TiO2 Nanowires as a Wide Bandgap Dirac Material: a numerical study of impurity scattering and Anderson disorder

2014 ◽  
Vol 1659 ◽  
pp. 187-191
Author(s):  
Gabriele Penazzi ◽  
Peter Deák ◽  
Bálint Aradi ◽  
Tim Wehling ◽  
Alessio Gagliardi ◽  
...  

ABSTRACTDirac materials are characterized by exceptional mobility, orders of magnitude higher than any semiconductor, due to the massless pseudorelativistic nature of the Dirac fermions. These systems being semimetallic, the lack of a genuine band-gap poses a serious limitation to their possible applications in electronics. We recently demonstrated that thin TiO2 nanowires can exhibit 1D Dirac states similar to metallic carbon nanotubes, with the crucial difference that these states lie inside the conduction band in proximity of a wide band gap. We analyze the robustness of the Dirac states respect to an Anderson disorder model and substitutional impurity and compare to different one dimensional systems. The results suggest that thin anatase TiO2 nanowires can be a promising candidate material for switching devices.

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 9106-9111 ◽  
Author(s):  
Sijin Sung ◽  
Sang-Hoon Lee ◽  
Paengro Lee ◽  
Jingul Kim ◽  
Heemin Park ◽  
...  

We report new wide band gap engineering for graphene using slow Cs+ ions, which allows both fine-tuning and on–off switching capability of the band gap in a range suitable for most applications sustaining the nature of Dirac fermions.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  

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