Leakage currents of large area InP/InGaAs heterostructures

2014 ◽  
Vol 1635 ◽  
pp. 75-81
Author(s):  
Anders Olsson ◽  
Abuduwayiti Aierken ◽  
Jani Oksanen ◽  
Harri Lipsanen ◽  
Jukka Tulkki
Keyword(s):  
Cooling Capacity ◽  
Large Area ◽  
Leakage Currents ◽  
Light Emitting ◽  
Low Leakage ◽  
Optical Cooling ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Current Densities ◽  
Electroluminescent Cooling

ABSTRACTLight-emitting diodes (LEDs) based on the conventional III-V compound semiconductors are known to exhibit internal quantum efficiencies (IQE) that are very close to unity. Ideally, the high IQE is expected to enable electroluminescent cooling with a cooling capacity of several Watts per cm2 of emitter area. One key requirement in enabling such cooling is the ability to fabricate high quality large area LEDs. However, detailed information on the performance of relevant large area devices and their yield is extremely scarce. In this report we present data on the yield and related large area scaling of InP/InGaAs LEDs by using current-voltage measurements performed on LED wafers fabricated at five different facilities. The samples were processed to contain square shaped mesas of sizes 0.25 mm2 and 16 mm2 operating as LEDs. While most of the smaller mesas showed relatively good electrical characteristics and low leakage current densities, some of them also exhibited very large leakage currents. In addition, in some cases the large area devices exhibited large, and even almost linearly behaving leakage currents. Such information on the scaling and unidealities of diodes fabricated using established fabrication technologies is crucial for the development of the optical cooling technologies relying on large area devices.

A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications

2000 ◽  
Vol 622 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Changhe Huang ◽  
James N. Hilfiker
Keyword(s):  
Plasma Source ◽  
Film Structure ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Aln Film ◽  
Capacitance Voltage ◽  
Device Applications ◽  
Current Densities ◽  
Mis Structures

ABSTRACTAlN films with thicknesses from 53 to 79 nm were deposited on 6H-SiC substrates via Plasma Source Molecular Beam Epitaxy (PSMBE). The influence of deposition temperature on the growth mode and film roughness was assessed. The optical constants of the films in the range 0.73-8.75 eV were determined using spectroscopic ellipsometry. Pt/AlN/6H-SiC MIS structures were created and current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at room temperature and at 250°C. Most of the MIS structures showed rectifying I-V characteristics regardless of growth temperature. A 120-nm-thick AlN film was deposited at 500°C. MIS structures created on this film showed a very low leakage current densities of 6×10−8 A/cm2. The dielectric constant of the film was estimated at approximately 9. The relation between film structure and electrical properties of the films is discussed.

Depth Profile Of Point Defects In Ion Implanted n+p and p+n Junctions Formed By 450°C Post-Implantation Annealing And Impact Of Defects On Junction Characteristics

1996 ◽  
Vol 442 ◽  
Author(s):  
Mauricio Massazumi Oka ◽  
Akira Nakada ◽  
Yukio Tamai ◽  
Kei Kanemoto ◽  
Tadashi Shibata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Substrate Type ◽  
Leakage Currents ◽  
Defect Clusters ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Point Defect Clusters ◽  
Ion Species ◽  
Post Implantation

AbstractIt is shown that defects generated by ion implantation, remaining after annealing at low temperature, are deep-distributed in the bulk silicon and their amount is demonstrated to be function of the substrate type and the implanted ion species. The confirmation that defects penetrate deeply into the silicon is made by a new method that consists in damaging by ion implantation a previously formed pn junction that shows very low leakage current and has a deep junction. It is proposed that the dopants in the substrate act as nucleation centers for the formation of point defect clusters and that these clusters actually degrade the junction. It was found that point defects penetrate much more deeply in p+n junctions than in n+p junctions. It was also found that BF2+ introduces much more defects into the silicon than As+, owing to the presence of fluorine. The leakage currents at 5 V of n+p and p+n diodes made by implantation of P+ and B+, respectively, could be lowered by one to two orders of magnitude with respect to values obtained by implantation of As+ and BF2+ because the former ones produce less defects than the latter.

