Band modification of graphene by using slow Cs+ ions

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 9106-9111 ◽  
Author(s):  
Sijin Sung ◽  
Sang-Hoon Lee ◽  
Paengro Lee ◽  
Jingul Kim ◽  
Heemin Park ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Fine Tuning ◽  
Dirac Fermions ◽  
Wide Band Gap ◽  
Band Gap Engineering ◽  
Cs Ions

We report new wide band gap engineering for graphene using slow Cs+ ions, which allows both fine-tuning and on–off switching capability of the band gap in a range suitable for most applications sustaining the nature of Dirac fermions.

scholarly journals Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1128
Author(s):  
Armin Barthel ◽  
Joseph Roberts ◽  
Mari Napari ◽  
Martin Frentrup ◽  
Tahmida Huq ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Atomic Layer ◽  
Band Gap Energy ◽  
Wide Band Gap ◽  
Band Gap Engineering ◽  
Layer Deposition ◽  
Solar Blind ◽  
High Band

The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)2O3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(TixGa1−x)2O3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ≤ x ≤ 5.3%, the band gap energy varies by ∼270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on α-Ga2O3.

TiO2 Nanowires as a Wide Bandgap Dirac Material: a numerical study of impurity scattering and Anderson disorder

2014 ◽  
Vol 1659 ◽  
pp. 187-191
Author(s):  
Gabriele Penazzi ◽  
Peter Deák ◽  
Bálint Aradi ◽  
Tim Wehling ◽  
Alessio Gagliardi ◽  
...  
Keyword(s):  
Band Gap ◽  
Numerical Study ◽  
Impurity Scattering ◽  
Wide Band ◽  
Dirac Fermions ◽  
Tio2 Nanowires ◽  
Wide Band Gap ◽  
Substitutional Impurity ◽  
Crucial Difference ◽  
Dirac Materials

ABSTRACTDirac materials are characterized by exceptional mobility, orders of magnitude higher than any semiconductor, due to the massless pseudorelativistic nature of the Dirac fermions. These systems being semimetallic, the lack of a genuine band-gap poses a serious limitation to their possible applications in electronics. We recently demonstrated that thin TiO2 nanowires can exhibit 1D Dirac states similar to metallic carbon nanotubes, with the crucial difference that these states lie inside the conduction band in proximity of a wide band gap. We analyze the robustness of the Dirac states respect to an Anderson disorder model and substitutional impurity and compare to different one dimensional systems. The results suggest that thin anatase TiO2 nanowires can be a promising candidate material for switching devices.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film

scholarly journals Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Thin Film Solar Cells ◽  
Wide Band Gap
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