Optical Fabrication of Semiconductor Single-Crystalline Microspheres in Superfluid Helium

2014 ◽  
Vol 1635 ◽  
pp. 103-108 ◽  
Author(s):  
Shinya Okamoto ◽  
Satoshi Ichikawa ◽  
Yosuke Minowa ◽  
Masaaki Ashida
Keyword(s):  
Superfluid Helium ◽  
Luminescence Spectra ◽  
Ultraviolet Region ◽  
Optical Fabrication ◽  
Strong Light ◽  
Time Resolved ◽  
Light Matter Interaction ◽  
Time Resolved Photoluminescence ◽  
Spherical Microparticles ◽  
Typical Mode

ABSTRACTWe successfully fabricated semiconductor microspheres of ZnO, ZnSe, etc., by laser ablation in superfluid helium and investigated their morphology and optical properties. Time-resolved photoluminescence spectroscopy in ultraviolet region of single ZnO microspheres shows luminescence spectra with mode structures and remarkable reduction of the luminescence decay time compared to that of polycrystals or non-spherical microparticles. This indicates strong light-matter interaction due to efficient light-confinement in the ZnO microspheres. In addition, the fabricated ZnSe microspheres also show the photoluminescence spectra with typical mode structures indicating their high sphericity.

scholarly journals Defect Characterization in ZnGeP2 by Time -Resolved Photoluminescence

1996 ◽  
Vol 450 ◽  
Author(s):  
N. Dietz ◽  
W. Busse ◽  
H. E. Gumlich ◽  
W. Ruderman ◽  
I. Tsveybak ◽  
...  
Keyword(s):  
Energy Range ◽  
Infrared Emission ◽  
Luminescence Spectra ◽  
Broad Emission Band ◽  
Wide Energy Range ◽  
Time Resolved ◽  
Broad Emission ◽  
Donor Acceptor ◽  
Donor States ◽  
Time Resolved Photoluminescence

AbstractSteady state and time-resolved photoluminescence (PL) investigations on ZnGeP2 crystals grown from the vapor phase by high pressure physical vapor transport (HPVT) and from the melt by gradient freezing (GF) are reported. The luminescence spectra reveal a broad infrared emission with peak position at 1.2 eV that exhibits features of classical donor-acceptor recombination. The hyperbolic decay characteristic over a wide energy range, investigated from 1.2 eV up to 1.5eV, suggest that this broad emission band is related to one energetic recombination center. Higher energetic luminescence structures at 1.6eV and 1.7eV were revealed after annealing of ZnGeP2 crystals in vacuum for a longer period of time. The emission decay behavior in this energy range is characterized by two hyperbolic time constants, viewed as the supercomposition of the decay from the broad emission center peaked at 1.2eV and additional donor-acceptor recombination emissions at 1.6eV and 1.7eV, respectively. ZnGeP2 crystals grown under Ge-deficient conditions by HPVT show an additional emission structure at 1.8 eV with sharp emission fine structures at 1.778 eV related to the presence of additional donor states.

Titanium Related Luminescence in SiC

2008 ◽  
Vol 600-603 ◽  
pp. 461-464 ◽  
Author(s):  
Anne Henry ◽  
Peder Bergman ◽  
Erik Janzén
Keyword(s):  
Low Temperature ◽  
Excitation Energy ◽  
High Energy ◽  
Luminescence Spectra ◽  
Time Resolved ◽  
Phonon Line ◽  
Long Lifetime ◽  
Time Resolved Photoluminescence ◽  
Phonon Structure

We report on the luminescence spectra related to Ti impurity in both 4H- and 6H-SiC polytypes. The spectrum depends strongly on the polarization. They are two families of lines in 4H and three in 6H. The main no-phonon line of each family is shown as a triplet and its phonon structure contains both sharp and broad replicas. The higher energy family has also extra lines at high energy appearing when the temperature increases. The spectra can be detected with excitation energy below the excitonic bandgap and even with excitation energy below the spectrum itself. Time-resolved photoluminescence reveals 0.1 ms long lifetime at low temperature.