3kV 4H-SiC Thyristors for Pulsed Power Applications

2010 ◽  
Vol 645-648 ◽  
pp. 1053-1056 ◽  
Author(s):  
Ahmed Elasser ◽  
Peter A. Losee ◽  
Steve Arthur ◽  
Zachary Stum ◽  
Kevin Matocha ◽  
...  
Keyword(s):  
Voltage Drop ◽  
Wide Bandgap ◽  
Pulsed Power ◽  
Large Area ◽  
Leakage Currents ◽  
Low Leakage ◽  
Forward Voltage Drop ◽  
Order Of Magnitude ◽  
High Pulse ◽  
High Electric Field Strength

Due to the Silicon Carbide (SiC) material’s high electric field strength, wide bandgap, and good thermal conductivity, 4H-SiC thyristors are attractive candidates for pulsed power applications. With a thinner blocking layer almost an order of magnitude smaller than its Silicon (Si) counterpart, these devices promise very fast turn-on capabilities as full conductivity modulation occurs >10 times faster than comparable silicon thyristors, low leakage currents at high junction temperatures and at high voltage, and much lower forward voltage drop at high pulse currents. Our progress on the development of large area (4mm x 4mm) SiC thyristors is presented in this paper.

scholarly journals Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

2017 ◽  
Vol 897 ◽  
pp. 63-66
Author(s):  
Selsabil Sejil ◽  
Loic Lalouat ◽  
Mihai Lazar ◽  
Davy Carole ◽  
Christian Brylinski ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Low Leakage ◽  
Forward Current ◽  
Low Leakage Current ◽  
Current Densities ◽  
P Type ◽  
Electrical Characterizations ◽  
Very High

This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p+ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p++ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×1020 at.cm-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electrical measurements show a bipolar behaviour, and very high sustainable forward current densities ≥ 3 kA.cm-2, preserving a low leakage current density in reverse bias. These measurements were obtained on structures without any passivation and no edge termination.

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

2012 ◽  
Vol 717-720 ◽  
pp. 1163-1166 ◽  
Author(s):  
Lei Lin ◽  
Jian Hui Zhao
Keyword(s):  
High Current Density ◽  
High Current ◽  
Initial Pulse ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pulse Testing ◽  
Blocking Voltage ◽  
Fabrication And Characterization

In this paper, we report a 0.1cm2 4H-SiC gate-turn-off (GTO) thyristor with 6 kV blocking voltage fabricated on a structure with a 60µm blocking layer. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-states, and a low leakage current with 63% devices blocking 3kV or higher. Initial pulse testing result shows that the fabricated GTOs are capable of both high current density and high turn-off speed.

Low-voltage field emission from tungsten fiber arrays in a stabilized zirconia matrix

1987 ◽  
Vol 2 (3) ◽  
pp. 322-328 ◽  
Author(s):  
J. K. Cochran ◽  
A. T. Chapman ◽  
D. N. Hill ◽  
K. J. Lee
Keyword(s):  
Low Voltage ◽  
Circular Cylinders ◽  
High Resistivity ◽  
Stabilized Zirconia ◽  
Fiber Arrays ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Emission Testing ◽  
Current Densities ◽  
Field Emitter Array

Field emitter array cathodes were fabricated from unidirectionally solidified composites of tungsten fibers in an insulating yttria-stabilized-zirconia (YSZ) matrix. A close-spaced molybdenum gate film (extractor) was formed utilizing c-beam evaporation of alumina as an insulator, which was overlayed by the molybdenum extractor. The high resistivity of the composite matrix coupled with the alumina insulator resulted in low leakage current and permitted dc operation of the device. Emission testing demonstrated current densities of 1–5 A/cm2 with leakage in the μA range for applied potentials of 125–200 V. Variation of emitter tip geometries from hemispheres to right circular cylinders to pointed cones produced increases in emission consistent with reduced tip radii.

