QDSSCs.


Nanoscale ◽  
2014 ◽  
Vol 6 (6) ◽  
pp. 3296 ◽  
Author(s):  
Veerappan Ganapathy ◽  
Eui-Hyun Kong ◽  
Yoon-Cheol Park ◽  
Hyun Myung Jang ◽  
Shi-Woo Rhee

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