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Compositional Analysis ◽  
Optical Emission ◽  
Rf Plasma ◽  
Light Emitters ◽  
Time Resolved ◽  
Light Emitting ◽  
Spatially Resolved ◽  
Time Resolved Photoluminescence ◽  
Made In

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

scholarly journals Highly fluorescent CsPbBr3/TiO2 core/shell perovskite nanocrystals with excellent stability

2021 ◽  
Vol 3 (6) ◽  
Author(s):  
Haitao Chen ◽  
Renhua Li ◽  
Anqi Guo ◽  
Yu Xia
Keyword(s):  
Identical Particle ◽  
Core Shell ◽  
List Type ◽  
Easy Method ◽  
Time Resolved ◽  
Perovskite Nanocrystals ◽  
Promising Application ◽  
The Stability ◽  
Time Resolved Photoluminescence ◽  
Excellent Stability

AbstractThe poor stability of CsPbX3 (X = Cl, Br, I) perovskite nanocrystals is the most impediment to its application in the field of photoelectrics. In this work, monodisperse CsPbBr3/TiO2 nanocrystals are successfully prepared by coating titanium precursor on the surface of colloidal CsPbBr3 nanocrystals at room temperature. The CsPbBr3/TiO2 nanocomposites exhibit excellent stability, remaining the identical particle size (9.2 nm), crystal structures and optical properties. Time-resolved photoluminescence decay shows that the lifetime of CsPbBr3/TiO2 nanocrystals is about 4.04 ns and keeps great stability after lasting two months in the air. Results show that the coating of TiO2 on CsPbBr3 NCs greatly suppressed the anion exchange and photodegradation, which are the main reasons for dramatically improving their chemical stability and photostability. The results provide an effective method to solve the stability problem of perovskite nanostructures and are expected to have a promising application in optoelectronic fieldsArticle highlights 1. Prepared the all-inorganic CsPbBr3/TiO2 core/shell perovskite nanocrystals by an easy method. 2. Explored its essences of PL and lifetime of the synthesized CsPbBr3/TiO2 perovskite nanocrystals. 3. CsPbBr3/TiO2 nanocrystals show the great thermal stability after the post-annealing. 4. The CsPbBr3/TiO2 nanocrystals have a high PLQY and have a promising application in solar cells.

scholarly journals Optical switching of topological phase in a perovskite polariton lattice

2021 ◽  
Vol 7 (21) ◽  
pp. eabf8049
Author(s):  
Rui Su ◽  
Sanjib Ghosh ◽  
Timothy C. H. Liew ◽  
Qihua Xiong
Keyword(s):  
Optical Switching ◽  
Room Temperature ◽  
Optical Pumping ◽  
Optical Nonlinearity ◽  
Edge States ◽  
Ambient Conditions ◽  
Strong Light ◽  
Exciton Polaritons ◽  
Matter Interaction ◽  
Light Matter Interaction

Strong light-matter interaction enriches topological photonics by dressing light with matter, which provides the possibility to realize active nonlinear topological devices with immunity to defects. Topological exciton polaritons—half-light, half-matter quasiparticles with giant optical nonlinearity—represent a unique platform for active topological photonics. Previous demonstrations of exciton polariton topological insulators demand cryogenic temperatures, and their topological properties are usually fixed. Here, we experimentally demonstrate a room temperature exciton polariton topological insulator in a perovskite zigzag lattice. Polarization serves as a degree of freedom to switch between distinct topological phases, and the topologically nontrivial polariton edge states persist in the presence of onsite energy perturbations, showing strong immunity to disorder. We further demonstrate exciton polariton condensation into the topological edge states under optical pumping. These results provide an ideal platform for realizing active topological polaritonic devices working at ambient conditions, which can find important applications in topological lasers, optical modulation, and switching.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

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