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

2011 ◽  
Vol 679-680 ◽  
pp. 694-697 ◽  
Author(s):  
Fujiwara Hirokazu ◽  
Masaki Konishi ◽  
T. Ohnishi ◽  
T. Nakamura ◽  
Kimimori Hamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Leakage Current ◽  
Surface Defects ◽  
High Yield ◽  
Threading Dislocation ◽  
Electrical Characteristics ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Threading Dislocation Density

The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.

scholarly journals Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

2019 ◽  
Vol 10 ◽  
pp. 1177-1187 ◽  
Author(s):  
David van Treeck ◽  
Johannes Ledig ◽  
Gregor Scholz ◽  
Jonas Lähnemann ◽  
Mattia Musolino ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Detection System ◽  
Accurate Determination ◽  
Analysis Tool ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Densities ◽  
Gan Nanowire ◽  
Measurement Approach

We present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I–V characteristics are described well by a modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single-NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single-NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows for a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool.

Temperature and Doping Dependency of Piezoresistivity in p-type Silicon

2000 ◽  
Vol 657 ◽  
Author(s):  
Eivind Lund ◽  
Terje G. Finstad
Keyword(s):  
Leakage Current ◽  
Negative Temperature ◽  
Leakage Currents ◽  
Micro Electro Mechanical Systems ◽  
Type Silicon ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Wafer Thickness ◽  
P Type ◽  
Doping Profiles

ABSTRACTWe have performed new measurements of the temperature and doping dependency of the piezoresistive effect in p-type silicon. Piezoresistivity is one of the most common sensing principles of micro-electro-mechanical-systems (MEMS). Our measurements are performed in a specially designed setup based on the well-known 4 point bending technique. The samples are beams of full wafer thickness. To minimize leakage currents and to obtain uniform doping profiles, we have used SIMOX (Separation by IMplantation of OXygen) substrates with resistors defined in an epitaxial layer. Spreading resistance measurements show that the doping profiles are uniform with depth, while measurements of leakage current versus temperature indicate low leakage current. In this paper we present results for the doping concentration range from 1×1017 – 1×1020 cm−3 and the temperature range from –30 to 150 degrees Celsius. The results show a doping dependency of piezoresistivity well described by the current models. The measurements of the temperature dependency of the coefficients of piezoresistivity are compared to a linear model with a negative temperature coefficient whose absolute value decreases with increasing doping.

Transparent Transistors Based on Semiconducting Oxides

2003 ◽  
Vol 786 ◽  
Author(s):  
Y.W. Kwon ◽  
Y. Li ◽  
Y.W. Heo ◽  
M. Jones ◽  
Vijay ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Field Effect Transistors ◽  
Dielectric Strength ◽  
Charge Densities ◽  
Low Leakage ◽  
Active Layers ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Conductance

ABSTRACTThe synthesis and properties of oxide-based thin film transistors (TFTs) is reported using pulsed laser deposition. The field effect transistors use ZnO as the channel material. Low leakage current density is achieved with amorphous (CeTb)MgAl11O19 (CTMA) serving as the gate oxide, whose dielectric strength is measured to be > 5MV/cm for structures fabricated on Indium Tin oxide (ITO) substrates. Capacitance-voltage properties show that n-type active layers are realized with undoped ZnO. Charge densities in undoped ZnO are measured to be 1018 to 1019 / cm3 using Hall measurement and CV plots. Current-voltage measurements for TFT operation are reported. Channel materials on patterned substrates show high conductance and modulation of channel conductance. C-V measurements with MOS structure using doped ZnO and ZnxMg1-xO will also be described. The properties of depletion mode TFTs fabricated with doped and undoped oxide channel will be discussed in detail.

Sign in / Sign up

Export Citation Format

Share Document